公开(公告)号：US20240248413A1

公开(公告)日：2024-07-25

申请号：US18416087

申请日：2024-01-18

Applicant: Tokyo Electron Limited

Inventor： Takeshi SHIMOAOKI ,  Arnaud Alain Jean DAUENDORFFER ,  Keisuke YOSHIDA ,  Shinichiro KAWAKAMI ,  Yuya KAMEI ,  Soichiro OKADA ,  Takafumi NIWA

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  H01L21/033

CPC classification number: G03F7/706837 ,  G03F7/161 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/70008 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70866 ,  H01L21/0337 ,  G03F7/0042

Abstract: A substrate treatment method includes: developing a substrate which has a coating film of an inorganic resist formed on a base film thereon and has been subjected to an exposure treatment, with a developing solution to form a pattern of the inorganic resist; supplying an embedding solution to the developed substrate to fill a space between adjacent protrusions of the pattern; drying the filled embedding solution to form an embedded film on the substrate; and reducing a thickness of the embedded film by an ultraviolet ray.

公开(公告)号：US20170285481A1

公开(公告)日：2017-10-05

申请号：US15444671

申请日：2017-02-28

Applicant: Tokyo Electron Limited

Inventor： Yusaku HASHIMOTO ,  Takeshi SHIMOAOKI ,  Masahiro FUKUDA ,  Kouichirou TANAKA

IPC: G03F7/30 ,  H01L21/027 ,  G03F7/40

CPC classification number: G03F7/26 ,  B05D1/002 ,  B05D1/005 ,  G03F7/3021 ,  G03F7/3028 ,  G03F7/3092 ,  G03F7/32 ,  G03F7/40 ,  H01L21/0274 ,  H01L21/6715

Abstract: A development method includes: a development step of supplying a developing solution to a surface of a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure, to perform development; a first rotation step of, after the development step, increasing revolution speed of the substrate to rotate the substrate in a first rotational direction around a central axis so as to spin off and remove part of the developing solution from the substrate; and a second rotation step of, after the first rotation step, rotating the substrate in a second rotational direction reverse to the first rotational direction so as to spin off and remove the developing solution remaining on the substrate from the substrate.

公开(公告)号：US20180284652A1

公开(公告)日：2018-10-04

申请号：US15936818

申请日：2018-03-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takeshi SHIMOAOKI ,  Yusaku HASHIMOTO ,  Masahiro FUKUDA

IPC: H01L21/311

CPC classification number: G03G15/105 ,  G03G15/108

Abstract: A developing method includes: horizontally holding a substrate; disposing an opposing surface of a developer nozzle that faces a portion of a surface of the substrate, above one of central and peripheral portions of the surface; discharging a developer to form a liquid collection portion of the developer; spreading the liquid collection portion by moving the developer nozzle toward the other of the central and peripheral portions with the opposing surface brought into contact with the liquid collection portion; lifting the developer nozzle relative to the surface while stopping the discharge of the developer, and pulling up a portion of the liquid collection portion; stopping the lifting, and forming a pillar of the developer having a tapered upper end which is brought into contact with the opposing surface; and applying a shearing force to the pillar to shear the tapered upper end and separating the pillar from the opposing surface.

公开(公告)号：US20250005737A1

公开(公告)日：2025-01-02

申请号：US18292528

申请日：2022-07-06

Applicant: Tokyo Electron Limited

Inventor： Takeshi SHIMOAOKI ,  Hibiki NAKANO

IPC: G06T7/00 ,  G01L13/00 ,  G03F7/30 ,  G06T7/246 ,  H01L21/67

Abstract: A substrate processing apparatus includes a nozzle that ejects a processing liquid to a periphery of a substrate; a processing liquid supply path that allows the processing liquid to flow between a supply source of the processing liquid and the nozzle; an image capturing unit that captures an image of the periphery of the substrate; an observation unit that is installed in the processing liquid supply path and observes a flowing state of the processing liquid in the processing liquid supply path; and an analysis unit that specifies an abnormality factor related to a supply of the processing liquid to the substrate based on the image captured by the image capturing unit and an observation result obtained by the observation unit.

