公开(公告)号：US20230215700A1

公开(公告)日：2023-07-06

申请号：US18121611

申请日：2023-03-15

申请人： Tokyo Electron Limited

发明人： Kae KUMAGAI ,  Motoi TAKAHASHI ,  Ryutaro SUDA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Takatoshi ORUI

IPC分类号： H01J37/32 ,  H01L21/02

CPC分类号： H01J37/32449 ,  H01J37/32715 ,  H01J37/32798 ,  H01L21/02164 ,  H01L21/0217 ,  H01J37/32082 ,  H01J37/32458 ,  H01J2237/334

摘要： A substrate processing method includes placing a substrate with a dielectric film on a substrate support in a chamber, and etching the dielectric film with plasm generated from a reaction gas containing an HF gas and at least one CxHyFz gas selected from the group consisting of a C4H2F6 gas, a C4H2F8 gas, a C3H2F4 gas, and a C3H2F6 gas. The etching includes setting the substrate support at a temperature of 0° C. or lower and setting the HF gas to a flow rate greater than a flow rate of the CxHyFz gas.

公开(公告)号：US20230223249A1

公开(公告)日：2023-07-13

申请号：US18121621

申请日：2023-03-15

申请人： Tokyo Electron Limited

发明人： Motoi TAKAHASHI ,  Ryutaro SUDA ,  Maju TOMURA ,  Takatoshi ORUI ,  Yoshihide KIHARA

IPC分类号： H01L21/02 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  C23C16/34 ,  C23C16/52

CPC分类号： H01L21/02274 ,  H01L21/3065 ,  H01J37/32449 ,  H01L21/67069 ,  H01L21/02131 ,  C23C16/345 ,  C23C16/52

摘要： A substrate processing method includes providing a substrate with a silicon-containing film in a chamber, supplying a process gas containing an HF gas, a phosphorus halide gas, and at least one gas selected from the group consisting of a C4H2F6 gas, a C4H2F8 gas, a C3H2F4 gas, and a C3H2F6 gas into the chamber to generate plasma, and etching the silicon-containing film in the substrate.