公开(公告)号：US20240249951A1

公开(公告)日：2024-07-25

申请号：US18418757

申请日：2024-01-22

Applicant: Tokyo Electron Limited

Inventor： Kosuke YOSHIHARA ,  Yuichi TERASHITA ,  Yukinobu OTSUKA ,  Shinsuke TAKAKI ,  Hiroki TADATOMO ,  Naoki SHIBATA

IPC: H01L21/308 ,  C23C16/04 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/3081 ,  C23C16/042 ,  C23C16/45517 ,  C23C16/46 ,  H01L21/02491 ,  H01L21/3247

Abstract: A substrate treatment method includes: developing a substrate which has a coating film of a metal-containing resist formed thereon and has been subjected to an exposure treatment and a heat treatment after the exposure treatment, the developing including: exposing the substrate to an acid atmosphere being an atmosphere containing gas of a weak acid under a pressure of an atmospheric pressure or higher; and removing a product produced by a reaction between the metal-containing resist and the gas of the weak acid, by heating the substrate.

公开(公告)号：US20180021804A1

公开(公告)日：2018-01-25

申请号：US15549435

申请日：2016-02-04

Applicant: Tokyo Electron Limited

Inventor： Takafumi HASHIMOTO ,  Shinichi HATAKEYAMA ,  Naoki SHIBATA ,  Kousuke YOSHIHARA

IPC: B05D1/00 ,  B05D3/10 ,  H01L21/027 ,  H01L21/67

CPC classification number: B05D1/005 ,  B05C11/08 ,  B05D3/104 ,  G03F7/091 ,  G03F7/162 ,  G03F7/2028 ,  H01L21/027 ,  H01L21/6715 ,  H01L21/67253

Abstract: A coating treatment method of applying a coating solution onto a substrate, includes: a solvent liquid film formation step of forming a first liquid film of a solvent at a middle portion of the substrate and forming a ring-shaped second liquid film having a film thickness larger than a film thickness of the first liquid film of the solvent at an outer peripheral portion of the substrate; a coating solution supply step of supplying the coating solution to a center portion of the substrate while rotating the substrate at a first rotation speed; and a coating solution diffusion step of diffusing the coating solution on the substrate by rotating the substrate at a second rotation speed higher than the first rotation speed while supplying the coating solution.

公开(公告)号：US20160209748A1

公开(公告)日：2016-07-21

申请号：US14963831

申请日：2015-12-09

Applicant: Tokyo Electron Limited

Inventor： Takafumi HASIMOTO ,  Shinichi HATAKEYAMA ,  Naoki SHIBATA

IPC: G03F7/16

CPC classification number: G03F7/16

Abstract: There are provided a liquid processing method, a liquid processing apparatus and a recording medium for liquid processing which can enhance the uniformity of the coating state of a processing liquid on a substrate. A coating unit U1 includes a rotary holder 20 for rotating a wafer W, a nozzle 32 for supplying a processing liquid R onto a surface Wa of the wafer W, and a controller 60 for controlling the position of the nozzle 32 with respect to the wafer W. A liquid processing method includes: starting the supply of the processing liquid R to the surface Wa of the wafer W at an eccentric position at a distance from the center CL1 of rotation of the wafer W, and moving the position on the wafer W to which the processing liquid R is supplied toward the center CL1 of rotation of the wafer W while rotating the wafer W at a first rotational speed ω1; and, after the processing liquid supply position has reached the center CL1 of rotation of the wafer W, rotating the wafer W at a second rotational speed ω2 which is higher than the first rotational speed ω1, thereby allowing the processing liquid R to spread toward the periphery of the wafer W.

Abstract translation: 提供液体处理方法，液体处理装置和用于液体处理的记录介质，其可以增强基板上的处理液体的涂布状态的均匀性。 涂布单元U1包括用于旋转晶片W的旋转保持器20，用于将处理液体R提供到晶片W的表面Wa上的喷嘴32和用于控制喷嘴32相对于晶片的位置的控制器60 液体处理方法包括：在与晶片W的旋转中心CL1相距一定距离的偏心位置处开始向晶片W的表面Wa供应处理液体R，并且移动晶片W上的位置 在以第一转速ω1旋转晶片W的同时，向晶片W的旋转中心CL1供给处理液R; 在处理液供给位置到达晶片W的旋转中心CL1之后，以比第一转速ω1高的第二转速ω2转动晶片W，从而使处理液R朝向 晶圆W.

