公开(公告)号：US20210272826A1

公开(公告)日：2021-09-02

申请号：US17177270

申请日：2021-02-17

Applicant: Tokyo Electron Limited

Inventor： Kouichirou TANAKA ,  Masahiro FUKUDA

IPC: H01L21/67 ,  H01L21/673 ,  H01L21/687

Abstract: A development processing apparatus includes: a substrate holder that holds a substrate horizontally wherein the substrate includes a resist film; a rotator that rotates the substrate holder; first and second developer supplies that supply a developer to the substrate; and a liquid receiver that receives the developer from the substrate. The first developer supply is formed to have a length smaller than a diameter of the substrate. The second developer supply is formed to have a length equal to or larger than the diameter of the substrate. The liquid receiver includes first and second annular walls that are formed in an annular shape having a circular opening having a diameter larger than the diameter of the substrate. The first and second annular walls are movable up and down independently of each other, and a vertical distance between the first annular wall and the second annular wall is variable.

公开(公告)号：US20230026275A1

公开(公告)日：2023-01-26

申请号：US17959517

申请日：2022-10-04

Applicant: Tokyo Electron Limited

Inventor： Yusaku HASHIMOTO ,  Kouichirou TANAKA ,  Masahiro FUKUDA ,  Atsushi OOKOUCHI

IPC: G03F7/16

Abstract: A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.

公开(公告)号：US20210333707A1

公开(公告)日：2021-10-28

申请号：US17238541

申请日：2021-04-23

Applicant: Tokyo Electron Limited

Inventor： Takuya MIURA ,  Kouichirou TANAKA ,  Shogo TAKAHASHI ,  Yusuke MIYAKUBO ,  Kentaro YOSHIHARA

IPC: G03F7/00

Abstract: A nozzle unit for a liquid treatment apparatus that performs a liquid treatment on a substrate using a liquid, includes a first gas nozzle having a discharge flow path for allowing a first gas to flow through the discharge flow path and a first discharge port for discharging the first gas flowing through the discharge flow path toward a surface of the substrate, wherein the first discharge port is formed so as to extend in a first direction along the surface, and wherein a width of the discharge flow path in the first direction increases as the discharge flow path approaches the first discharge port, so that the first gas is discharged radially from the first discharge port.

公开(公告)号：US20170285481A1

公开(公告)日：2017-10-05

申请号：US15444671

申请日：2017-02-28

Applicant: Tokyo Electron Limited

Inventor： Yusaku HASHIMOTO ,  Takeshi SHIMOAOKI ,  Masahiro FUKUDA ,  Kouichirou TANAKA

IPC: G03F7/30 ,  H01L21/027 ,  G03F7/40

CPC classification number: G03F7/26 ,  B05D1/002 ,  B05D1/005 ,  G03F7/3021 ,  G03F7/3028 ,  G03F7/3092 ,  G03F7/32 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/6715

Abstract: A development method includes: a development step of supplying a developing solution to a surface of a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure, to perform development; a first rotation step of, after the development step, increasing revolution speed of the substrate to rotate the substrate in a first rotational direction around a central axis so as to spin off and remove part of the developing solution from the substrate; and a second rotation step of, after the first rotation step, rotating the substrate in a second rotational direction reverse to the first rotational direction so as to spin off and remove the developing solution remaining on the substrate from the substrate.

公开(公告)号：US20240361687A1

公开(公告)日：2024-10-31

申请号：US18769841

申请日：2024-07-11

Applicant: Tokyo Electron Limited

Inventor： Takuya MIURA ,  Kouichirou TANAKA ,  Shogo TAKAHASHI ,  Yusuke MIYAKUBO ,  Kentaro YOSHIHARA

IPC: G03F7/00

CPC classification number: G03F7/0025

Abstract: A nozzle unit for a liquid treatment apparatus that performs a liquid treatment on a substrate using a liquid, includes a first gas nozzle having a discharge flow path for allowing a first gas to flow through the discharge flow path and a first discharge port for discharging the first gas flowing through the discharge flow path toward a surface of the substrate, wherein the first discharge port is formed so as to extend in a first direction along the surface, and wherein a width of the discharge flow path in the first direction increases as the discharge flow path approaches the first discharge port, so that the first gas is discharged radially from the first discharge port.

公开(公告)号：US20220035248A1

公开(公告)日：2022-02-03

申请号：US17385387

申请日：2021-07-26

Applicant: Tokyo Electron Limited

Inventor： Yusaku HASHIMOTO ,  Kouichirou TANAKA ,  Masahiro FUKUDA ,  Atsushi OOKOUCHI

IPC: G03F7/16

Abstract: A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.

公开(公告)号：US20200064742A1

公开(公告)日：2020-02-27

申请号：US16466864

申请日：2017-12-15

Applicant: Tokyo Electron Limited

Inventor： Akiko KAI ,  Kousuke YOSHIHARA ,  Kouichirou TANAKA ,  Hiroshi ICHINOMIYA

IPC: G03F7/32 ,  H01L21/67 ,  H01L21/687

Abstract: A developing treatment method for performing a developing treatment on a resist film on a substrate, includes: a pattern forming step of forming a resist pattern by supplying a developing solution to the substrate and developing the resist film on the substrate; a coating step of coating the developed substrate with an aqueous solution of a water-soluble polymer; and a rinse step of cleaning the substrate by supplying a rinse solution to the substrate coated with the aqueous solution of the water-soluble polymer.

公开(公告)号：US20170102616A1

公开(公告)日：2017-04-13

申请号：US15262489

申请日：2016-09-12

Applicant: Tokyo Electron Limited

Inventor： Yusaku HASHIMOTO ,  Takeshi SHIMOAOKI ,  Masahiro FUKUDA ,  Kouichirou TANAKA

IPC: G03F7/30 ,  B05C11/08 ,  B05C5/02 ,  B05D1/00

CPC classification number: G03F7/3021 ,  B05C5/02 ,  B05C11/08 ,  B05D1/005 ,  H01L21/6715

Abstract: A substrate processing method includes steps of: supplying a developer onto a substrate surface from a discharge port while the substrate is rotated at a first rotation speed and a liquid contact surface faces the surface, and moving the nozzle while the liquid contact surface contacts with the developer so that a liquid film of the developer is formed on the surface; rotating the substrate at a second rotation speed slower than the first rotation speed, after the liquid film is formed, in a state where supply of the developer is stopped; rotating the substrate at a third rotation speed faster than the first rotation speed, after the substrate is rotated at the second rotation speed; and reducing rotation speed of the substrate to the second rotation speed or less, after the substrate is rotated at the third rotation speed, so that the liquid film is held on the surface.