公开(公告)号：US20170090291A1

公开(公告)日：2017-03-30

申请号：US15374081

申请日：2016-12-09

Applicant: Tokyo Electron Limited

Inventor： Kousuke YOSHIHARA ,  Hideharu KYOUDA ,  Koshi MUTA ,  Taro YAMAMOTO ,  Yasushi TAKIGUCHI ,  Masahiro FUKUDA

IPC: G03F7/30 ,  B05C11/08 ,  B05C5/02 ,  B05D1/00 ,  B05D1/26

CPC classification number: G03F7/3021 ,  B05C5/02 ,  B05C5/027 ,  B05C11/08 ,  B05D1/005 ,  B05D1/26 ,  G03F7/30 ,  H01L21/6715

Abstract: A developing apparatus including a horizontal substrate holder, a rotating mechanism to rotate the substrate holder, a developer nozzle to supply a developer onto a part of the substrate to form a liquid puddle, a moving mechanism to move the developer nozzle in a radial direction of the rotating substrate, a contact part that moves with the developer nozzle and has a surface opposed to the substrate, which is smaller than the surface of the substrate, and a control unit to output a control signal such that a supply position of the developer on the substrate is moved in the radial direction of the substrate so that the liquid puddle is spread out on a whole surface of the substrate while the contact part is in contact with the liquid puddle.

公开(公告)号：US20150371853A1

公开(公告)日：2015-12-24

申请号：US14813820

申请日：2015-07-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kousuke YOSHIHARA ,  Koji TAKAYANAGI ,  Shinichi HATAKEYAMA ,  Kohei KAWAKAMI

IPC: H01L21/033 ,  H01L21/027

CPC classification number: H01L21/0337 ,  B05C11/023 ,  B05D1/005 ,  G03F7/162 ,  G06F19/00 ,  H01L21/0271 ,  H01L21/6715 ,  H01L51/0003 ,  H01L2224/03418

Abstract: A coating treatment apparatus supplying a coating solution to a front surface of a rotated substrate and diffusing the supplied coating solution to an outer periphery side of the substrate to thereby apply the coating solution on the front surface of the substrate includes: a substrate holding part holding a substrate; a rotation part rotating the substrate held on the substrate holding part; a supply part supplying a coating solution to a front surface of the substrate held on the substrate holding part; and an airflow control plate provided at a predetermined position above the substrate held on the substrate holding part for locally changing an airflow above the substrate rotated by the rotation part at an arbitrary position.

Abstract translation: 一种涂布处理装置，其将涂布溶液供给到旋转的基板的前表面，并将供给的涂布溶液扩散到基板的外周侧，从而将涂布液涂布在基板的前表面上，包括：保持基板 底物; 旋转部，旋转保持在所述基板保持部上的所述基板; 供给部，其向保持在所述基板保持部的所述基板的前表面供给涂布液; 以及气流控制板，其设置在保持在所述基板保持部上的所述基板上方的预定位置，用于在任意位置局部地改变由所述旋转部旋转的所述基板上方的气流。

公开(公告)号：US20150357188A1

公开(公告)日：2015-12-10

申请号：US14764687

申请日：2014-01-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoru SHIMURA ,  Fumiko IWAO ,  Kousuke YOSHIHARA

IPC: H01L21/02 ,  H01L21/66 ,  B05C9/14 ,  B05C11/10 ,  B05C11/08 ,  B05C9/12

CPC classification number: H01L21/02348 ,  B05C9/12 ,  B05C9/14 ,  B05C11/08 ,  B05C11/1015 ,  H01L21/02118 ,  H01L21/0271 ,  H01L21/31055 ,  H01L21/31138 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6715 ,  H01L21/67178 ,  H01L21/6719 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: The present invention is to form an organic film on a substrate having a pattern formed on a front surface thereof and configured to: apply an organic material onto the substrate; then thermally treat the organic material to form an organic film on the substrate; and then perform ultraviolet irradiation processing on the organic film to remove a surface of the organic film down to a predetermined depth, thereby appropriately and efficiently form the organic film on the substrate.