公开(公告)号：US20240355644A1

公开(公告)日：2024-10-24

申请号：US18640443

申请日：2024-04-19

Applicant: Tokyo Electron Limited

Inventor： Shinsuke TAKAKI ,  Hiroki TADATOMO ,  Yoji SAKATA ,  Tomoya ONITSUKA ,  Naoki SHIBATA

IPC: H01L21/67 ,  G03F7/00 ,  G03F7/004 ,  G03F7/30 ,  G03F7/36 ,  G03F7/38 ,  H01L21/677

CPC classification number: H01L21/67017 ,  G03F7/0042 ,  G03F7/30 ,  G03F7/36 ,  G03F7/38 ,  G03F7/70716 ,  G03F7/7075 ,  G03F7/70866 ,  G03F7/70933 ,  G03F7/70991 ,  H01L21/67225 ,  H01L21/67769 ,  H01L21/67778

Abstract: A substrate processing system provided with a plurality of apparatuses to perform a patterning on a plurality of the substrates, wherein a transfer container accommodating the plurality of substrates is transferred to the plurality of apparatuses in a sequential manner. The substrate processing system includes: a first apparatus of the plurality of apparatuses, which is configured to form a metal-containing resist film on each substrate; a second apparatus of the plurality of apparatuses, which is configured to perform a development on the metal-containing resist film after exposure; and an atmosphere regulator having an accommodation space where the substrates, on each of which the metal-containing resist film before being subjected to the development is formed, are accommodated and configured to regulate an atmosphere of the accommodation space so as to regulate a degree of progress of a reaction of the metal-containing resist film on each substrate.

公开(公告)号：US20180361428A1

公开(公告)日：2018-12-20

申请号：US15997788

申请日：2018-06-05

Applicant: Tokyo Electron Limited

Inventor： Kentaro YOSHIHARA ,  Yuichi YOSHIDA ,  Naoki SHIBATA ,  Kousuke YOSHIHARA

IPC: B05D3/10 ,  B05D3/06 ,  B05D1/00 ,  B05C5/00

Abstract: A film forming method for forming a coating film by applying a coating solution onto a substrate having projections and recesses formed on a surface thereof by a predetermined pattern, includes: applying the coating solution onto the surface of the substrate to form a thick film having a depth of projections and recesses on a surface of the film of a predetermined value or less and having a film thickness larger than a target film thickness of the coating film; and removing the surface of the thick film to form the coating film having the target film thickness.

公开(公告)号：US20180312972A1

公开(公告)日：2018-11-01

申请号：US15962463

申请日：2018-04-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koji MAEKAWA ,  Takashi SAMESHIMA ,  Shintaro AOYAMA ,  Mikio SUZUKI ,  Susumu ARIMA ,  Atsushi MATSUMOTO ,  Naoki SHIBATA

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/08 ,  H01L21/285 ,  H01L21/768

Abstract: There is provided a tungsten film forming method which includes: forming a first tungsten film on a substrate; and forming a second tungsten film on the first tungsten film. The forming a first tungsten film includes alternately supplying a first raw material gas containing tungsten and a diborane gas together with a first carrier gas to the substrate. The forming a second tungsten film includes alternately supplying a second raw material gas containing tungsten and a hydrogen gas together with a second carrier gas to the substrate on which the first tungsten film is formed. The first carrier gas is a nitrogen gas. The second carrier gas includes at least one kind of inert gas and has a noble gas at a flow rate of 70% or more with respect to a total flow rate of the second carrier gas.

公开(公告)号：US20160167079A1

公开(公告)日：2016-06-16

申请号：US14963802

申请日：2015-12-09

Applicant: Tokyo Electron Limited

Inventor： Takafumi HASIMOTO ,  Shinichi HATAKEYAMA ,  Naoki SHIBATA ,  Kousuke YOSHIHARA ,  Minoru KUBOTA ,  Hiroyuki IDE

IPC: B05C5/00 ,  G05B15/02 ,  H01L21/02 ,  B05C13/02 ,  B05B1/00

CPC classification number: G05B15/02 ,  B05D1/005 ,  B05D3/042 ,  B05D3/0466 ,  B05D3/104 ,  G03F7/162 ,  H01L21/6715

Abstract: There is provided a coating method which can apply a coating solution uniformly onto a substrate surface while reducing the amount of the coating solution supplied. The coating method for applying a coating solution onto a wafer includes the steps of: supplying a solvent for the coating solution onto the wafer to form an annular liquid film of the solvent in a peripheral area of the wafer; supplying the coating solution to the center of the wafer while rotating the wafer at a first rotational speed (time t1-t2); and allowing the coating solution to spread on the wafer by rotating the wafer at a second rotational speed which is higher than the first rotational speed (time t4-t5). The supply of the solvent is continued until just before the coating solution comes into contact with the liquid film of the solvent (time t0-t3).

Abstract translation: 提供了一种涂布方法，其可以在减少涂布溶液的量的同时将涂布溶液均匀地涂布在基材表面上。 将涂布溶液涂布在晶片上的涂布方法包括以下步骤：向晶片供给涂布溶液的溶剂，以在晶片的周边区域形成溶剂的环状液膜; 在第一旋转速度（时间t1-t2）旋转晶片的同时将涂布溶液供应到晶片的中心; 并且通过以高于第一转速（时刻t4-t5）的第二转速旋转晶片，使涂布液在晶片上扩散。 溶剂的供给继续进行，直到涂布液与溶剂的液膜接触（时刻t0-t3）为止。