公开(公告)号：US20180112312A1

公开(公告)日：2018-04-26

申请号：US15784617

申请日：2017-10-16

Applicant: Tokyo Electron Limited

Inventor： Masaya ODAGIRI ,  Hirotaka KUWADA ,  Hiroki EHARA ,  Yukihiro TAMEGAI ,  Tsuyoshi TAKAHASHI ,  Hideo NAKAMURA ,  Kazuyoshi YAMAZAKI ,  Yoshikazu IDENO

IPC: C23C16/455 ,  C23C16/30

CPC classification number: C23C16/45548 ,  C23C16/303 ,  C23C16/34 ,  C23C16/448 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/45574

Abstract: Disclosed is a film forming apparatus that forms a TiN film on a wafer by an ALD method. The film forming apparatus includes a chamber configured to accommodate the wafer, a gas supply mechanism configured to supply a titanium raw material gas including a TiCl4 gas, a nitriding gas including a NH3 gas, and a purge gas into the chamber, an exhaust mechanism configured to evacuate the inside of the chamber, and a controller configured to control the gas supply mechanism such that the TiCl4 gas and the NH3 gas are alternately supplied into the wafer. The gas supply mechanism has an NH3 gas heating unit configured to heat the NH3 gas to change a state of the NH3 gas and supplies the NH3 gas, the state of which is changed by the NH3 gas heating unit, into the chamber.

公开(公告)号：US20200294799A1

公开(公告)日：2020-09-17

申请号：US16818491

申请日：2020-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tetsuya SAITOU ,  Takashi KAMIO ,  Kazuyoshi YAMAZAKI ,  Naoshige FUSHIMI

IPC: H01L21/02 ,  H01L21/67

Abstract: An apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; a gas supply mechanism for supplying a processing gas into the processing container; and at least three ultraviolet light sources provided to irradiate the processing gas inside the processing container with ultraviolet rays. The ultraviolet light sources are provided to be offset from a rotation axis of the stage in a plan view, and are arranged in a light source arrangement direction with distances from the ultraviolet light sources to the rotation axis being different from one another. The ultraviolet light sources include first to third ultraviolet light source. The third ultraviolet light source is arranged such that distances L1, L2, and L3 from the first to third ultraviolet light sources, respectively, to the rotation axis in a plan view satisfies a relationship of L1

公开(公告)号：US20200056287A1

公开(公告)日：2020-02-20

申请号：US16538086

申请日：2019-08-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tsuyoshi TAKAHASHI ,  Kazuyoshi YAMAZAKI ,  Hideo NAKAMURA ,  Yoshikazu IDENO

IPC: C23C16/455 ,  C23C16/34

Abstract: A film-forming method for forming a metal nitride film on a substrate includes: forming the metal nitride film on the substrate by repeating a cycle a predetermined number of times, the cycle including: a first process of supplying a metal-containing gas into a process container configured to accommodate the substrate therein; a second process of supplying a purge gas into the process container; a third process of supplying a nitrogen-containing gas into the process container; and a fourth process of supplying the purge gas into the process container, wherein the fourth process includes: a first step of supplying a first purge gas having a first flow rate equal to or larger than a flow rate of the metal-containing gas of the first process; and a second step of supplying the first purge gas having a second flow rate smaller than the first flow rate.