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公开(公告)号：US20160167079A1
公开(公告)日：2016-06-16
申请号：US14963802
申请日：2015-12-09
Applicant: Tokyo Electron Limited
Inventor： Takafumi HASIMOTO , Shinichi HATAKEYAMA , Naoki SHIBATA , Kousuke YOSHIHARA , Minoru KUBOTA , Hiroyuki IDE
CPC classification number: G05B15/02 , B05D1/005 , B05D3/042 , B05D3/0466 , B05D3/104 , G03F7/162 , H01L21/6715
Abstract: There is provided a coating method which can apply a coating solution uniformly onto a substrate surface while reducing the amount of the coating solution supplied. The coating method for applying a coating solution onto a wafer includes the steps of: supplying a solvent for the coating solution onto the wafer to form an annular liquid film of the solvent in a peripheral area of the wafer; supplying the coating solution to the center of the wafer while rotating the wafer at a first rotational speed (time t1-t2); and allowing the coating solution to spread on the wafer by rotating the wafer at a second rotational speed which is higher than the first rotational speed (time t4-t5). The supply of the solvent is continued until just before the coating solution comes into contact with the liquid film of the solvent (time t0-t3).
Abstract translation: 提供了一种涂布方法，其可以在减少涂布溶液的量的同时将涂布溶液均匀地涂布在基材表面上。 将涂布溶液涂布在晶片上的涂布方法包括以下步骤：向晶片供给涂布溶液的溶剂，以在晶片的周边区域形成溶剂的环状液膜; 在第一旋转速度（时间t1-t2）旋转晶片的同时将涂布溶液供应到晶片的中心; 并且通过以高于第一转速（时刻t4-t5）的第二转速旋转晶片，使涂布液在晶片上扩散。 溶剂的供给继续进行，直到涂布液与溶剂的液膜接触（时刻t0-t3）为止。
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2.发明申请公开(公告)号：US20220171294A1
公开(公告)日：2022-06-02
申请号：US17522050
申请日：2021-11-09
Applicant: Tokyo Electron Limited
Inventor： Yuichiro KUNUGIMOTO , Shota UEYAMA , Akihiro TERAMOTO , Yuta NISHIYAMA , Shinichi HATAKEYAMA
Abstract: A substrate processing system includes: a measuring unit provided detachably with respect to a placement portion of a placement stage; a measuring jig for measuring a processing liquid; a liquid processing unit including a supplier which supplies the processing liquid to the measuring jig; a transfer mechanism for transferring the measuring jig between the measuring unit and the liquid processing unit; and a controller. The controller executes: a process of transferring the measuring jig in the measuring unit from the measuring unit to the liquid processing unit; a process of ejecting the processing liquid from the supplier to the measuring jig; a third process of transferring the measuring jig from the liquid processing unit to the measuring unit; and a fourth process of calculating an ejection amount of the processing liquid based on a measurement value in the measuring unit.
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Patent Agency Ranking
公开(公告)号：US20200147637A1
公开(公告)日：2020-05-14
申请号：US16468356
申请日：2017-11-24
Applicant: Tokyo Electron Limited
Inventor： Shogo INABA , Kosuke YOSHIHARA , Shinichi HATAKEYAMA
Abstract: A method for coating a top of a substrate with a coating solution, the method includes: supplying, before a solution film of the coating solution formed on the substrate dries, a solvent for the coating solution to a peripheral portion on the solution film of the coating solution on the substrate while rotating the substrate at a predetermined rotation speed to form a mixed layer of the coating solution and the solvent at the peripheral portion; and then, controlling a film thickness of the coating solution after drying by rotating the substrate at a rotation speed higher than the predetermined rotation speed to push the mixed layer to an outer peripheral side.
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4.发明申请COATING TREATMENT METHOD WITH AIRFLOW CONTROL, AND NON-TRANSITORY RECORDING MEDIUM HAVING PROGRAM RECORDED THEREON FOR EXECUTING COATING TREATMENT WITH AIRFLOW CONTROL 审中-公开具有气流控制的涂层处理方法和具有记录在其上的程序记录的非隔断记录介质用于执行带有气流控制的涂层处理公开(公告)号：US20150371853A1
公开(公告)日：2015-12-24
申请号：US14813820
申请日：2015-07-30
Applicant: TOKYO ELECTRON LIMITED
Inventor： Kousuke YOSHIHARA , Koji TAKAYANAGI , Shinichi HATAKEYAMA , Kohei KAWAKAMI
IPC: H01L21/033 , H01L21/027
CPC classification number: H01L21/0337 , B05C11/023 , B05D1/005 , G03F7/162 , G06F19/00 , H01L21/0271 , H01L21/6715 , H01L51/0003 , H01L2224/03418
Abstract: A coating treatment apparatus supplying a coating solution to a front surface of a rotated substrate and diffusing the supplied coating solution to an outer periphery side of the substrate to thereby apply the coating solution on the front surface of the substrate includes: a substrate holding part holding a substrate; a rotation part rotating the substrate held on the substrate holding part; a supply part supplying a coating solution to a front surface of the substrate held on the substrate holding part; and an airflow control plate provided at a predetermined position above the substrate held on the substrate holding part for locally changing an airflow above the substrate rotated by the rotation part at an arbitrary position.
