公开(公告)号：US20220068670A1

公开(公告)日：2022-03-03

申请号：US17405431

申请日：2021-08-18

Applicant: Tokyo Electron Limited

Inventor： Akiko KAI

IPC: H01L21/67 ,  H01L21/687 ,  H01L51/00

Abstract: A substrate processing method includes supplying a processing liquid to a peripheral edge of a surface of a substrate to form a processing film on the peripheral edge of the surface of the substrate; and bringing a molding solvent supplied to an inner region than a region of the surface of the substrate to which the processing liquid is supplied, into contact with an interface of the processing liquid that faces a central side of the surface.

公开(公告)号：US20210134615A1

公开(公告)日：2021-05-06

申请号：US17083096

申请日：2020-10-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akiko KAI

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing method includes supplying a water-soluble polymer solution to a surface of a substrate having, on a surface of the substrate, a resist film on which no pattern is formed, after an immersion exposure process, hydrophilizing a surface of the resist film using the supplied water-soluble polymer solution, supplying, after the hydrophilizing, a cleaning liquid to the surface of the substrate while rotating the substrate to remove the water-soluble polymer solution that has not contributed to the hydrophilizing, and drying the substrate supplied with the cleaning liquid, wherein the water-soluble polymer solution has a pH value that allows an acid concentration in the resist film to fall within a permissible range.

公开(公告)号：US20210063885A1

公开(公告)日：2021-03-04

申请号：US16998231

申请日：2020-08-20

Applicant: Tokyo Electron Limited

Inventor： Akiko KAI ,  Hiroshi ICHINOMIYA

IPC: G03F7/30

Abstract: A developing treatment method for performing a developing treatment on a resist film on a substrate, includes: (A) supplying a developing solution to the substrate and developing the resist film to form a resist pattern; (B) supplying a water-based cleaning liquid to the developed substrate to clean the substrate with the water-based cleaning liquid; (C) applying an aqueous solution of a water-soluble polymer to the substrate cleaned with the water-based cleaning liquid to form a hydrophilic layer having a hydrophilic property on a surface of the substrate; and (D) cleaning the substrate on which the hydrophilic layer has been formed, with a rinse liquid, the (B) including: (a) accelerating a rotation speed of the substrate; and (b) after the (a), decelerating the rotation speed of the substrate until a start of the (C), wherein a deceleration in the (b) is lower than an acceleration in the (a).

公开(公告)号：US20200064742A1

公开(公告)日：2020-02-27

申请号：US16466864

申请日：2017-12-15

Applicant: Tokyo Electron Limited

Inventor： Akiko KAI ,  Kousuke YOSHIHARA ,  Kouichirou TANAKA ,  Hiroshi ICHINOMIYA

IPC: G03F7/32 ,  H01L21/67 ,  H01L21/687

Abstract: A developing treatment method for performing a developing treatment on a resist film on a substrate, includes: a pattern forming step of forming a resist pattern by supplying a developing solution to the substrate and developing the resist film on the substrate; a coating step of coating the developed substrate with an aqueous solution of a water-soluble polymer; and a rinse step of cleaning the substrate by supplying a rinse solution to the substrate coated with the aqueous solution of the water-soluble polymer.

公开(公告)号：US20180019112A1

公开(公告)日：2018-01-18

申请号：US15716663

申请日：2017-09-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akiko KAI ,  Takafumi NIWA ,  Shogo TAKAHASHI ,  Hiroshi NISHIHATA ,  Yuichi TERASHITA ,  Teruhiko KODAMA

IPC: H01L21/02 ,  H01L21/033 ,  G03F7/30 ,  H01L21/311 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/67051 ,  G03F7/3021 ,  H01L21/0206 ,  H01L21/0337 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/6708 ,  H01L21/68742

Abstract: A liquid processing apparatus for liquid-processing a substrate includes a substrate holding device that rotates a substrate in horizontal position, a nozzle holding device holding processing liquid and gas nozzles, the liquid nozzle discharging processing liquid from a discharge port such that the liquid is discharged obliquely to surface of the substrate, the gas nozzle discharging gas perpendicularly to the surface of the substrate, a moving device that moves the nozzle device with respect to the surface of the substrate, and a control device including circuitry that controls the nozzle, substrate and moving devices such that while the substrate is rotated, the liquid is discharged to peripheral portion toward downstream side in rotation direction and along tangential direction of the substrate and gas is discharged from the gas nozzle toward position adjacent to liquid landing position of the liquid on the surface and is on center side of the substrate.