公开(公告)号：US11328904B2

公开(公告)日：2022-05-10

申请号：US16905003

申请日：2020-06-18

Applicant: Tokyo Electron Limited

Inventor： Shigeki Doba ,  Hiroyuki Ogawa ,  Hajime Naito ,  Akitaka Shimizu ,  Tatsuo Matsudo

IPC: H01J21/20 ,  H01J37/32 ,  H01L21/67

Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.

公开(公告)号：US20140311676A1

公开(公告)日：2014-10-23

申请号：US14370279

申请日：2013-01-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideyuki Hatoh ,  Shigeki Doba ,  Shinya Yamamoto ,  Satoshi YAMADA ,  Hiroto Mori ,  Kenji Ando

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01L21/3065 ,  H01L21/31138 ,  H01L21/6835 ,  H01L21/68721 ,  H01L21/68735 ,  H01L21/76898 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68386

Abstract: A substrate mounting table (94) is equipped with a mounting table (2), an electrostatic chuck (6), and a bevel covering (5). The electrostatic chuck (6) has a supporting surface (6e) which is in contact with the whole of the rear surface of a wafer (W). The annular bevel covering (5) has an outer diameter (DA) which is greater than that of the supporting surface (6e), and an inner diameter (DI) which is smaller than that of the wafer (W). The bevel covering (5) is disposed such that, when viewed from the direction orthogonal to the supporting surface (6e), the bevel covering (5) surrounds the periphery of the wafer (W) supported on the supporting surface (6e).

Abstract translation: 基板安装台（94）配备有安装台（2），静电卡盘（6）和斜面盖（5）。 静电卡盘（6）具有与晶片（W）的整个背面接触的支撑面（6e）。 环形斜面罩（5）的外径（DA）大于支撑面（6e）的外径（DA），内径（DI）小于晶片（W）的直径。 斜面覆盖物（5）设置成使得当从与支撑表面（6e）正交的方向观察时，斜面覆盖物（5）围绕支撑在支撑表面（6e）上的晶片（W）的周边。

公开(公告)号：US12266562B2

公开(公告)日：2025-04-01

申请号：US17450209

申请日：2021-10-07

Applicant: Tokyo Electron Limited

Inventor： Hajime Naito ,  Hidenori Miyoshi ,  Shigeki Doba

IPC: H01J37/32 ,  H01L21/677 ,  H01L21/687

Abstract: There is provided a method of processing a substrate using a substrate processing apparatus including: a processing container configured to process the substrate therein; a plasma generation space formed inside the processing container; a processing space in communication with the plasma generation space via a partition plate; a stage provided inside the processing space and configured to place the substrate on a top surface of the stage; and a lifting mechanism configured to raise and lower the substrate on the stage, the method including, during a plasma processing on the substrate in the processing space, raising and lowering the substrate using the lifting mechanism to cause a potential change in the substrate during the plasma processing.

公开(公告)号：US10734201B2

公开(公告)日：2020-08-04

申请号：US15449675

申请日：2017-03-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeki Doba ,  Hiroyuki Ogawa ,  Hajime Naito ,  Akitaka Shimizu ,  Tatsuo Matsudo

IPC: H01J37/32 ,  H01L21/67

Abstract: A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.

公开(公告)号：US10090161B2

公开(公告)日：2018-10-02

申请号：US15404471

申请日：2017-01-12

Applicant: Tokyo Electron Limited

Inventor： Shigeki Doba ,  Satoshi Yamada

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/687 ,  H01L21/768 ,  H01L21/311

Abstract: A plasma etching apparatus performs plasma etching on a substrate having a resist pattern formed thereon and an outer edge portion where the substrate surface is exposed. The plasma etching apparatus includes a support part that supports the substrate, a cover member that covers the outer edge portion of the substrate and prevents plasma from coming around the outer edge portion, and a control unit that generates plasma by controlling high frequency power application and supply of a processing gas for etching, and uses the generated plasma to etch the substrate that is supported by the support part and has the outer edge portion covered by the cover member. After etching the substrate, the control unit generates plasma by controlling high frequency power application and supply of a processing gas for ashing, and uses the generated plasma to perform ashing on the resist pattern on the etched substrate.