公开(公告)号：US20240321562A1

公开(公告)日：2024-09-26

申请号：US18680297

申请日：2024-05-31

Applicant: Tokyo Electron Limited

Inventor： Koki MUKAIYAMA ,  Maju TOMURA ,  Yoshihide KIHARA ,  Nobuyuki FUKUI

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J37/32119 ,  H01J37/32174 ,  H01J37/32935 ,  H01J2237/3341 ,  H01J2237/3346

Abstract: A plasma processing method includes: (a) providing a substrate on a substrate support in a chamber; (b) supplying a coolant to control a temperature of the substrate support; (c) supplying a processing gas into the chamber; and (d) in a state where (b) is being performed, generating plasma from the processing gas in the chamber by a source RF signal, and supplying a bias signal to etch the carbon-containing film. In (d), the coolant of (b) is set such that the substrate or the substrate support reaches a target temperature of −70° C. to 100° C. during plasma etching, the source RF signal in (d) is an RF signal having a power of 2 kW or more, and the bias signal in (d) is a bias RF signal having a power of 2 kW or more or a bias DC signal including a voltage pulse of 2 kV or more.

公开(公告)号：US20240038494A1

公开(公告)日：2024-02-01

申请号：US18023890

申请日：2021-08-27

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Ryutaro SUDA ,  Nobuyuki FUKUI

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32935 ,  H01J2237/334

Abstract: An etching method includes: steps a), b), c), and d). Step a) provides a substrate having an underlying layer and an etching target film formed on the underlying layer, on a stage. Step b) generates plasma from a processing gas. Step c) supplies a bias power having a first frequency to the stage to etch the etching target film, thereby forming a recess. Step d) changes a frequency of the bias power to a second frequency different from the first frequency according to an aspect ratio of the recess after step c), to further etch the etching target film. After a generation of the plasma, the etching target film is continuously etched during a time period until the underlying layer is exposed.

公开(公告)号：US20240006152A1

公开(公告)日：2024-01-04

申请号：US18368110

申请日：2023-09-14

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Nobuyuki FUKUI ,  Yoshihide KIHARA

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/033

CPC classification number: H01J37/32174 ,  H01J37/32155 ,  H01L21/31144 ,  H01L21/0332 ,  H01J2237/3341 ,  H01J37/32027

Abstract: A method for etching a substrate includes: (a) providing a substrate processing apparatus including a processing chamber that forms a processing space, a substrate support provided inside the processing chamber to hold a substrate, and a power supply that supplies a bias power to at least the substrate support; (b) providing the substrate on the substrate support, the substrate including an underlying layer and an organic material layer on the underlying layer; (c) generating plasma in the processing chamber; and (d) repeating a predetermined cycle including an ON time during which the bias power is supplied to the substrate support and an OFF time during which the bias power is not supplied to the substrate support. The OFF time is 10 msec or longer.