Abstract translation: 本发明是在基板上形成有机膜，该基板具有形成在其表面上的图案，并且构造成：将有机材料施加到基板上; 然后热处理有机材料以在基底上形成有机膜; 然后对有机膜进行紫外线照射处理，将有机膜的表面除去到规定的深度，由此适当且有效地在基板上形成有机膜。

公开(公告)号：US20140352737A1

公开(公告)日：2014-12-04

申请号：US14283331

申请日：2014-05-21

Applicant: Tokyo Electron Limited

Inventor： Atsushi OOKOUCHI ,  Kousuke YOSHIHARA ,  Hiroshi ICHINOMIYA ,  Hirosi NISIHATA ,  Ryouichirou NAITOU

IPC: H01L21/67

CPC classification number: H01L21/67051

Abstract: A cleaning liquid and a gas are discharged in sequence to a central portion of a substrate while the substrate is being rotated, and after nozzles that discharge them are moved to a peripheral edge side of the substrate, discharge of the cleaning liquid is switched to a second cleaning liquid nozzle set at a position deviated from a movement locus of the first cleaning liquid nozzle. Both of the nozzles are moved toward the peripheral edge side of the substrate while discharging the cleaning liquid and discharging the gas so that a difference between a distance from the discharge position of the second cleaning liquid nozzle to the central portion of the substrate and a distance from the discharge position of the gas nozzle to the central portion of the substrate gradually decreases.

Abstract translation: 在基板旋转的同时，将清洗液和气体顺序地排出到基板的中心部分，在将其排出的喷嘴移动到基板的周缘侧后，将清洗液的排出切换为 第二清洗液喷嘴设置在偏离第一清洗液喷嘴的移动轨迹的位置。 两个喷嘴在排出清洁液体并排出气体的同时朝向基板的周缘侧移动，使得从第二清洗液喷嘴的排出位置到基板的中心部分的距离与距离 从气体喷嘴的排出位置到基板的中央部逐渐减小。

公开(公告)号：US20130280425A1

公开(公告)日：2013-10-24

申请号：US13865311

申请日：2013-04-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichi YOSHIDA ,  Kousuke YOSHIHARA

IPC: H01L21/02

CPC classification number: G03F7/70975 ,  G03F7/162 ,  G03F7/3021 ,  G03F7/325 ,  H01L21/02052 ,  H01L21/02104 ,  H01L21/67017 ,  H01L21/67051 ,  H01L21/6715

Abstract: A liquid treatment method includes: supplying a first organic solvent to a substrate with the substrate being held horizontally by a substrate holder; and thereafter supplying a second organic solvent to a substrate held by the substrate holder, the second solvent having a higher cleanliness than the first solvent.

Abstract translation: 液体处理方法包括：将基板由基板保持器水平保持的基板供给第一有机溶剂; 然后将第二有机溶剂供给到由所述基板保持件保持的基板上，所述第二溶剂具有比所述第一溶剂更高的清洁度。

公开(公告)号：US20200064742A1

公开(公告)日：2020-02-27

申请号：US16466864

申请日：2017-12-15

Applicant: Tokyo Electron Limited

Inventor： Akiko KAI ,  Kousuke YOSHIHARA ,  Kouichirou TANAKA ,  Hiroshi ICHINOMIYA

IPC: G03F7/32 ,  H01L21/67 ,  H01L21/687

Abstract: A developing treatment method for performing a developing treatment on a resist film on a substrate, includes: a pattern forming step of forming a resist pattern by supplying a developing solution to the substrate and developing the resist film on the substrate; a coating step of coating the developed substrate with an aqueous solution of a water-soluble polymer; and a rinse step of cleaning the substrate by supplying a rinse solution to the substrate coated with the aqueous solution of the water-soluble polymer.

公开(公告)号：US20180021804A1

公开(公告)日：2018-01-25

申请号：US15549435

申请日：2016-02-04

Applicant: Tokyo Electron Limited

Inventor： Takafumi HASHIMOTO ,  Shinichi HATAKEYAMA ,  Naoki SHIBATA ,  Kousuke YOSHIHARA

IPC: B05D1/00 ,  B05D3/10 ,  H01L21/027 ,  H01L21/67

CPC classification number: B05D1/005 ,  B05C11/08 ,  B05D3/104 ,  G03F7/091 ,  G03F7/162 ,  G03F7/2028 ,  H01L21/027 ,  H01L21/6715 ,  H01L21/67253

Abstract: A coating treatment method of applying a coating solution onto a substrate, includes: a solvent liquid film formation step of forming a first liquid film of a solvent at a middle portion of the substrate and forming a ring-shaped second liquid film having a film thickness larger than a film thickness of the first liquid film of the solvent at an outer peripheral portion of the substrate; a coating solution supply step of supplying the coating solution to a center portion of the substrate while rotating the substrate at a first rotation speed; and a coating solution diffusion step of diffusing the coating solution on the substrate by rotating the substrate at a second rotation speed higher than the first rotation speed while supplying the coating solution.