Abstract translation: 一种涂布处理装置，其将涂布溶液供给到旋转的基板的前表面，并将供给的涂布溶液扩散到基板的外周侧，从而将涂布液涂布在基板的前表面上，包括：保持基板 底物; 旋转部，旋转保持在所述基板保持部上的所述基板; 供给部，其向保持在所述基板保持部的所述基板的前表面供给涂布液; 以及气流控制板，其设置在保持在所述基板保持部上的所述基板上方的预定位置，用于在任意位置局部地改变由所述旋转部旋转的所述基板上方的气流。
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公开(公告)号：US20230418166A1
公开(公告)日：2023-12-28
申请号：US18213785
申请日：2023-06-23
Applicant: Tokyo Electron Limited
Inventor： Yuichiro KUNUGIMOTO , Shota UEYAMA , Akihiro TERAMOTO , Yuta NISHIYAMA , Shinichi HATAKEYAMA
Abstract: A substrate processing system includes: a measuring unit provided detachably with respect to a placement portion of a placement stage; a measuring jig for measuring a processing liquid; a liquid processing unit including a supplier which supplies the processing liquid to the measuring jig; a transfer mechanism for transferring the measuring jig between the measuring unit and the liquid processing unit; and a controller. The controller executes: a process of transferring the measuring jig in the measuring unit from the measuring unit to the liquid processing unit; a process of ejecting the processing liquid from the supplier to the measuring jig; a third process of transferring the measuring jig from the liquid processing unit to the measuring unit; and a fourth process of calculating an ejection amount of the processing liquid based on a measurement value in the measuring unit.
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公开(公告)号：US20180021804A1
公开(公告)日：2018-01-25
申请号：US15549435
申请日：2016-02-04
Applicant: Tokyo Electron Limited
Inventor： Takafumi HASHIMOTO , Shinichi HATAKEYAMA , Naoki SHIBATA , Kousuke YOSHIHARA
IPC: B05D1/00 , B05D3/10 , H01L21/027 , H01L21/67
CPC classification number: B05D1/005 , B05C11/08 , B05D3/104 , G03F7/091 , G03F7/162 , G03F7/2028 , H01L21/027 , H01L21/6715 , H01L21/67253
Abstract: A coating treatment method of applying a coating solution onto a substrate, includes: a solvent liquid film formation step of forming a first liquid film of a solvent at a middle portion of the substrate and forming a ring-shaped second liquid film having a film thickness larger than a film thickness of the first liquid film of the solvent at an outer peripheral portion of the substrate; a coating solution supply step of supplying the coating solution to a center portion of the substrate while rotating the substrate at a first rotation speed; and a coating solution diffusion step of diffusing the coating solution on the substrate by rotating the substrate at a second rotation speed higher than the first rotation speed while supplying the coating solution.
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7.发明申请公开(公告)号：US20160209748A1
公开(公告)日：2016-07-21
申请号：US14963831
申请日：2015-12-09
Applicant: Tokyo Electron Limited
Inventor： Takafumi HASIMOTO , Shinichi HATAKEYAMA , Naoki SHIBATA
IPC: G03F7/16
CPC classification number: G03F7/16
Abstract: There are provided a liquid processing method, a liquid processing apparatus and a recording medium for liquid processing which can enhance the uniformity of the coating state of a processing liquid on a substrate. A coating unit U1 includes a rotary holder 20 for rotating a wafer W, a nozzle 32 for supplying a processing liquid R onto a surface Wa of the wafer W, and a controller 60 for controlling the position of the nozzle 32 with respect to the wafer W. A liquid processing method includes: starting the supply of the processing liquid R to the surface Wa of the wafer W at an eccentric position at a distance from the center CL1 of rotation of the wafer W, and moving the position on the wafer W to which the processing liquid R is supplied toward the center CL1 of rotation of the wafer W while rotating the wafer W at a first rotational speed ω1; and, after the processing liquid supply position has reached the center CL1 of rotation of the wafer W, rotating the wafer W at a second rotational speed ω2 which is higher than the first rotational speed ω1, thereby allowing the processing liquid R to spread toward the periphery of the wafer W.
Abstract translation: 提供液体处理方法，液体处理装置和用于液体处理的记录介质，其可以增强基板上的处理液体的涂布状态的均匀性。 涂布单元U1包括用于旋转晶片W的旋转保持器20，用于将处理液体R提供到晶片W的表面Wa上的喷嘴32和用于控制喷嘴32相对于晶片的位置的控制器60 液体处理方法包括：在与晶片W的旋转中心CL1相距一定距离的偏心位置处开始向晶片W的表面Wa供应处理液体R，并且移动晶片W上的位置 在以第一转速ω1旋转晶片W的同时，向晶片W的旋转中心CL1供给处理液R; 在处理液供给位置到达晶片W的旋转中心CL1之后，以比第一转速ω1高的第二转速ω2转动晶片W，从而使处理液R朝向 晶圆W.
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