公开(公告)号：US20230111278A1

公开(公告)日：2023-04-13

申请号：US17961589

申请日：2022-10-07

Applicant: Tokyo Electron Limited

Inventor： Soya TODO ,  Ryohei TAKEDA ,  Muneyuki OMI ,  Shin OKAMOTO ,  Joji TAKAYOSHI

IPC: H01J37/32

Abstract: The present disclosure provides a non-transitory computer-readable storage medium storing a control program of a plasma processing apparatus which performs a plasma processing by supplying a source power to a plasma generator and supplying a bias power to a stage that places a processing target substrate thereon. The control program causes a computer to execute a process including: monitoring a peak-to-peak voltage value of the source power or the bias power; and correcting the source power supplied to the plasma generator and the bias power supplied to the stage according to a fluctuation of the peak-to-peak voltage value, to make the monitored peak-to-peak voltage value approach an initial set value while fixing a ratio of the source power and the bias power.

公开(公告)号：US20170178921A1

公开(公告)日：2017-06-22

申请号：US15375405

申请日：2016-12-12

Applicant: Tokyo Electron Limited

Inventor： Ryohei TAKEDA ,  Sho TOMINAGA ,  Yoshinobu OOYA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/334

Abstract: An etching method performed by an etching apparatus includes a first process of causing a first high-frequency power supply to output a first high-frequency power with a first frequency and causing a second high-frequency power supply to output a second high-frequency power with a second frequency lower than the first frequency in a cryogenic environment where the temperature of a wafer is −35° C. or lower, to generate plasma from a hydrogen-containing gas and a fluorine-containing gas and to etch, with the plasma, a multi-layer film of silicon dioxide and silicon nitride and a single-layer film of silicon dioxide that are formed on the wafer; and a second process of stopping the output of the second high-frequency power supply. The first process and the second process are repeated multiple times, and the first process is shorter in time than the second process.

公开(公告)号：US20230298867A1

公开(公告)日：2023-09-21

申请号：US18122469

申请日：2023-03-16

Applicant: Tokyo Electron Limited

Inventor： Keita YAEGASHI ,  Joji TAKAYOSHI ,  Takayuki SUZUKI ,  Ryohei TAKEDA ,  Soya TODO ,  Yusuke SAITOH ,  Takaharu SAINO

IPC: H01J37/32 ,  G05B19/4099

CPC classification number: H01J37/32669 ,  G05B19/4099 ,  H01J2237/24564 ,  H01J2237/3343 ,  G05B2219/45031

Abstract: A prediction method includes a calculation process and a prediction process. The calculation process calculates a correlation between a spatial distribution value of a magnetic field in a chamber when a plasma etching process is performed on a substrate disposed in the chamber, and a process result of the plasma etching process on the substrate. The prediction process predicts the process result of the plasma etching process on the substrate from the spatial distribution value of the magnetic field in the chamber based on the calculated correlation.

公开(公告)号：US20180261465A1

公开(公告)日：2018-09-13

申请号：US15977043

申请日：2018-05-11

Applicant: Tokyo Electron Limited

Inventor： Ryohei TAKEDA ,  Sho TOMINAGA ,  Yoshinobu OOYA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/0217

Abstract: An etching method performed by an etching apparatus includes a first process of causing a first high-frequency power supply to output a first high-frequency power with a first frequency and causing a second high-frequency power supply to output a second high-frequency power with a second frequency lower than the first frequency in a cryogenic environment where the temperature of a wafer is −35° C. or lower, to generate plasma from a hydrogen-containing gas and a fluorine-containing gas and to etch, with the plasma, a multi-layer film of silicon dioxide and silicon nitride and a single-layer film of silicon dioxide that are formed on the wafer; and a second process of stopping the output of the second high-frequency power supply. The first process and the second process are repeated multiple times, and the first process is shorter in time than the second process.

公开(公告)号：US20160379856A1

公开(公告)日：2016-12-29

申请号：US15180273

申请日：2016-06-13

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Ryohei TAKEDA ,  Ryuichi TAKASHIMA ,  Yoshinobu OOYA

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32642 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32724 ,  H01J37/32935 ,  H01J2237/334 ,  H01L21/31116

Abstract: An etching method is provided. In the etching method, a silicon oxide film is etched by using plasma in a first condition. In the first condition, a surface temperature of a substrate is controlled to have a temperature lower than −35 degrees C., and the plasma is generated from a hydrogen-containing gas and a fluorine-containing gas by using first radio frequency power output from a first radio frequency power source and second radio frequency power output from a second radio frequency power source. Next, the silicon oxide film is etched by using the plasma in a second condition. In the second condition, the output of the second radio frequency power from the second radio frequency power source is stopped. The silicon oxide film is etched by using the plasma alternately in the first condition and in the second condition multiple times.

