公开(公告)号：US20230115637A1

公开(公告)日：2023-04-13

申请号：US17759638

申请日：2021-01-27

Applicant: Tokyo Electron Limited

Inventor： Naoshige FUSHIMI ,  Hidefumi MATSUI

IPC: G01K13/02 ,  G06F30/10

Abstract: Provided are a process estimation system and a process data estimation method for appropriately estimating process data, and a program. The process estimation system includes: an input part configured to input actual sensor data detected by a sensor of a substrate processing apparatus; a virtual sensor data generation part configured to generate virtual sensor data for a virtual sensor based on the actual sensor data and a physical model; and a process data estimation part configured to estimate process data based on the virtual sensor data.

公开(公告)号：US20230416920A1

公开(公告)日：2023-12-28

申请号：US18210409

申请日：2023-06-15

Applicant: Tokyo Electron Limited

Inventor： Tatsuya YAMAGUCHI ,  Yutaka SASAKI ,  Makoto TAKAHASHI ,  Toru ISHII ,  Naoshige FUSHIMI ,  Koji YOSHII

IPC: C23C16/46 ,  C23C16/458 ,  C23C16/52 ,  C23C16/56 ,  C23C16/34 ,  C23C16/455

CPC classification number: C23C16/466 ,  C23C16/4584 ,  C23C16/52 ,  C23C16/56 ,  C23C16/345 ,  C23C16/45544 ,  H01L21/0217

Abstract: A substrate processing apparatus includes: a processing container that accommodates a substrate; a processing gas supply that supplies a processing gas into the processing container; an exhaust that exhausts an inside of the processing container; a heater that heats the processing container; and a cooling gas injector that injects a cooling gas for cooling the substrate.

公开(公告)号：US20200294799A1

公开(公告)日：2020-09-17

申请号：US16818491

申请日：2020-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tetsuya SAITOU ,  Takashi KAMIO ,  Kazuyoshi YAMAZAKI ,  Naoshige FUSHIMI

IPC: H01L21/02 ,  H01L21/67

Abstract: An apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; a gas supply mechanism for supplying a processing gas into the processing container; and at least three ultraviolet light sources provided to irradiate the processing gas inside the processing container with ultraviolet rays. The ultraviolet light sources are provided to be offset from a rotation axis of the stage in a plan view, and are arranged in a light source arrangement direction with distances from the ultraviolet light sources to the rotation axis being different from one another. The ultraviolet light sources include first to third ultraviolet light source. The third ultraviolet light source is arranged such that distances L1, L2, and L3 from the first to third ultraviolet light sources, respectively, to the rotation axis in a plan view satisfies a relationship of L1

公开(公告)号：US20160045942A1

公开(公告)日：2016-02-18

申请号：US14828080

申请日：2015-08-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kenichi HARA ,  Naoshige FUSHIMI

IPC: B08B6/00

CPC classification number: H01J37/3053 ,  H01J37/3007 ,  H01J2237/12 ,  H01J2237/30477 ,  H01L21/02071 ,  H01L43/12

Abstract: A method of removing a residue layer formed on a side surface of each of a plurality of convex-shaped structure which stands together on a surface of a substrate or a side surface of a concave-shaped structure formed on the substrate, includes disposing an electrostatic lens between the substrate and a charged particle irradiation mechanism which linearly irradiates a beam of charged particles onto the substrate. The electrostatic lens diverges the beam of charged particles.

Abstract translation: 在基板的表面或形成在基板上的凹状结构的侧面的多个凸状结构体的一侧的侧面上形成的残留层的除去方法包括： 基板和带电粒子照射机构之间的透镜，其将带电粒子束线性地照射到基板上。 静电透镜使带电粒子束发散。