公开(公告)号：US20200016521A1

公开(公告)日：2020-01-16

申请号：US16580292

申请日：2019-09-24

Applicant: Tokyo Electron Limited

Inventor： Yuichi YOSHIDA ,  Ryouichirou NAITOU ,  Arnaud Alain Jean DAUENDORFFER ,  Koji TAKAYANAGI ,  Shinobu MIYAZAKI

IPC: B01D37/02 ,  B01D35/18

Abstract: In one embodiment, after a new filter unit is installed in a treatment liquid supply apparatus, there is performed, before a solvent-containing treatment liquid is passed through the filter unit, a step of soaking the filter unit with a solvent for pretreatment and then discharging therefrom the solvent. The solubility of a material, constituting a filter part of the filter unit, to the solvent is greater than the solubility of the material to the treatment liquid. This step makes it possible to remove a component, which may elute from the filter part into the treatment liquid to produce foreign matters (particles), before treatment liquid is passed through the filter unit.

公开(公告)号：US20240347354A1

公开(公告)日：2024-10-17

申请号：US18632500

申请日：2024-04-11

Applicant: Tokyo Electron Limited

Inventor： Ryouichirou NAITOU ,  Shinichiro KAWAKAMI ,  Tomoya ONITSUKA ,  Soichiro OKADA ,  Satoru SHIMURA

IPC: H01L21/67 ,  G03F7/38 ,  H01L21/027

CPC classification number: H01L21/67109 ,  H01L21/0274 ,  H01L21/67017 ,  G03F7/38

Abstract: A heat-treating method of performing a heat treatment on a substrate on which a film of a metal-containing resist film is formed and which is subjected to an exposure treatment, includes an operation of heating the substrate for a predetermined period of time at a heating temperature at which a metal-containing sublimate is not generated from the film of the metal-containing resist, wherein during the operation of heating the substrate, a reactive fluid in which a concentration of at least one of a carbon dioxide or moisture is higher than a concentration in an atmosphere to promote a reaction within the film of the metal-containing resist, is supplied to a processing space around the substrate.

公开(公告)号：US20200090967A1

公开(公告)日：2020-03-19

申请号：US16692152

申请日：2019-11-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Seiichi KURE ,  Ryouichirou NAITOU ,  Hideo SHITE

IPC: H01L21/67 ,  H01L21/027 ,  H01L21/31

Abstract: A substrate processing apparatus includes a nozzle for discharging a processing solution, a processing solution supply part for supplying the processing solution to the nozzle and a controller. The processing solution supply part includes a tank, a first conduit for guiding the processing solution from the tank to the nozzle, a pump installed in the first conduit, and a filter having first and second spaces, and a filtering member for separating between the first space and the second space. The controller performs a first control process of controlling the processing solution supply part to flow the processing solution from the first space to the second space through the filtering member by the pump, and after the first control process, a second control process of controlling the processing solution supply part to flow the processing solution from the second space to the first space through the filtering member by the pump.

公开(公告)号：US20140352737A1

公开(公告)日：2014-12-04

申请号：US14283331

申请日：2014-05-21

Applicant: Tokyo Electron Limited

Inventor： Atsushi OOKOUCHI ,  Kousuke YOSHIHARA ,  Hiroshi ICHINOMIYA ,  Hirosi NISIHATA ,  Ryouichirou NAITOU

IPC: H01L21/67

CPC classification number: H01L21/67051

Abstract: A cleaning liquid and a gas are discharged in sequence to a central portion of a substrate while the substrate is being rotated, and after nozzles that discharge them are moved to a peripheral edge side of the substrate, discharge of the cleaning liquid is switched to a second cleaning liquid nozzle set at a position deviated from a movement locus of the first cleaning liquid nozzle. Both of the nozzles are moved toward the peripheral edge side of the substrate while discharging the cleaning liquid and discharging the gas so that a difference between a distance from the discharge position of the second cleaning liquid nozzle to the central portion of the substrate and a distance from the discharge position of the gas nozzle to the central portion of the substrate gradually decreases.

Abstract translation: 在基板旋转的同时，将清洗液和气体顺序地排出到基板的中心部分，在将其排出的喷嘴移动到基板的周缘侧后，将清洗液的排出切换为 第二清洗液喷嘴设置在偏离第一清洗液喷嘴的移动轨迹的位置。 两个喷嘴在排出清洁液体并排出气体的同时朝向基板的周缘侧移动，使得从第二清洗液喷嘴的排出位置到基板的中心部分的距离与距离 从气体喷嘴的排出位置到基板的中央部逐渐减小。

公开(公告)号：US20200290080A1

公开(公告)日：2020-09-17

申请号：US16768216

申请日：2018-12-07

Applicant: Tokyo Electron Limited

Inventor： Ryouichirou NAITOU ,  Masato HAYASHI ,  Hideo SHITE ,  Hiroyuki IDE ,  Yosuke KAMEDA ,  Seiya TOTSUKA ,  Atsumu MAITA ,  Takami SATOH ,  Hirofumi ARAKI ,  Kentaro YOSHIHARA

IPC: B05C19/06 ,  B05C11/10

Abstract: A solution supply apparatus for supplying a treatment solution to a treatment solution discharger configured to discharge the treatment solution to a treatment object, the solution supply apparatus includes: a supply pipe line connected to the treatment solution discharger; a filter provided on the supply pipe line and configured to filter the treatment solution to remove foreign substances; and a controller configured to perform a determination of a state of the treatment solution to be supplied to a primary side of the filter and, when the state of the treatment solution is determined to be bad, to output a control signal for restricting supply of the treatment solution to the primary side of the filter.

