公开(公告)号：US20170314130A1

公开(公告)日：2017-11-02

申请号：US15520820

申请日：2015-09-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Katsuhito HIROSE ,  Kunihiro TADA ,  Kenji SUZUKI ,  Takeshi SHINOHARA

IPC: C23C16/455

Abstract: A film deposition device includes a reaction gas supply part which is in communication with a process space defined between a placement part and a ceiling part. An annular gap in a plan view exists between an outer peripheral portion of the placement part and an outer peripheral portion of the ceiling part in circumferential directions of the placement part and the ceiling part. A reaction gas supplied from the reaction gas supply part into the process space via the ceiling part flows outside of the process space via the annular gap. A plurality of gas flow channels, which is used for forming gas-flow walls, is formed in the outer peripheral portion of the ceiling part which provides the annular gap.

公开(公告)号：US20240290609A1

公开(公告)日：2024-08-29

申请号：US18572959

申请日：2022-06-08

Applicant: Tokyo Electron Limited

Inventor： Tadahiro ISHIZAKA ,  Kunihiro TADA ,  Takashi SAKUMA ,  Yoshiyuki HANADA

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/04 ,  C23C16/08 ,  C23C16/42 ,  C23C16/50 ,  H01J37/32 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/02068 ,  C23C16/0227 ,  C23C16/045 ,  C23C16/08 ,  C23C16/42 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32733 ,  H01J37/32816 ,  H01J37/32899 ,  H01L21/28518 ,  H01L21/76877 ,  H01J2237/3321

Abstract: A substrate processing method includes: a first oxide film removal process of supplying a first processing gas to a substrate, which includes a first metal film and a silicon-containing film, to remove a metal oxide film on a surface of the first metal film; a silicide formation process of supplying a second processing gas to the substrate to for a silicide on a surface of the silicon-containing film; and a film formation process of supplying a film formation gas to the substrate to deposit a second metal film on the first metal film and the silicide, after the first oxide removal process and the silicide formation process.

公开(公告)号：US20240337022A1

公开(公告)日：2024-10-10

申请号：US18624402

申请日：2024-04-02

Applicant: Tokyo Electron Limited

Inventor： Kensaku NARUSHIMA ,  Takashi KOBAYASHI ,  Shinya OKABE ,  Takashi SAKUMA ,  Kunihiro TADA ,  Satoshi YOSHIDA

IPC: C23C16/509 ,  C23C16/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46

CPC classification number: C23C16/509 ,  C23C16/14 ,  C23C16/4405 ,  C23C16/4408 ,  C23C16/45512 ,  C23C16/46

Abstract: A film forming apparatus, including a processing container, an interior of which is configured to be depressurized, an electrode configured to generate an electric field in a processing space inside the processing container, a radio frequency power supply configured to supply radio frequency power to the electrode, a stage arranged in the processing container to place a substrate thereon, and a film forming gas introduction part configured to introduce vaporized zirconium chloride into the processing space. The film forming gas introduction part is made of a metal and is grounded.