公开(公告)号：US20250046658A1

公开(公告)日：2025-02-06

申请号：US18782981

申请日：2024-07-24

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki KARASAWA ,  Masakazu YAMAMOTO ,  Yuichi TAKENAGA ,  Youngtai KANG ,  Shota YAMAZAKI

IPC: H01L21/66 ,  C23C16/46 ,  C23C16/52

Abstract: A substrate processing method includes providing a substrate processing apparatus including a processing container that accommodates a substrate, and a heater that heats an inside of the processing container; setting a specific section with an in-plane temperature distribution of a substrate that results in a desired outcome of substrate processing based on a first prediction model that predicts a time-dependent change of the in-plane temperature distribution of the substrate after temperature increase or decrease caused by the heater; and performing the substrate processing in the specific section.

公开(公告)号：US20240063034A1

公开(公告)日：2024-02-22

申请号：US18229471

申请日：2023-08-02

Applicant: Tokyo Electron Limited

Inventor： Masakazu YAMAMOTO ,  Tadashi ENOMOTO ,  Hiroyuki KARASAWA

IPC: H01L21/67

CPC classification number: H01L21/67109 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/6719

Abstract: An information processing system includes a heat treatment apparatus that forms a film on a processing target substrate by using a heating unit that heats the processing target substrate inside a processing container, and an information processing apparatus that controls power supplied to the heating part, the information processing system comprising a prediction unit configured to predict an influence of a cumulative film adhering inside the processing container, on a temperature of the processing target substrate by using a simulation model of the heat treatment apparatus and an adjuster configured to adjust the power supplied to the heating part based on the predicted influence of the cumulative film adhering inside the processing container, on the temperature of the processing target substrate.

公开(公告)号：US20240256919A1

公开(公告)日：2024-08-01

申请号：US18425060

申请日：2024-01-29

Applicant: Tokyo Electron Limited

Inventor： Yusuke TSUCHIYA ,  Masakazu YAMAMOTO ,  Hiroyuki KARASAWA

IPC: G06N5/022

CPC classification number: G06N5/022

Abstract: An information processing apparatus that identifies a machine difference in a heat treatment apparatus for heat-treating a processing target substrate includes a time series data acquisition unit that acquires time series data regarding temperature behavior of heat treatment apparatuses that have executed a recipe, a time series data prediction unit that predicts time series data regarding temperature behavior of the heat treatment apparatuses that have executed the recipe, using an ideal virtual model of the heat treatment apparatuses, a difference data calculation unit that calculates difference data between the acquired time series data and the predicted time series data for each of the heat treatment apparatuses, an adjustment unit that adjusts a parameter of the virtual model for each heat treatment apparatus, using the difference data, and a machine difference identification unit that identifies the machine difference candidate parameter based on a change in the parameter before and after adjustment.

公开(公告)号：US20240011161A1

公开(公告)日：2024-01-11

申请号：US18218484

申请日：2023-07-05

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki KARASAWA

IPC: C23C16/52 ,  C23C16/46 ,  C23C16/458 ,  C23C16/40

CPC classification number: C23C16/52 ,  C23C16/46 ,  C23C16/4584 ,  C23C16/401

Abstract: A parameter setting method includes: (a) acquiring a first index indicating a thermal effect of a temperature control of a temperature adjustment unit on a processing container of a substrate processing apparatus when no film is present on an inner surface of the processing container; (b) acquiring a film thickness of a film on the inner surface of the processing container, and a second index indicating a thermal effect of the temperature control of the temperature control unit on the processing container when the film is present on the inner surface of the processing container; and (c) acquiring a third index indicating a thermal effect of the temperature control of the temperature adjustment unit on the processing container when a film is formed on the inner surface of the processing container, and estimating a film thickness of the film formed on the inner surface of the processing container.

公开(公告)号：US20230070064A1

公开(公告)日：2023-03-09

申请号：US17939457

申请日：2022-09-07

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki KARASAWA ,  Tomohiro SAITO

IPC: H01L21/67 ,  G01F22/02

Abstract: A raw material feeding device includes: a raw material container that accommodates a solid or liquid raw material; an upstream path connected to the raw material container; a downstream path connected to the raw material container; a bypass path that connects the upstream path and the downstream path to each other without passing through the raw material container; a downstream side valve; a pressure gauge provided in at least one of the upstream path and the downstream path; and a remaining amount estimation unit that acquires a pressure detection value from the pressure gauge, and estimates a remaining amount of the raw material within the raw material container based on the pressure detection value decreased when the downstream side valve is opened at start of flowing of the raw material gas from the raw material container to the downstream path.

公开(公告)号：US20220344180A1

公开(公告)日：2022-10-27

申请号：US17659514

申请日：2022-04-18

Applicant: Tokyo Electron Limited

Inventor： Hiroyuki KARASAWA ,  Masakazu YAMAMOTO ,  Tadashi ENOMOTO

IPC: H01L21/67

Abstract: An An information processing system includes a temperature measuring unit configured to measure a temperature distribution, in an array direction of substrates to be treated, at positions between a heater and the substrates in a treatment chamber, a memory, and a processor coupled to the memory and configured to perform a simulation of the temperature distribution during performing the heat treatment on the substrates in the treatment chamber, to obtain a standard-simulation temperature distribution by using a standard-simulation model of the heat treatment apparatus, modify the standard-simulation model to obtain an individual-simulation model in which an individual difference of the heat treatment apparatus is reflected, based on a difference between the measured temperature distribution and the obtained standard-simulation temperature distribution, perform the simulation of the temperature distribution to obtain an individual-simulation temperature distribution by using the obtained individual-simulation model, and correct a target temperature by using the obtained individual-simulation temperature distribution.