公开(公告)号：US10978278B2

公开(公告)日：2021-04-13

申请号：US16051082

申请日：2018-07-31

Applicant: Tokyo Electron Limited

Inventor： Ching Ling Meng ,  Holger Tuitje ,  Qiang Zhao ,  Hanyou Chu ,  Xinkang Tian

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/66

Abstract: An apparatus, a system, and a method for in-situ etching monitoring in a plasma processing chamber are provided. The apparatus includes a continuous wave broadband light source to generate incident light beam, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector, and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property of the substrate or structures formed thereupon based on reference light beam and the reflected light beam that are processed to suppress the background light, and control an etch process based on the determined property.

公开(公告)号：US10916472B2

公开(公告)日：2021-02-09

申请号：US16356365

申请日：2019-03-18

Applicant: Tokyo Electron Limited

Inventor： Robert Clark ,  Jeffrey Smith ,  Kandabara Tapily ,  Angelique Raley ,  Qiang Zhao

IPC: H01L21/66 ,  H01L21/768 ,  H01L21/67 ,  H01L21/677 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311 ,  G05B13/02 ,  G05B19/418 ,  C23C14/24 ,  C23C14/34 ,  H01J37/32

Abstract: This disclosure relates to a high volume manufacturing system for processing and measuring workpieces in a semiconductor processing sequence without leaving the system's controlled environment (e.g., sub-atmospheric pressure). The system includes an active interdiction control system to implement corrective processing within the system when a non-conformity is detected. The corrective processing can include a remedial process sequence to correct the non-conformity or compensate for the non-conformity during subsequent process. The non-conformity may be associated with fabrication measurement data, process parameter data, and/or platform performance data.

公开(公告)号：US20200083074A1

公开(公告)日：2020-03-12

申请号：US16356372

申请日：2019-03-18

Applicant: Tokyo Electron Limited

Inventor： Robert Clark ,  Jeffrey Smith ,  Kandabara Tapily ,  Angelique Raley ,  Qiang Zhao

IPC: H01L21/67 ,  G05B19/418

Abstract: This disclosure relates to a method for using a high volume manufacturing system for processing and measuring workpieces in a semiconductor processing sequence without leaving the system's controlled environment (e.g., sub-atmospheric pressure). The system includes an active interdiction control system to implement corrective processing within the system when a non-conformity is detected. The corrective processing method can include a remedial process sequence to correct the non-conformity or compensate for the non-conformity during subsequent process. The non-conformity may be associated with fabrication measurement data, process parameter data, and/or platform performance data.

公开(公告)号：US20200081423A1

公开(公告)日：2020-03-12

申请号：US16356365

申请日：2019-03-18

Applicant: Tokyo Electron Limited

Inventor： Robert Clark ,  Jeffrey Smith ,  Kandabara Tapily ,  Angelique Raley ,  Qiang Zhao

IPC: G05B19/418 ,  H01L21/67 ,  G05B13/02

Abstract: This disclosure relates to a high volume manufacturing system for processing and measuring workpieces in a semiconductor processing sequence without leaving the system's controlled environment (e.g., sub-atmospheric pressure). The system includes an active interdiction control system to implement corrective processing within the system when a non-conformity is detected. The corrective processing can include a remedial process sequence to correct the non-conformity or compensate for the non-conformity during subsequent process. The non-conformity may be associated with fabrication measurement data, process parameter data, and/or platform performance data.

公开(公告)号：US11961721B2

公开(公告)日：2024-04-16

申请号：US17197947

申请日：2021-03-10

Applicant: Tokyo Electron Limited

Inventor： Ching Ling Meng ,  Holger Tuitje ,  Qiang Zhao ,  Hanyou Chu ,  Xinkang Tian

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/67 ,  G01N21/00

CPC classification number: H01J37/32972 ,  H01J37/32449 ,  H01J37/32963 ,  H01L21/67253 ,  H01L22/26 ,  G01N21/00 ,  H01J37/32458 ,  H01J2237/3345

Abstract: An apparatus for in-situ etching monitoring in a plasma processing chamber includes a continuous wave broadband light source, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed from the continuous wave broadband light source at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and to direct the reflected light beam to a first light detector, and a controller. The controller is configured to determine a property of the substrate or structures formed thereupon based on a reference light beam and the reflected light beam, and control an etch process based on the determined property. The reference light beam is generated by the illumination system by splitting a portion of the incident light beam and directed to a second light detector.

公开(公告)号：US12261030B2

公开(公告)日：2025-03-25

申请号：US18605526

申请日：2024-03-14

Applicant: Tokyo Electron Limited

Inventor： Ching Ling Meng ,  Holger Tuitje ,  Qiang Zhao ,  Hanyou Chu ,  Xinkang Tian

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/67 ,  G01N21/00

Abstract: An apparatus for in-situ etching monitoring in a plasma processing chamber includes a continuous wave broadband light source, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed from the continuous wave broadband light source at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and to direct the reflected light beam to a first light detector, and a controller. The controller is configured to determine a property of the substrate or structures formed thereupon based on a reference light beam and the reflected light beam, and control an etch process based on the determined property. The reference light beam is generated by the illumination system by splitting a portion of the incident light beam and directed to a second light detector.

公开(公告)号：US11101173B2

公开(公告)日：2021-08-24

申请号：US16356372

申请日：2019-03-18

Applicant: Tokyo Electron Limited

Inventor： Robert Clark ,  Jeffrey Smith ,  Kandabara Tapily ,  Angelique Raley ,  Qiang Zhao

IPC: H01L21/67 ,  H01L21/768 ,  H01L21/66 ,  H01L21/677 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311 ,  G05B13/02 ,  G05B19/418 ,  C23C14/24 ,  C23C14/34 ,  H01J37/32

Abstract: This disclosure relates to a method for using a high volume manufacturing system for processing and measuring workpieces in a semiconductor processing sequence without leaving the system's controlled environment (e.g., sub-atmospheric pressure). The system includes an active interdiction control system to implement corrective processing within the system when a non-conformity is detected. The corrective processing method can include a remedial process sequence to correct the non-conformity or compensate for the non-conformity during subsequent process. The non-conformity may be associated with fabrication measurement data, process parameter data, and/or platform performance data.

公开(公告)号：US20200043710A1

公开(公告)日：2020-02-06

申请号：US16051082

申请日：2018-07-31

Applicant: Tokyo Electron Limited

Inventor： Ching Ling Meng ,  Holger Tuitje ,  Qiang Zhao ,  Hanyou Chu ,  Xinkang Tian

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/66

Abstract: An apparatus, a system, and a method for in-situ etching monitoring in a plasma processing chamber are provided. The apparatus includes a continuous wave broadband light source to generate incident light beam, an illumination system configured to illuminate an area on a substrate with an incident light beam being directed at normal incidence to the substrate, a collection system configured to collect a reflected light beam being reflected from the illuminated area on the substrate, and direct the reflected light beam to a detector, and processing circuitry. The processing circuitry is configured to process the reflected light beam to suppress background light, determine a property of the substrate or structures formed thereupon based on reference light beam and the reflected light beam that are processed to suppress the background light, and control an etch process based on the determined property.