公开(公告)号：US20200048764A1

公开(公告)日：2020-02-13

申请号：US16530259

申请日：2019-08-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirotaka KUWADA ,  Yuki KEIMOTO ,  Yu NUNOSHIGE ,  Yasushi FUJII

IPC: C23C16/458 ,  C23C16/52 ,  H01L21/02 ,  H01L21/687

Abstract: A film forming apparatus, which forms a film on a substrate mounted on a stage in a process chamber by supplying a film forming gas to the substrate from a film forming gas supply facing the stage, includes: a first annular body surrounding the stage with a gap interposed between the stage and the first annular body; a second annular body extending downward from an inner peripheral portion of the first annular body; and a third annular body extending from a peripheral portion of the stage such that the third annular body has a flow path defining surface extending along an inner peripheral surface of the second annular body and a lower end surface of the second annular body.

公开(公告)号：US20200048765A1

公开(公告)日：2020-02-13

申请号：US16530160

申请日：2019-08-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirotaka KUWADA ,  Takashi KAMIO ,  Yu NUNOSHIGE ,  Yasushi FUJII

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/34

Abstract: There is provided a gas processing apparatus, including: a vacuum vessel; a mounting part installed in the vacuum vessel and configured to mount a substrate; an opposing part configured to face the mounting part and including first gas discharge ports configured to discharge a processing gas to the substrate; a first diffusion space configured to communicate with the first gas discharge ports; second gas discharge ports formed in a ceiling portion and configured to supply the processing gas to a central portion of the first diffusion space; a second diffusion space configured to communicate with the second gas discharge ports; a gas supply path installed at an upstream side of the second diffusion space and configured to supply the processing gas to the second diffusion space; and third gas discharge ports configured to be opened to an outer portion of the ceiling portion in an oblique direction.

公开(公告)号：US20200071831A1

公开(公告)日：2020-03-05

申请号：US16557285

申请日：2019-08-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirotaka KUWADA ,  Yu NUNOSHIGE ,  Yasushi FUJI

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/44 ,  C23C16/458

Abstract: An apparatus includes: a vacuum container having a vacuum atmosphere for a film forming process on each substrate; a stage for heating the substrate mounted thereon; a shower head including a facing portion that faces the stage and ejection ports opened in the facing portion, which supplies a film-forming gas to the substrate through the ports so as to form a film on the substrate; a cleaning gas supply part for supplying a cleaning gas into the container to clean the interior of the container in a state where no substrate is accommodated in the container while the film forming process is applied on the each of the plurality of substrates; and a non-porous coating film for covering a base material constituting the shower head at least in the facing portion to form a surface of the shower head when the film-forming gas is supplied to each substrate.

公开(公告)号：US20180112312A1

公开(公告)日：2018-04-26

申请号：US15784617

申请日：2017-10-16

Applicant: Tokyo Electron Limited

Inventor： Masaya ODAGIRI ,  Hirotaka KUWADA ,  Hiroki EHARA ,  Yukihiro TAMEGAI ,  Tsuyoshi TAKAHASHI ,  Hideo NAKAMURA ,  Kazuyoshi YAMAZAKI ,  Yoshikazu IDENO

IPC: C23C16/455 ,  C23C16/30

CPC classification number: C23C16/45548 ,  C23C16/303 ,  C23C16/34 ,  C23C16/448 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/45574

Abstract: Disclosed is a film forming apparatus that forms a TiN film on a wafer by an ALD method. The film forming apparatus includes a chamber configured to accommodate the wafer, a gas supply mechanism configured to supply a titanium raw material gas including a TiCl4 gas, a nitriding gas including a NH3 gas, and a purge gas into the chamber, an exhaust mechanism configured to evacuate the inside of the chamber, and a controller configured to control the gas supply mechanism such that the TiCl4 gas and the NH3 gas are alternately supplied into the wafer. The gas supply mechanism has an NH3 gas heating unit configured to heat the NH3 gas to change a state of the NH3 gas and supplies the NH3 gas, the state of which is changed by the NH3 gas heating unit, into the chamber.