公开(公告)号：US11562889B2

公开(公告)日：2023-01-24

申请号：US17105938

申请日：2020-11-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mayo Uda ,  Manabu Tsuruta ,  Keigo Toyoda

IPC: H01J37/32 ,  H01J37/20

Abstract: A plasma processing apparatus includes a chamber having a sidewall and a plasma processing space surrounded by the sidewall, and a first side gas inlet line and a second side gas inlet line configured to introduce at least one gas from the sidewall into the plasma processing space. The first side gas inlet line includes a plurality of first side gas injectors symmetrically arranged along a circumferential direction on the sidewall and configured to introduce the gas in a first direction into the plasma processing space. Further, the second side gas inlet line includes a plurality of second side gas injectors symmetrically arranged along the circumferential direction on the sidewall and configured to introduce the gas in a second direction different from the first direction into the plasma processing space.

公开(公告)号：US10510514B2

公开(公告)日：2019-12-17

申请号：US15508054

申请日：2015-09-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuki Hosaka ,  Yoshihiro Umezawa ,  Mayo Uda ,  Takashi Kubo

IPC: F16K3/08 ,  H01J37/32 ,  H01L21/3065 ,  C23C16/455 ,  F16K31/04 ,  H01L21/67

Abstract: According to an aspect, a gas supply mechanism for supplying a gas to a semiconductor manufacturing apparatus is provided. The gas supply mechanism includes a pipe connecting a gas source and the semiconductor manufacturing apparatus to each other, and a valve which is provided on the pipe. The valve includes a plate rotatable about an axis, the axis extending in a plate thickness direction, and a housing provided along the plate without contacting the plate to accommodate the plate, the housing providing a gas supply path along with the pipe. A through hole is formed in the plate, the through hole penetrating the plate at a position on a circle which extends around the axis and intersects the gas supply path.

公开(公告)号：US20230021588A1

公开(公告)日：2023-01-26

申请号：US17949925

申请日：2022-09-21

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMAZAWA ,  Takehisa Saito ,  Mayo Uda ,  Keigo Toyoda ,  Alok Ranjan ,  Toshiki Nakajima

IPC: H05H1/46 ,  H01L21/67 ,  H01J37/32

Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.

公开(公告)号：US11348768B2

公开(公告)日：2022-05-31

申请号：US16868849

申请日：2020-05-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuki Hosaka ,  Yoshihiro Umezawa ,  Toshiki Nakajima ,  Mayo Uda

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50

Abstract: A plasma processing apparatus includes a processing container; a placement table provided in the processing container and including a placement region on which a workpiece is placed for a plasma processing; a baffle structure that defines a first space and a second space, and including a first member and at least one second member; a gas supply portion connected to the first space; a first pressure gauge connected to the first space; an exhaust apparatus connected to the second space; a second pressure gauge connected to the second space; a driving mechanism that moves the at least one second member in a vertical direction; a displacement gauge configured to measure a position or a distance of the second member; and a controller that controls the driving mechanism. The controller controls the driving mechanism such that a pressure of the first space becomes a predetermined pressure designated by a recipe.

公开(公告)号：US11832373B2

公开(公告)日：2023-11-28

申请号：US17949925

申请日：2022-09-21

Applicant: Tokyo Electron Limited

Inventor： Yohei Yamazawa ,  Takehisa Saito ,  Mayo Uda ,  Keigo Toyoda ,  Alok Ranjan ,  Toshiki Nakajima

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/67

CPC classification number: H05H1/46 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32495 ,  H01L21/67069 ,  H05H1/4652

Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.

公开(公告)号：US11470712B2

公开(公告)日：2022-10-11

申请号：US16144714

申请日：2018-09-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei Yamazawa ,  Takehisa Saito ,  Mayo Uda ,  Keigo Toyoda ,  Alok Ranjan ,  Toshiki Nakajima

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.

公开(公告)号：US10950467B2

公开(公告)日：2021-03-16

申请号：US15484389

申请日：2017-04-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuki Hosaka ,  Yoshihiro Umezawa ,  Toshiki Nakajima ,  Mayo Uda ,  Kenichi Shimono

IPC: H01L21/67 ,  F16K5/04 ,  H01J37/32 ,  F16K31/08

Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.