公开(公告)号：US12168825B2

公开(公告)日：2024-12-17

申请号：US17594371

申请日：2020-04-06

Applicant: Tokyo Electron Limited

Inventor： Michitaka Aita ,  Ken Itabashi ,  Ryota Ifuku ,  Takaaki Kato ,  Kazuki Yamada

IPC: C23C16/48 ,  C23C16/40 ,  C23C16/455 ,  C23C16/52

Abstract: A film formation method includes: adsorbing a precursor of a film-forming raw material gas onto a surface of a substrate on which a film is to be formed by irradiating an interior of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bond of the raw material gas while supplying the raw material gas into the processing container in which the substrate is disposed; and forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.

公开(公告)号：US11625518B2

公开(公告)日：2023-04-11

申请号：US17274739

申请日：2019-08-29

Applicant: Tokyo Electron Limited

Inventor： Kosuke Yamamoto ,  Motoshi Fukudome ,  Ken Itabashi ,  Naoshige Fushimi ,  Kazuyoshi Matsuzaki

IPC: G06F30/27 ,  G06F119/18 ,  G06N3/02

Abstract: A learning device for performing a machine learning based on a learning model using data input to an input layer, includes: a calculation part configured to calculate a predetermined number of features, in which simulation data as a result of simulating semiconductor manufacturing processes by setting environmental information inside a process vessel in which the semiconductor manufacturing processes are performed and using a predetermined component provided in the process vessel as a variable, and XY coordinates parallel to a plane of a wafer are associated with each other; and an input part configured to input the calculated predetermined number of features to the input layer.

公开(公告)号：US10968515B2

公开(公告)日：2021-04-06

申请号：US16223327

申请日：2018-12-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiji Kikama ,  Hiromi Shima ,  Kyungseok Ko ,  Shingo Hishiya ,  Keisuke Suzuki ,  Tosihiko Jo ,  Ken Itabashi ,  Satoru Ogawa

IPC: C23C16/46 ,  H01L21/673 ,  H01L21/02 ,  C23C16/458 ,  C23C16/455 ,  C23C16/34 ,  H01L21/67

Abstract: There is provided a vertical heat treatment apparatus for forming a film by supplying a precursor gas to a plurality of substrates that are held in a substantially horizontal posture on a substrate holder with a predetermined interval in a vertical direction. The apparatus includes a processing container including an inner tube accommodating the substrate holder and an outer tube that is disposed outside the inner tube; and a gas nozzle that extends vertically along an inner peripheral surface of the inner tube and has a distal end that penetrates from an inside of the inner tube to an outside of the inner tube. A first gas hole for supplying the precursor gas to the inside of the inner tube and a second gas hole for supplying the precursor gas to the outside of the inner tube are formed on the gas nozzle.

公开(公告)号：US20190186014A1

公开(公告)日：2019-06-20

申请号：US16223327

申请日：2018-12-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiji Kikama ,  Hiromi Shima ,  Kyungseok Ko ,  Shingo Hishiya ,  Keisuke Suzuki ,  Tosihiko Jo ,  Ken Itabashi ,  Satoru Ogawa

IPC: C23C16/46 ,  H01L21/673 ,  H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/46 ,  C23C16/345 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/45578 ,  C23C16/4583 ,  H01L21/02126 ,  H01L21/6732

Abstract: There is provided a vertical heat treatment apparatus for forming a film by supplying a precursor gas to a plurality of substrates that are held in a substantially horizontal posture on a substrate holder with a predetermined interval in a vertical direction. The apparatus includes a processing container including an inner tube accommodating the substrate holder and an outer tube that is disposed outside the inner tube; and a gas nozzle that extends vertically along an inner peripheral surface of the inner tube and has a distal end that penetrates from an inside of the inner tube to an outside of the inner tube. A first gas hole for supplying the precursor gas to the inside of the inner tube and a second gas hole for supplying the precursor gas to the outside of the inner tube are formed on the gas nozzle.