公开(公告)号：US20150228459A1

公开(公告)日：2015-08-13

申请号：US14426671

申请日：2013-09-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Naoki Matsumoto ,  Yugo Tomita ,  Naoki Mihara ,  Kazuki Takahashi ,  Michitaka Aita ,  Jun Yoshikawa ,  Takahiro Senda ,  Yoshiyasu Sato ,  Kazuyuki Kato ,  Kenji Sudou ,  Hitoshi Mizusugi

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/66795

Abstract: In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.

Abstract translation: 在示例性实施例的等离子体处理装置中，微波的能量通过电介质窗从天线引入处理容器。 等离子体处理装置包括中央引入单元和外围引入单元。 中央引入单元的中心引入口喷射恰好在电介质窗口下面的气体。 周边引入单元的多个周边引入口朝向放置区域的周边注入气体。 中央引入单元通过多个第一流量控制单元与包括反应气体源和稀有气体源的多个第一气体源连接。 周边引入单元通过多个第二流量控制单元与包括反应气体源和稀有气体源的多个第二气体源连接。

公开(公告)号：US09324542B2

公开(公告)日：2016-04-26

申请号：US14426671

申请日：2013-09-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Naoki Matsumoto ,  Yugo Tomita ,  Naoki Mihara ,  Kazuki Takahashi ,  Michitaka Aita ,  Jun Yoshikawa ,  Takahiro Senda ,  Yoshiyasu Sato ,  Kazuyuki Kato ,  Kenji Sudou ,  Hitoshi Mizusugi

IPC: H01L21/302 ,  H01L21/461 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01J37/32449 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  H01L29/66795

Abstract: In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.

Abstract translation: 在示例性实施例的等离子体处理装置中，微波的能量通过电介质窗从天线引入处理容器。 等离子体处理装置包括中央引入单元和外围引入单元。 中央引入单元的中心引入口喷射恰好在电介质窗口下面的气体。 周边引入单元的多个周边引入口朝向放置区域的周边注入气体。 中央引入单元通过多个第一流量控制单元与包括反应气体源和稀有气体源的多个第一气体源连接。 周边引入单元通过多个第二流量控制单元与包括反应气体源和稀有气体源的多个第二气体源连接。

公开(公告)号：US08889023B2

公开(公告)日：2014-11-18

申请号：US13728551

申请日：2012-12-27

Applicant: Tokyo Electron Limited

Inventor： Naoki Matsumoto ,  Wataru Yoshikawa ,  Yasuhiro Seo ,  Kazuyuki Kato

IPC: B44C1/22 ,  C03C1/00 ,  C03C25/68 ,  C23F1/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/3213

CPC classification number: H01J37/32449 ,  H01J37/32192 ,  H01J37/32238 ,  H01L21/3065 ,  H01L21/32136

Abstract: A plasma processing apparatus includes a flow splitter for dividing a common gas into two common gas streams of common gas branch lines. A central introduction portion connected to one of the common gas branch lines supplies a common gas to a central portion of a substrate to be processed. A peripheral introducing portion connected to the other one of the common gas branch lines supplies the common gas to a peripheral portion of the substrate. The peripheral introducing portion has peripheral inlets arranged about a circumferential region above the substrate. An additive gas line is connected to an additive gas source to add an additive gas to at least one of the common gas branch lines. In addition, an electron temperature of a plasma in a region where the peripheral inlets are disposed is lower than that in a region where the introduction portion is disposed.

Abstract translation: 等离子体处理装置包括用于将普通气体分成公共气体支线的两个公共气体流的分流器。 连接到公共气体支路之一的中心引入部分将公共气体提供给待处理的基板的中心部分。 连接到另一个公共气体支路的周边引入部分将公共气体提供给基板的周边部分。 周边引入部具有围绕基板上方的圆周区域布置的周边入口。 添加气体管线连接到添加气体源，以将添加气体添加到至少一个公共气体分支管线。 此外，设置周边入口的区域中的等离子体的电子温度低于放置引入部分的区域中的等离子体的电子温度。