公开(公告)号：US10121680B2

公开(公告)日：2018-11-06

申请号：US15831811

申请日：2017-12-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Munehito Kagaya ,  Ayuta Suzuki ,  Kosuke Yamamoto ,  Tsuyoshi Moriya ,  Kazuyoshi Matsuzaki

IPC: H01L21/67 ,  C23C16/455

Abstract: In a substrate processing apparatus, a mounting table and a gas supply part are provided in a processing container to face each other. The processing gas introduced from introduction ports formed in the gas supply part on the opposite side of the gas supply part from the mounting table is supplied to the substrate from gas supply holes formed in an end portion of the gas supply part on the side of the mounting table. The gas supply part includes a central region and one or more outer peripheral regions surrounding the central region. The gas supply holes and the introduction ports are provided for each of the central region and the outer peripheral regions. The processing gas whose gas supply conditions are adjusted for each of the regions is continuously and outwardly supplied in a circumferential direction around the center axis from the introduction ports.

公开(公告)号：US10734221B2

公开(公告)日：2020-08-04

申请号：US16028656

申请日：2018-07-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taiki Kato ,  Hisashi Higuchi ,  Kosuke Yamamoto ,  Ayuta Suzuki ,  Kazuyoshi Matsuzaki ,  Yuji Seshimo ,  Susumu Takada ,  Yoshihiro Takezawa

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/51 ,  H01L29/423 ,  C23C16/455 ,  C23C16/04 ,  C23C16/40 ,  H01L21/28 ,  H01L49/02 ,  H01L21/443

Abstract: A method of manufacturing a semiconductor device having a metal oxide film with workpiece accommodated in a chamber, includes: supplying a precursor gas containing a metal complex into the chamber to form a precursor layer on the workpiece from the precursor gas; supplying an oxidizing gas into the chamber to oxidize the precursor layer so that a metal oxide layer is formed, the oxidizing gas being a gas containing H2O or a gas having a functional group containing hydrogen atoms in the metal complex and containing an oxidant to generate H2O by reaction with the functional group; supplying an H2O removal gas containing alcohols or amines into the chamber to remove H2O adsorbed onto the metal oxide layer; and executing a plurality of cycles each including the supplying a precursor gas and the supplying an oxidizing gas. At least some of the cycles includes the supplying an H2O removal gas.

公开(公告)号：US20180155830A1

公开(公告)日：2018-06-07

申请号：US15833889

申请日：2017-12-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ayuta SUZUKI ,  Kosuke Yamamoto ,  Kazuyoshi Matsuzaki ,  Munehito Kagaya ,  Tsuyoshi Moriya ,  Tadashi Mitsunari

IPC: C23C16/44 ,  C23C16/455

CPC classification number: C23C16/4412 ,  C23C16/45508 ,  C23C16/45517 ,  C23C16/45561

Abstract: A gas supply and exhaust structure, for supplying and exhausting a raw material gas into and from a chamber having a substrate mounting surface at a position corresponding to a central portion of an inner top surface, includes a side gas supply unit having gas supply ports arranged circumferentially and vertically on an inner side surface of the chamber and configured to supply the raw material gas through the gas supply ports toward a central axis of the chamber, and an exhaust unit having a gas exhaust port formed at the central portion of the inner top surface of the chamber and configured to exhaust the raw material gas. The inner top surface has an inclined surface inclined such that a distance between the inner top surface and an inner bottom surface of the chamber becomes smaller from the inner side surface toward the central axis.

公开(公告)号：US11625518B2

公开(公告)日：2023-04-11

申请号：US17274739

申请日：2019-08-29

Applicant: Tokyo Electron Limited

Inventor： Kosuke Yamamoto ,  Motoshi Fukudome ,  Ken Itabashi ,  Naoshige Fushimi ,  Kazuyoshi Matsuzaki

IPC: G06F30/27 ,  G06F119/18 ,  G06N3/02

Abstract: A learning device for performing a machine learning based on a learning model using data input to an input layer, includes: a calculation part configured to calculate a predetermined number of features, in which simulation data as a result of simulating semiconductor manufacturing processes by setting environmental information inside a process vessel in which the semiconductor manufacturing processes are performed and using a predetermined component provided in the process vessel as a variable, and XY coordinates parallel to a plane of a wafer are associated with each other; and an input part configured to input the calculated predetermined number of features to the input layer.