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公开(公告)号：US11101114B2
公开(公告)日：2021-08-24
申请号：US15312225
申请日：2015-06-05
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yuki Hosaka , Yoshihiro Umezawa , Toshiki Nakajima
IPC: H01J37/32 , H01L21/67 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/311
Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
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公开(公告)号：US20230021588A1
公开(公告)日：2023-01-26
申请号：US17949925
申请日：2022-09-21
Applicant: Tokyo Electron Limited
Inventor： Yohei YAMAZAWA , Takehisa Saito , Mayo Uda , Keigo Toyoda , Alok Ranjan , Toshiki Nakajima
Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.
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公开(公告)号：US11348768B2
公开(公告)日：2022-05-31
申请号：US16868849
申请日：2020-05-07
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yuki Hosaka , Yoshihiro Umezawa , Toshiki Nakajima , Mayo Uda
IPC: H01J37/32 , C23C16/44 , C23C16/455 , C23C16/50
Abstract: A plasma processing apparatus includes a processing container; a placement table provided in the processing container and including a placement region on which a workpiece is placed for a plasma processing; a baffle structure that defines a first space and a second space, and including a first member and at least one second member; a gas supply portion connected to the first space; a first pressure gauge connected to the first space; an exhaust apparatus connected to the second space; a second pressure gauge connected to the second space; a driving mechanism that moves the at least one second member in a vertical direction; a displacement gauge configured to measure a position or a distance of the second member; and a controller that controls the driving mechanism. The controller controls the driving mechanism such that a pressure of the first space becomes a predetermined pressure designated by a recipe.
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4.发明申请公开(公告)号：US20170301579A1
公开(公告)日：2017-10-19
申请号：US15509522
申请日：2015-09-24
Applicant: Tokyo Electron Limited
Inventor： Yuki Hosaka , Yoshihiro Umezawa , Toshiki Nakajima , Koichi Nagakura
IPC: H01L21/687 , H01L21/67 , H01L21/311
CPC classification number: H01L21/68764 , H01L21/31116 , H01L21/67103 , H01L21/67109 , H01L21/67242 , H01L21/68742
Abstract: A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.
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Patent Agency Ranking
公开(公告)号：US11832373B2
公开(公告)日：2023-11-28
申请号：US17949925
申请日：2022-09-21
Applicant: Tokyo Electron Limited
Inventor： Yohei Yamazawa , Takehisa Saito , Mayo Uda , Keigo Toyoda , Alok Ranjan , Toshiki Nakajima
CPC classification number: H05H1/46 , H01J37/3211 , H01J37/3244 , H01J37/32495 , H01L21/67069 , H05H1/4652
Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.
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公开(公告)号：US11804366B2
公开(公告)日：2023-10-31
申请号：US17402398
申请日：2021-08-13
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yuki Hosaka , Yoshihiro Umezawa , Toshiki Nakajima
IPC: H01J37/32 , H01L21/67 , C23C16/44 , C23C16/455 , H01L21/02 , H01L21/311
CPC classification number: H01J37/32633 , C23C16/4412 , C23C16/45587 , C23C16/45589 , C23C16/45591 , H01J37/32449 , H01J37/32715 , H01J37/32834 , H01L21/02274 , H01L21/31116 , H01L21/6719 , H01L21/67069 , H01J2237/334
Abstract: A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.
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公开(公告)号：US11470712B2
公开(公告)日：2022-10-11
申请号：US16144714
申请日：2018-09-27
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yohei Yamazawa , Takehisa Saito , Mayo Uda , Keigo Toyoda , Alok Ranjan , Toshiki Nakajima
Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.
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公开(公告)号：US10950467B2
公开(公告)日：2021-03-16
申请号：US15484389
申请日：2017-04-11
Applicant: TOKYO ELECTRON LIMITED
Inventor： Yuki Hosaka , Yoshihiro Umezawa , Toshiki Nakajima , Mayo Uda , Kenichi Shimono
Abstract: The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.
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公开(公告)号：US10192774B2
公开(公告)日：2019-01-29
申请号：US15509522
申请日：2015-09-24
Applicant: Tokyo Electron Limited
Inventor： Yuki Hosaka , Yoshihiro Umezawa , Toshiki Nakajima , Koichi Nagakura
IPC: H01L21/687 , H01L21/311 , H01L21/67
Abstract: A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.
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