Abstract translation: 提供蚀刻方法。 在蚀刻方法中，通过在第一条件下使用等离子体来蚀刻氧化硅膜。 在第一条件下，将基板的表面温度控制在低于-35℃的温度，并且通过使用从含氢气体和含氟气体输出的第一射频功率从含氢气体和含氟气体产生等离子体 第一射频电源和从第二射频电源输出的第二射频功率。 接下来，在第二条件下通过使用等离子体来蚀刻氧化硅膜。 在第二条件下，停止来自第二射频电源的第二射频功率的输出。 在第一条件和第二条件下多次使用等离子体交替地刻蚀氧化硅膜。

公开(公告)号：US20250157798A1

公开(公告)日：2025-05-15

申请号：US19021284

申请日：2025-01-15

Applicant: Tokyo Electron Limited

Inventor： Ryohei TAKEDA ,  Wataru TAKAYAMA ,  Muneyuki OMI ,  Keita YAEGASHI ,  Sho TOMINAGA ,  Joji TAKAYOSHI

IPC: H01J37/32

Abstract: A control program for a plasma processing device that executes plasma processing by supplying source power to a plasma generation source and supplying bias power to a stage on which a substrate to be processed is placed, and the control program causes a computer to observe a peak-to-peak voltage between the source power and the bias power, and adjust the source power supplied to the plasma generation source, the bias power supplied to the stage, a direct-current voltage applied to an outer peripheral member disposed around the stage, and an impedance of a filter circuit connected between a source of the direct-current voltage and the outer peripheral member, the source power, the bias power, the direct-current voltage and the impedance being adjustment parameters for controlling a fluctuation width of the observed peak-to-peak voltage.

公开(公告)号：US20210272780A1

公开(公告)日：2021-09-02

申请号：US17320353

申请日：2021-05-14

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Ryohei TAKEDA ,  Ryuichi TAKASHIMA ,  Yoshinobu OOYA

IPC: H01J37/32 ,  H01L21/311

Abstract: A plasma processing apparatus includes a pedestal to receive a substrate thereon; a temperature control mechanism provided in the pedestal; a heat transfer gas supply mechanism configured to supply a heat transfer gas to a back surface of the substrate; a first radio frequency power source configured to output first high frequency power having a first frequency; a second radio frequency power source configured to output second high frequency power having a second frequency that is lower than the first frequency; and a temperature measurement unit configured to control a surface temperature of the substrate to have a temperature lower than −35 degrees C. by using the temperature control mechanism provided in the pedestal and to perform feedback control of stopping the output of the second radio frequency power from the second radio frequency power source.

公开(公告)号：US20180174805A1

公开(公告)日：2018-06-21

申请号：US15896715

申请日：2018-02-14

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Ryohei TAKEDA ,  Ryuichi TAKASHIMA ,  Yoshinobu OOYA

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/32642 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32724 ,  H01J37/32935 ,  H01J2237/334 ,  H01L21/31116

Abstract: A plasma processing apparatus includes a pedestal to receive a substrate thereon; a temperature control mechanism provided in the pedestal; a heat transfer gas supply mechanism configured to supply a heat transfer gas to a back surface of the substrate; a first radio frequency power source configured to output first high frequency power having a first frequency; a second radio frequency power source configured to output second high frequency power having a second frequency that is lower than the first frequency; and a temperature measurement unit configured to control a surface temperature of the substrate to have a temperature lower than −35 degrees C. by using the temperature control mechanism provided in the pedestal and to perform feedback control of stopping the output of the second radio frequency power from the second radio frequency power source.

公开(公告)号：US20160189975A1

公开(公告)日：2016-06-30

申请号：US14977756

申请日：2015-12-22

Applicant: Tokyo Electron Limited

Inventor： Ryohei TAKEDA ,  Ryuichi TAKASHIMA ,  Yoshinobu OOYA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02 ,  H01L21/30 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/31144 ,  H01L21/67109 ,  H01L21/6831

Abstract: An etching method is provided. In the etching method, a temperature of a chiller configured to cool a pedestal is controlled so as to become −20 degrees C. or lower. Plasma is generated from a hydrogen-containing gas and a fluoride-containing gas supplied from a gas supply source by supplying first high frequency power having a first frequency supplied to the pedestal from a first high frequency power source. A silicon oxide film deposited on a substrate placed on the pedestal is etched by the generated plasma. Second high frequency power having a second frequency lower than the first frequency of the first high frequency power is supplied to the pedestal from a second high frequency power source in a static eliminating process after the step of etching the silicon oxide film.

Abstract translation: 提供蚀刻方法。 在蚀刻方法中，被配置为冷却台座的冷却器的温度被控制为-20℃或更低。 通过从第一高频电源提供具有提供给基座的第一频率的第一高频功率，从气体供应源供应的含氢气体和含氟化物气体产生等离子体。 通过产生的等离子体蚀刻沉积在放置在基座上的基板上的氧化硅膜。 在蚀刻氧化硅膜的步骤之后的静电消除处理中，从第二高频电源将具有低于第一高频功率的第一频率的第二频率的第二高频功率提供给基座。