公开(公告)号：US20180061690A1

公开(公告)日：2018-03-01

申请号：US15681494

申请日：2017-08-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Seiichi KURE ,  Ryouichirou NAITOU ,  Hideo SHITE

IPC: H01L21/67 ,  H01L21/027 ,  H01L21/31

CPC classification number: H01L21/67225 ,  H01L21/0274 ,  H01L21/31 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/6715 ,  H01L21/67161 ,  H01L21/67253

Abstract: A substrate processing apparatus includes a nozzle for discharging a processing solution, a processing solution supply part for supplying the processing solution to the nozzle and a controller. The processing solution supply part includes a tank, a first conduit for guiding the processing solution from the tank to the nozzle, a pump installed in the first conduit, and a filter having first and second spaces, and a filtering member for separating between the first space and the second space. The controller performs a first control process of controlling the processing solution supply part to flow the processing solution from the first space to the second space through the filtering member by the pump, and after the first control process, a second control process of controlling the processing solution supply part to flow the processing solution from the second space to the first space through the filtering member by the pump.

公开(公告)号：US20210124303A1

公开(公告)日：2021-04-29

申请号：US17258937

申请日：2019-07-08

Applicant: Tokyo Electron Limited

Inventor： Ryouichirou NAITOU ,  Hidenori TOSU ,  Takahiro YAMAGUCHI ,  Seiichi KURE

IPC: G03G21/16 ,  H01L21/027

Abstract: A developing treatment apparatus for performing a developing treatment on a treatment object substrate, the developing treatment apparatus includes: a rotating and holding part configured to hold and rotate the treatment object substrate; a discharger configured to discharge a predetermined solution relating to the developing treatment to the treatment object substrate held on the rotating and holding part; and a destaticizer configured to supply ions ionized by an X-ray to the predetermined solution discharged to the treatment object substrate held on the rotating and holding part, to destaticize the predetermined solution.

公开(公告)号：US20170256427A1

公开(公告)日：2017-09-07

申请号：US15598358

申请日：2017-05-18

Applicant: Tokyo Electron Limited

Inventor： Atsushi OOKOUCHI ,  Kousuke YOSHIHARA ,  Hiroshi ICHINOMIYA ,  Hirosi NISIHATA ,  Ryouichirou NAITOU

IPC: H01L21/67

CPC classification number: H01L21/67051

Abstract: A cleaning liquid and a gas are discharged in sequence to a central portion of a substrate while the substrate is being rotated, and after nozzles that discharge them are moved to a peripheral edge side of the substrate, discharge of the cleaning liquid is switched to a second cleaning liquid nozzle set at a position deviated from a movement locus of the first cleaning liquid nozzle. Both of the nozzles are moved toward the peripheral edge side of the substrate while discharging the cleaning liquid and discharging the gas so that a difference between a distance from the discharge position of the second cleaning liquid nozzle to the central portion of the substrate and a distance from the discharge position of the gas nozzle to the central portion of the substrate gradually decreases.

公开(公告)号：US20160236124A1

公开(公告)日：2016-08-18

申请号：US15025045

申请日：2014-09-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichi YOSHIDA ,  Ryouichirou NAITOU ,  Arnaud Alain Jean DAUENDORFFER ,  Koji TAKAYANAGI ,  Shinobu MIYAZAKI

IPC: B01D37/02 ,  B01D35/18

CPC classification number: B01D37/02 ,  B01D35/18 ,  H01L21/67017

Abstract: In one embodiment, after a new filter unit (3) is installed in a treatment liquid supply apparatus, there is performed, before a solvent-containing treatment liquid is passed through the filter unit, a step of soaking the filter unit with a solvent for pretreatment and then discharging therefrom the solvent. The solubility of a material, constituting a filter part (31) of the filter unit, to the solvent is greater than the solubility of the material to the treatment liquid. This step makes it possible to remove a component, which may elute from the filter part into the treatment liquid to produce foreign matters (particles), before treatment liquid is passed through the filter unit.

Abstract translation: 在一个实施例中，在将新的过滤器单元（3）安装在处理液供给装置中之后，在使含溶剂的处理液通过过滤器单元之前，进行将过滤器单元与溶剂浸泡的步骤 预处理，然后从其中排出溶剂。 构成过滤器单元的过滤器部件（31）的材料对溶剂的溶解度大于材料对处理液体的溶解度。 该步骤使得可以在处理液体通过过滤器单元之前去除可能从过滤部分洗脱到处理液中以产生异物（颗粒）的组分。