公开(公告)号：US20240038501A1

公开(公告)日：2024-02-01

申请号：US18380066

申请日：2023-10-13

Applicant: Tokyo Electron Limited

Inventor： Akira NAKAGAWA ,  Kenji KOMATSU ,  Kazuma KAMIMURA ,  Tsukasa HIRAYAMA

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32449 ,  H01L21/3065 ,  H01L21/67069 ,  H01J37/32357 ,  H01L21/6831 ,  H01J2237/334

Abstract: A substrate etching method performed by using a plasma processing apparatus includes: providing a substrate including a silicon-containing film to a substrate support; periodically supplying, to the substrate support, bias RF power of 20 kW to 50 kW at a duty ratio of 5% to 50%; and etching the silicon-containing film by plasma generated from a processing gas containing a fluorocarbon gas and an oxygen-containing gas