公开(公告)号：US20170178921A1

公开(公告)日：2017-06-22

申请号：US15375405

申请日：2016-12-12

Applicant: Tokyo Electron Limited

Inventor： Ryohei TAKEDA ,  Sho TOMINAGA ,  Yoshinobu OOYA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/334

Abstract: An etching method performed by an etching apparatus includes a first process of causing a first high-frequency power supply to output a first high-frequency power with a first frequency and causing a second high-frequency power supply to output a second high-frequency power with a second frequency lower than the first frequency in a cryogenic environment where the temperature of a wafer is −35° C. or lower, to generate plasma from a hydrogen-containing gas and a fluorine-containing gas and to etch, with the plasma, a multi-layer film of silicon dioxide and silicon nitride and a single-layer film of silicon dioxide that are formed on the wafer; and a second process of stopping the output of the second high-frequency power supply. The first process and the second process are repeated multiple times, and the first process is shorter in time than the second process.

公开(公告)号：US20170162399A1

公开(公告)日：2017-06-08

申请号：US15361675

申请日：2016-11-28

Applicant: Tokyo Electron Limited

Inventor： Wataru TAKAYAMA ,  Sho TOMINAGA ,  Yoshiki IGARASHI

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L27/11556 ,  H01L27/11582 ,  H01L28/00

Abstract: There is provided a plasma etching method. The plasma etching method includes generating plasma, by using a first high frequency power output from a first high frequency power supply, from a first processing gas that contains fluorine-containing gas, thereby etching a laminated film of a silicon oxide film and a silicon nitride film through the generated plasma, and generating plasma, by using the first high frequency power, from a second processing gas that contains bromine-containing gas, thereby etching the laminated film through the generated plasma.

公开(公告)号：US20250157798A1

公开(公告)日：2025-05-15

申请号：US19021284

申请日：2025-01-15

Applicant: Tokyo Electron Limited

Inventor： Ryohei TAKEDA ,  Wataru TAKAYAMA ,  Muneyuki OMI ,  Keita YAEGASHI ,  Sho TOMINAGA ,  Joji TAKAYOSHI

IPC: H01J37/32

Abstract: A control program for a plasma processing device that executes plasma processing by supplying source power to a plasma generation source and supplying bias power to a stage on which a substrate to be processed is placed, and the control program causes a computer to observe a peak-to-peak voltage between the source power and the bias power, and adjust the source power supplied to the plasma generation source, the bias power supplied to the stage, a direct-current voltage applied to an outer peripheral member disposed around the stage, and an impedance of a filter circuit connected between a source of the direct-current voltage and the outer peripheral member, the source power, the bias power, the direct-current voltage and the impedance being adjustment parameters for controlling a fluctuation width of the observed peak-to-peak voltage.

公开(公告)号：US20160064245A1

公开(公告)日：2016-03-03

申请号：US14826569

申请日：2015-08-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yusuke SAITOH ,  Yu NAGATOMO ,  Hayato HISHINUMA ,  Wataru TAKAYAMA ,  Sho TOMINAGA ,  Yuki KANEKO

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J2237/334 ,  H01L21/0332 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/31144

Abstract: Disclosed is a method for etching a first region including a multi-layer film formed by providing silicon oxide films and silicon nitride films alternately, and a second region having a single silicon oxide film. The etching method includes: providing a processing target object including a mask provided on the first region and the second region within a processing container of a plasma processing apparatus; generating plasma of a first processing gas including a hydrofluorocarbon gas within the processing container that accommodates the processing target object; and generating plasma of a second processing gas including a fluorocarbon gas within the processing container that accommodates the processing target object. The step of generating the plasma of the first processing gas and the step of generating the plasma of the second processing gas are alternately repeated.

