公开(公告)号：US20210313171A1

公开(公告)日：2021-10-07

申请号：US17266672

申请日：2019-08-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Rintaro HIGUCHI ,  Tsunemoto OGATA ,  Mitsunori NAKAMORI

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  B08B3/02 ,  B08B7/00 ,  B08B7/04 ,  F26B3/02 ,  F26B3/28

Abstract: A substrate processing method for removing liquid on a substrate having an uneven pattern formed on a surface of the substrate and drying the substrate. The substrate processing method includes: forming a laminate having a two-layer structure including a first material in a solid state forming a lower layer and a second material in a solid state forming an upper layer, in a concave portion of the pattern; removing the second material from the concave portion by performing at least one of a heating process, a light-emitting process, and a reaction process using gas with respect to the second material to sublimate, decompose, and gas-react the second material; and removing the first material from the concave portion by performing at least one of the heating process, the light-emitting process, and the reaction process using gas with respect to the first material to sublimate, decompose, and gas-react the first material.

公开(公告)号：US20240128307A1

公开(公告)日：2024-04-18

申请号：US18275908

申请日：2022-01-31

Applicant: Tokyo Electron Limited

Inventor： Rintaro HIGUCHI ,  Mitsunori NAKAMORI ,  Koji KAGAWA ,  Kenji SEKIGUCHI ,  Hajime NAKABAYASHI ,  Syuhei YONEZAWA

IPC: H01G4/08 ,  C23C16/34 ,  C23C16/40 ,  C23C16/56

CPC classification number: H01L28/40 ,  C23C16/34 ,  C23C16/403 ,  C23C16/405 ,  C23C16/56

Abstract: A substrate processing method includes: (A) preparing a substrate, on which a high-dielectric film having a higher permittivity than a SiO2 film is formed; (B) supplying, to the substrate, a metal solution containing a second metal element having a higher electronegativity or a lower valence than a first metal element contained in the high-dielectric film; and (C) forming a doping layer, in which the first metal element is substituted with the second metal element, on a surface of the high-dielectric film.