公开(公告)号：US20220316059A1

公开(公告)日：2022-10-06

申请号：US17628682

申请日：2020-07-13

Applicant: Tokyo Electron Limited

Inventor： Koukichi HIROSHIRO ,  Makoto MURAMATSU ,  Koji KAGAWA ,  Kenji SEKIGUCHI

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46

Abstract: A substrate processing method includes a protective film forming step, an insulating material depositing step, a protective film removing step, and a metal material depositing step. In the protective film forming step, a protective film is formed on a metal film among the metal film and an insulating film exposed on the surface of a substrate, using a film-forming material that is selectively adsorbed onto the metal film. In the insulating material depositing step, after the protective film forming step, an insulating material is deposited on the surface of the insulating film using an atomic layer deposition method. In the protective film removing step, the protective film is removed from the surface of the metal film after the insulating material depositing step. In the metal material depositing step, a metal material is deposited on the metal film after the protective film removing step.

公开(公告)号：US20220403509A1

公开(公告)日：2022-12-22

申请号：US17350125

申请日：2021-06-17

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Yoji IIZUKA ,  Mitsuaki IWASHITA ,  Antonio ROTONDARO ,  Dipak ARYAL ,  Takeo NAKANO ,  Ryuichi ASAKO ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Naoki UMESHITA ,  Takashi HAYAKAWA

IPC: C23C16/44 ,  C23C16/26 ,  C23C16/455 ,  C23C16/50

Abstract: According to one aspect of the present disclosure, a vacuum processing apparatus includes: a decompressable process container; a supply port that is formed on a side wall of the process container and that is configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container.

公开(公告)号：US20130145643A1

公开(公告)日：2013-06-13

申请号：US13693712

申请日：2012-12-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takehiko ORII ,  Kenji SEKIGUCHI ,  Noritaka UCHIDA ,  Satoru TANAKA ,  Hiroki OHNO

IPC: F26B5/00

CPC classification number: F26B5/005 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6708

Abstract: A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.

Abstract translation: 根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。 处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。 设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。 设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心 衬底比流体喷嘴。

公开(公告)号：US20240420970A1

公开(公告)日：2024-12-19

申请号：US18703525

申请日：2022-10-25

Applicant: Tokyo Electron Limited ,  Tokyo University of Science Foundation

Inventor： Takao OKABE ,  Hirokazu UEDA ,  Naoki UMESHITA ,  Mitsuaki IWASHITA ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Tamotsu MORIMOTO ,  Toshikazu AKIMOTO

IPC: H01L21/67

Abstract: A liquid circulation system according to an aspect of the present disclosure is for recovering an ionic liquid supplied into a vacuum chamber and returning the recovered ionic liquid back again into the vacuum chamber, and includes a storage tank having an opening communicating with an inside of the vacuum chamber and configured to store the ionic liquid recovered from the inside of the vacuum chamber through the opening, a viscosity pump provided below the storage tank in a vertical direction, and a pipe configured to supply the ionic liquid inside the storage tank into the vacuum chamber.

公开(公告)号：US20240087916A1

公开(公告)日：2024-03-14

申请号：US18499667

申请日：2023-11-01

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Yoji IIZUKA ,  Mitsuaki IWASHITA ,  Antonio ROTONDARO ,  Dipak ARYAL ,  Takeo NAKANO ,  Ryuichi ASAKO ,  Kenji SEKIGUCHI ,  Koji AKIYAMA ,  Naoki UMESHITA ,  Takashi HAYAKAWA

IPC: H01L21/67 ,  C23C16/26 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01L21/67051 ,  C23C16/26 ,  C23C16/4412 ,  C23C16/45587 ,  C23C16/50 ,  H01L21/6704

Abstract: A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

公开(公告)号：US20230063907A1

公开(公告)日：2023-03-02

申请号：US18048102

申请日：2022-10-20

Applicant: Tokyo Electron Limited

Inventor： Kyoko IKEDA ,  Kazuya DOBASHI ,  Tsunenaga NAKASHIMA ,  Kenji SEKIGUCHI ,  Shuuichi NISHIKIDO ,  Masato NAKAJO ,  Takahiro YASUTAKE