Abstract translation: 公开了一种用于蚀刻包括交替提供氧化硅膜和氮化硅膜形成的多层膜的第一区域的方法和具有单个氧化硅膜的第二区域。 蚀刻方法包括：提供处理对象物体，其包括设置在等离子体处理装置的处理容器内的第一区域和第二区域上的掩模; 在处理容器内产生包含氢氟烃气体的第一处理气体的等离子体，所述等离子体容纳所述处理目标物体; 以及在处理容器内产生包含碳氟化合物气体的第二处理气体的等离子体，其容纳处理对象物体。 交替地重复产生第一处理气体的等离子体的步骤和产生第二处理气体的等离子体的步骤。

公开(公告)号：US20180261465A1

公开(公告)日：2018-09-13

申请号：US15977043

申请日：2018-05-11

Applicant: Tokyo Electron Limited

Inventor： Ryohei TAKEDA ,  Sho TOMINAGA ,  Yoshinobu OOYA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/0217

Abstract: An etching method performed by an etching apparatus includes a first process of causing a first high-frequency power supply to output a first high-frequency power with a first frequency and causing a second high-frequency power supply to output a second high-frequency power with a second frequency lower than the first frequency in a cryogenic environment where the temperature of a wafer is −35° C. or lower, to generate plasma from a hydrogen-containing gas and a fluorine-containing gas and to etch, with the plasma, a multi-layer film of silicon dioxide and silicon nitride and a single-layer film of silicon dioxide that are formed on the wafer; and a second process of stopping the output of the second high-frequency power supply. The first process and the second process are repeated multiple times, and the first process is shorter in time than the second process.

公开(公告)号：US20180226264A1

公开(公告)日：2018-08-09

申请号：US15949185

申请日：2018-04-10

Applicant: Tokyo Electron Limited

Inventor： Wataru TAKAYAMA ,  Sho TOMINAGA ,  Yoshiki IGARASHI

IPC: H01L21/311 ,  H01L27/11582 ,  H01L27/11556

Abstract: A plasma etching method includes a first process of generating a first plasma from a first processing gas that contains fluorine-containing gas and hydrogen-containing gas, by using a first radio frequency power, to etch a laminated film including a first silicon-containing film layer and a second silicon-containing film layer that is different from the first silicon-containing film layer, with the generated first plasma; and a second process that is performed after the first process and includes generating a second plasma from a second processing gas that contains bromine-containing gas, by using a second radio frequency power, to etch the laminated film with the generated second plasma. Unevenness is formed at an interface between the first silicon-containing film layer and the second silicon-containing film layer in the first process, and the unevenness is removed in the second process.

公开(公告)号：US20160314986A1

公开(公告)日：2016-10-27

申请号：US15131221

申请日：2016-04-18

Applicant: Tokyo Electron Limited

Inventor： Sho TOMINAGA ,  Wataru TAKAYAMA ,  Yoshiki IGARASHI

IPC: H01L21/311

CPC classification number: H01L21/31116

Abstract: An etching method includes generating a plasma from a hydrogen-containing gas and a fluorine-containing gas with high-frequency electric power for plasma generation. A first film including a silicon oxide film and a silicon nitride film is etched with the generated plasma in an environment at a temperature lower than or equal to −30° C. The first etch rate of first etching that etches the first film and the second etch rate of second etching that etches a second film having a structure different from the structure of the first film are controlled, so that the difference between the first etch rate and the second etch rate is within ±20% of the first etch rate.

Abstract translation: 蚀刻方法包括从具有用于等离子体产生的高频电力的含氢气体和含氟气体产生等离子体。 在低于或等于-30℃的环境中，用产生的等离子体蚀刻包括氧化硅膜和氮化硅膜的第一膜。蚀刻第一膜和第二膜的第一蚀刻的第一蚀刻速率 控制蚀刻具有与第一膜的结构不同的结构的第二膜的第二蚀刻的蚀刻速率，使得第一蚀刻速率和第二蚀刻速率之间的差在第一蚀刻速率的±20％以内。