公开(公告)号：US20170031245A1

公开(公告)日：2017-02-02

申请号：US15106915

申请日：2014-12-15

Applicant: Tokyo Electron Limited ,  Osaka University

Inventor： Seiji NAGAHARA ,  Gousuke SHIRAISHI ,  Satoru SHIMURA ,  Kousuke YOSHIHARA ,  Shinichiro KAWAKAMI ,  Masaru TOMONO ,  Seiichi TAGAWA ,  Akihiro OSHIMA

IPC: G03F7/20 ,  H01L21/67

CPC classification number: G03F7/2004 ,  G03F7/20 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/67196 ,  H01L21/67225

Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Abstract translation: 一种用于处理基板的基板处理系统，包括：设置有多个处理基板的处理装置的处理台; 接口站，其在设置在基板处理系统之外的曝光装置之间直接或间接地传送基板，并且在基板上的抗蚀剂膜上进行图案的曝光;以及基板处理系统; 执行曝光图案之后，使用UV光对基板上的抗蚀剂膜进行后曝光的光照射装置; 以及容纳光照射装置并且可以减压或惰性气体气氛调节的后曝光站，其中后曝光站通过可调节到减压的空间直接或间接连接到曝光装置，或 惰性气体气氛。

公开(公告)号：US20150036109A1

公开(公告)日：2015-02-05

申请号：US14449419

申请日：2014-08-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kousuke YOSHIHARA ,  Hideharu KYOUDA ,  Koshi MUTA ,  Taro YAMAMOTO ,  Yasushi TAKIGUCHI ,  Masahiro FUKUDA

IPC: G03F7/30

CPC classification number: G03F7/3021 ,  B05C5/02 ,  B05C5/027 ,  B05C11/08 ,  B05D1/005 ,  B05D1/26 ,  G03F7/30 ,  H01L21/6715

Abstract: A developing method includes: horizontally holding an exposed substrate by a substrate holder; forming a liquid puddle on a part of the substrate, by supplying a developer from a developer nozzle; rotating the substrate; spreading the liquid puddle on a whole surface of the substrate, by moving the developer nozzle such that a supply position of the developer on the rotating substrate is moved in a radial direction of the substrate; bringing, simultaneously with the spreading of the liquid puddle on the whole surface of the substrate, a contact part into contact with the liquid puddle, the contact part being configured to be moved together with the developer nozzle and having a surface opposed to the substrate which is smaller than the surface of the substrate. According to this method, an amount of liquid falling down to the outside of the substrate can be inhibited. In addition, since the rotating speed of the substrate can be decreased, spattering of the developer can be inhibited. Further, a throughput can be improved by stirring the developer.

Abstract translation: 显影方法包括：通过基板保持器水平保持曝光的基板; 通过从显影剂喷嘴提供显影剂，在基底的一部分上形成液体熔池; 旋转基板; 通过使显影剂喷嘴移动使得旋转基板上的显影剂的供给位置沿基板的径向方向移动，将液体熔池分散在基板的整个表面上; 使液体熔池在基板的整个表面上的扩展同时与接触部分与液体熔池接触，接触部分被构造成与显影剂喷嘴一起移动并且具有与基板相对的表面， 小于衬底的表面。 根据该方法，能够抑制向基板外侧落下的液体的量。 此外，由于可以降低基板的旋转速度，可以抑制显影剂的飞溅。 此外，可以通过搅拌显影剂来提高生产量。

公开(公告)号：US20140030423A1

公开(公告)日：2014-01-30

申请号：US13949733

申请日：2013-07-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Minoru KUBOTA ,  Kousuke YOSHIHARA ,  Kouzou TACHIBANA

IPC: G03F7/16

CPC classification number: G03F7/16 ,  B05C5/0258 ,  B05C11/08 ,  B05C11/1002 ,  B08B3/08 ,  B08B3/10 ,  G03F7/162 ,  H01L21/67051 ,  H01L21/6715 ,  H01L21/67178

Abstract: A liquid processing apparatus includes a substrate holding unit arranged within a processing cup and configured to horizontally hold a substrate, a rotating mechanism configured to rotate the substrate holding unit about a vertical axis, a processing liquid supply unit configured to supply a processing liquid onto a surface of the substrate, and an exhaust mechanism configured to discharge an atmospheric gas around the substrate. The exhaust mechanism includes an exhaust flow path connected to an exhaust port formed at the processing cup, a circulation flow path branched from the exhaust flow path and configured to communicate with the processing cup, a gas liquid separator, a first regulator valve installed at one end of the exhaust flow path, and a second regulator valve installed at the other end of the exhaust flow path.

Abstract translation: 液体处理装置包括布置在处理杯内并被配置为水平地保持基板的基板保持单元，被配置为使基板保持单元围绕垂直轴旋转的旋转机构，配置成将处理液供给到 基板的表面，以及构造成将基板周围的大气气体排出的排气机构。 排气机构包括连接到形成在处理杯处的排气口的排气流路，从排气流路分支配置成与处理杯连通​​的循环流路，气液分离器，安装在处理杯一侧的第一调节阀 排气流路的端部，以及安装在排气流路的另一端的第二调节阀。