公开(公告)号：US20200290080A1

公开(公告)日：2020-09-17

申请号：US16768216

申请日：2018-12-07

Applicant: Tokyo Electron Limited

Inventor： Ryouichirou NAITOU ,  Masato HAYASHI ,  Hideo SHITE ,  Hiroyuki IDE ,  Yosuke KAMEDA ,  Seiya TOTSUKA ,  Atsumu MAITA ,  Takami SATOH ,  Hirofumi ARAKI ,  Kentaro YOSHIHARA

IPC: B05C19/06 ,  B05C11/10

Abstract: A solution supply apparatus for supplying a treatment solution to a treatment solution discharger configured to discharge the treatment solution to a treatment object, the solution supply apparatus includes: a supply pipe line connected to the treatment solution discharger; a filter provided on the supply pipe line and configured to filter the treatment solution to remove foreign substances; and a controller configured to perform a determination of a state of the treatment solution to be supplied to a primary side of the filter and, when the state of the treatment solution is determined to be bad, to output a control signal for restricting supply of the treatment solution to the primary side of the filter.

公开(公告)号：US20160167079A1

公开(公告)日：2016-06-16

申请号：US14963802

申请日：2015-12-09

Applicant: Tokyo Electron Limited

Inventor： Takafumi HASIMOTO ,  Shinichi HATAKEYAMA ,  Naoki SHIBATA ,  Kousuke YOSHIHARA ,  Minoru KUBOTA ,  Hiroyuki IDE

IPC: B05C5/00 ,  G05B15/02 ,  H01L21/02 ,  B05C13/02 ,  B05B1/00

CPC classification number: G05B15/02 ,  B05D1/005 ,  B05D3/042 ,  B05D3/0466 ,  B05D3/104 ,  G03F7/162 ,  H01L21/6715

Abstract: There is provided a coating method which can apply a coating solution uniformly onto a substrate surface while reducing the amount of the coating solution supplied. The coating method for applying a coating solution onto a wafer includes the steps of: supplying a solvent for the coating solution onto the wafer to form an annular liquid film of the solvent in a peripheral area of the wafer; supplying the coating solution to the center of the wafer while rotating the wafer at a first rotational speed (time t1-t2); and allowing the coating solution to spread on the wafer by rotating the wafer at a second rotational speed which is higher than the first rotational speed (time t4-t5). The supply of the solvent is continued until just before the coating solution comes into contact with the liquid film of the solvent (time t0-t3).

Abstract translation: 提供了一种涂布方法，其可以在减少涂布溶液的量的同时将涂布溶液均匀地涂布在基材表面上。 将涂布溶液涂布在晶片上的涂布方法包括以下步骤：向晶片供给涂布溶液的溶剂，以在晶片的周边区域形成溶剂的环状液膜; 在第一旋转速度（时间t1-t2）旋转晶片的同时将涂布溶液供应到晶片的中心; 并且通过以高于第一转速（时刻t4-t5）的第二转速旋转晶片，使涂布液在晶片上扩散。 溶剂的供给继续进行，直到涂布液与溶剂的液膜接触（时刻t0-t3）为止。