IPC: B08B5/02

Abstract: A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

公开(公告)号：US20240128307A1

公开(公告)日：2024-04-18

申请号：US18275908

申请日：2022-01-31

Applicant: Tokyo Electron Limited

Inventor： Rintaro HIGUCHI ,  Mitsunori NAKAMORI ,  Koji KAGAWA ,  Kenji SEKIGUCHI ,  Hajime NAKABAYASHI ,  Syuhei YONEZAWA

IPC: H01G4/08 ,  C23C16/34 ,  C23C16/40 ,  C23C16/56

CPC classification number: H01L28/40 ,  C23C16/34 ,  C23C16/403 ,  C23C16/405 ,  C23C16/56

Abstract: A substrate processing method includes: (A) preparing a substrate, on which a high-dielectric film having a higher permittivity than a SiO2 film is formed; (B) supplying, to the substrate, a metal solution containing a second metal element having a higher electronegativity or a lower valence than a first metal element contained in the high-dielectric film; and (C) forming a doping layer, in which the first metal element is substituted with the second metal element, on a surface of the high-dielectric film.

公开(公告)号：US20230223251A1

公开(公告)日：2023-07-13

申请号：US17997158

申请日：2021-04-20

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Mitsuaki IWASHITA ,  Naoki UMESHITA ,  Yoji IIZUKA ,  Takashi HAYAKAWA ,  Kenji SEKIGUCHI ,  Koji AKIYAMA

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/285

CPC classification number: H01L21/02307 ,  H01L21/6715 ,  H01L21/28556 ,  H01L21/0228

Abstract: In a method of manufacturing a semiconductor device, the method includes: applying a liquid material containing an ionic liquid on a substrate to form a protective film; transferring at an atmosphere the substrate on which the protective film is formed; and removing the protective film from the substrate that has been transferred at the atmosphere.

公开(公告)号：US20220068642A1

公开(公告)日：2022-03-03

申请号：US17411089

申请日：2021-08-25

Applicant: Tokyo Electron Limited

Inventor： Koji KAGAWA ,  Kenji SEKIGUCHI ,  Syuhei YONEZAWA ,  Daisuke SUZUKI ,  Yoshihiro TAKEZAWA ,  Yoshihisa MATSUBARA

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/324

Abstract: A substrate processing method for crystallizing and expanding a silicon film by a thermal treatment, the method including: a holding process including holding, before executing the thermal treatment, a substrate on which the silicon film is formed; and an adhesion process including supplying, to the substrate that is held in the holding process, a solution containing metal to cause the metal to adhere to a surface of the silicon film with an adhesion amount within a range equal to or more than 1.0E10 [atoms/cm2] and equal to or less than 1.0E20 [atoms/cm2].

公开(公告)号：US20250149355A1

公开(公告)日：2025-05-08

申请号：US18833079

申请日：2022-01-27

Applicant: Tokyo Electron Limited

Inventor： Susumu HAYAKAWA ,  Junichi KITANO ,  Kenji SEKIGUCHI ,  Syuhei YONEZAWA ,  Yoshihiro KONDO

IPC: H01L21/67 ,  H01L21/677

Abstract: A substrate processing apparatus includes a substrate cleaning device; a chip cleaning device; a chip bonding device; a transfer section; a first substrate transfer arm; and a first frame transfer arm. The substrate cleaning device is configured to clean a substrate. The chip cleaning device is configured to clean chips in a state where the chips are attached to a frame via a tape. The chip bonding device is configured to bond the chips to the substrate. The first substrate transfer arm is configured to hold and transfer the substrate. The first frame transfer arm is configured to hold and transfer the frame together with the chips. The first substrate transfer arm transfers the substrate from the substrate cleaning device to the chip bonding device, and the first frame transfer arm transfers the chips together with the frame from the chip cleaning device to the chip bonding device.