公开(公告)号：US20170102616A1

公开(公告)日：2017-04-13

申请号：US15262489

申请日：2016-09-12

Applicant: Tokyo Electron Limited

Inventor： Yusaku HASHIMOTO ,  Takeshi SHIMOAOKI ,  Masahiro FUKUDA ,  Kouichirou TANAKA

IPC: G03F7/30 ,  B05C11/08 ,  B05C5/02 ,  B05D1/00

CPC classification number: G03F7/3021 ,  B05C5/02 ,  B05C11/08 ,  B05D1/005 ,  H01L21/6715

Abstract: A substrate processing method includes steps of: supplying a developer onto a substrate surface from a discharge port while the substrate is rotated at a first rotation speed and a liquid contact surface faces the surface, and moving the nozzle while the liquid contact surface contacts with the developer so that a liquid film of the developer is formed on the surface; rotating the substrate at a second rotation speed slower than the first rotation speed, after the liquid film is formed, in a state where supply of the developer is stopped; rotating the substrate at a third rotation speed faster than the first rotation speed, after the substrate is rotated at the second rotation speed; and reducing rotation speed of the substrate to the second rotation speed or less, after the substrate is rotated at the third rotation speed, so that the liquid film is held on the surface.

公开(公告)号：US20250105029A1

公开(公告)日：2025-03-27

申请号：US18725771

申请日：2022-12-26

Applicant: Tokyo Electron Limited

Inventor： Takahiro TAKUMI ,  Takeshi SHIMOAOKI

IPC: H01L21/67

Abstract: A liquid processing method includes: a substrate processing process for allowing a processing liquid to flow through a flow path connecting a reservoir and a processing liquid supply, and be discharged to a substrate from the processing liquid supply, thereby processing the substrate; a stay process for filling the flow path with a liquid and keeping the liquid stay in the flow path; a flow-through process for allowing the staying liquid to flow through the flow path; a signal acquisition process for irradiating the flow path with a light by a light irradiator and receiving the light from the flow path by the light receiver, to acquire a detection signal output from the light receiver according to a foreign substance in the liquid; and a response process for estimating an abnormal location in the flow path based on the detection signal, and presenting or executing a response operation.

公开(公告)号：US20160070171A1

公开(公告)日：2016-03-10

申请号：US14845827

申请日：2015-09-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichi TERASHITA ,  Hirofumi TAKEGUCHI ,  Takeshi SHIMOAOKI ,  Kousuke YOSHIHARA ,  Tomohiro ISEKI

IPC: G03F7/16

CPC classification number: G03F7/3021 ,  H01L21/6715

Abstract: A developing method includes: forming a puddle of a developer on a surface of the substrate held by the substrate holding unit by a first developer nozzle; subsequently spreading the puddle of the developer over the whole substrate surface, by moving the first developer nozzle discharging the developer from a central or peripheral part to the peripheral or central part of the rotating substrate, with a contacting part of the first developer nozzle contacting with the puddle; supplying the developer from a second developer nozzle onto the rotating substrate, thereby to uniformize, in the substrate plane, distribution of a degree of progress of development by the developer spreading step; and removing the developer between the developer spreading step and the developer supplying step to remove the developer on the substrate.

Abstract translation: 显影方法包括：通过第一显影剂喷嘴在由基板保持单元保持的基板的表面上形成显影剂的水坑; 随后将显影剂从中央或周边部分排出到第一显影剂喷嘴的周边或中心部分的第一显影剂喷嘴与第一显影剂喷嘴的接触部分接触 水坑 将显影剂从第二显影剂喷嘴供应到旋转基板上，从而在基板平面中均匀化通过显影剂扩展步骤的显影进展程度的分布; 并且在显影剂扩散步骤和显影剂供应步骤之间移除显影剂以除去基板上的显影剂。