公开(公告)号：US20230061151A1

公开(公告)日：2023-03-02

申请号：US17820929

申请日：2022-08-19

Applicant: Tokyo Electron Limited

Inventor： Hideki YUASA ,  Hiroyuki IKUTA ,  Yutaka FUJINO ,  Makoto WADA ,  Hirokazu UEDA

IPC: C23C16/56 ,  C23C16/34

Abstract: A film forming method of forming a film on a substrate by using a film forming apparatus including a processing container, and a stage provided in an interior of the processing container to place the substrate thereon and in which aluminum is contained, includes: forming a film continuously on one substrate or on a plurality of substrates by supplying a gas for film formation to the interior of the processing container while heating the substrate placed on the stage; cleaning the interior of the processing container with a fluorine-containing gas in a state in which the substrate is unloaded from the processing container; and performing a post-process by generating plasma of an oxygen- and hydrogen-containing-gas in the interior of the processing container, wherein the forming the film, the cleaning the interior of the processing container, and the performing the post-process are repeatedly performed.

公开(公告)号：US20220223378A1

公开(公告)日：2022-07-14

申请号：US17277188

申请日：2019-07-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki IKUTA ,  Hirokazu UEDA ,  Yutaka FUJINO

IPC: H01J37/32

Abstract: This plasma processing method comprises: arranging a substrate in a region away from a microwave plasma generation region in a chamber; setting the pressure in the chamber to 1 Torr or higher; introducing microwaves from a microwave plasma source in the chamber, generating microwave plasma by introducing a processing gas containing a reducing gas, and diffusing active species from the microwave plasma in the microwave plasma generation region to the substrate side; and applying high-frequency power to the substrate to generate cathode-coupled plasma near the substrate and attract ions near the substrate to the substrate.

公开(公告)号：US20230220545A1

公开(公告)日：2023-07-13

申请号：US17916159

申请日：2021-03-29

Applicant: Tokyo Electron Limited

Inventor： Yoshiyuki KONDO ,  Yutaka FUJINO ,  Hiroyuki IKUTA ,  Hideki YUASA

IPC: C23C16/44 ,  H01L21/3065 ,  H01J37/32

CPC classification number: C23C16/4405 ,  H01L21/3065 ,  H01J37/32862 ,  H01J37/3244

Abstract: The cleaning method according to an embodiment of the present invention is for cleaning a plasma processing apparatus that performs a plasma processing on a substrate. This cleaning method includes: forming a protective film; and cleaning. The forming the protective film involves forming the protective film in a plasma generation region by generating plasma while supplying a film-forming gas into a processing container in which a processing space including the plasma generation region and a diffusion region is formed. The cleaning involves cleaning an interior of the processing container in which the protective film has been formed by generating plasma while supplying a cleaning gas into the processing container.

公开(公告)号：US20230062105A1

公开(公告)日：2023-03-02

申请号：US17820962

申请日：2022-08-19

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Yutaka FUJINO ,  Hiroyuki IKUTA ,  Hideki YUASA ,  Hirokazu UEDA

IPC: C23C16/44 ,  C23C16/511 ,  C23C16/34 ,  H01J37/32

Abstract: A film forming method includes repeatedly performing: forming a film on one substrate or consecutively on a plurality of substrates by supplying a film formation gas into a processing container while heating the substrate on a stage; cleaning an interior of the processing container by a fluorine-containing gas by setting a temperature of the stage to a first temperature at which a vapor pressure of an aluminum fluoride becomes lower than a control pressure in the processing container in a state in which the substrate is unloaded from the processing container; and performing a precoating continuously to the cleaning the interior of the processing container such that a precoat film is formed on at least a surface of the stage by setting the temperature of the stage to a second temperature at which the vapor pressure of the aluminum fluoride becomes lower than the control pressure in the processing container.

公开(公告)号：US20220235462A1

公开(公告)日：2022-07-28

申请号：US17577656

申请日：2022-01-18

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Hideki YUASA ,  Yutaka FUJINO ,  Yoshiyuki KONDO ,  Hiroyuki IKUTA

IPC: C23C16/455 ,  H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/511

Abstract: A film forming method includes: placing a substrate on which a pattern, which includes a plurality of convex and concave portions, is formed on a stage disposed inside a chamber; and selectively forming a silicon-containing film on the plurality of convex portions of the pattern by applying a bias power to the stage and introducing microwaves into the chamber while supplying a processing gas containing a silicon-containing gas and a nitrogen-containing gas into the chamber to generate plasma, wherein the selectively forming the silicon-containing film includes a first film formation of forming a silicon-containing film around upper sides of the plurality of convex portions and a second film formation of forming a silicon-containing film on upper portions of the plurality of convex portions.

公开(公告)号：US20220037124A1

公开(公告)日：2022-02-03

申请号：US17388613

申请日：2021-07-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi ITOH ,  Hiroyuki IKUTA ,  Yoshiyuki KONDO ,  Hideki YUASA ,  Soudai EMORI

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/511 ,  C23C16/509

Abstract: A plasma processing apparatus for generating plasma from a processing gas using microwaves and performing plasma processing on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed; a plurality of microwave radiation units arranged at a central portion and an outer peripheral portion of a ceiling wall of the processing chamber and configured to radiate microwaves; and a controller configured to complete microwave radiation from the microwave radiation unit in the central portion upon completion of plasma processing of the substrate and then complete microwave radiation from the microwave radiation units in the outer peripheral portion.

公开(公告)号：US20210090888A1

公开(公告)日：2021-03-25

申请号：US17041767

申请日：2019-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirokazu UEDA ,  Jinwang LI ,  Masahiro OKA ,  Yoshimasa WATANABE ,  Yuuki YAMAMOTO ,  Hiroyuki IKUTA

IPC: H01L21/033 ,  H01L21/02 ,  C23C16/02 ,  C23C16/50 ,  C23C16/455 ,  C23C16/28

Abstract: A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.

公开(公告)号：US20170133204A1

公开(公告)日：2017-05-11

申请号：US15345106

申请日：2016-11-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA ,  Toyohiro KAMADA ,  Hiroyuki IKUTA ,  Yuya MINOURA

IPC: H01J37/32 ,  C23C16/50

Abstract: There is provided a member for a plasma processing apparatus, the member constituting the plasma processing apparatus configured to generate plasma in a processing space of a processing container and to perform plasma processing on an object to be processed. The member includes a face of the member exposed to the plasma and coated with a protection film. The protection film includes a columnar structure having a plurality of column-shaped portions in substantially cylindrical shapes extending in a thickness direction of the film. The plurality of column-shaped portions is adjacent to one another without gaps therebetween.