公开(公告)号：US20150170963A1

公开(公告)日：2015-06-18

申请号：US14564569

申请日：2014-12-09

Applicant: Tokyo Electron Limited

Inventor： Tadahiro ISHIZAKA ,  Kotaro MIYATANI ,  Takuya KUROTORI

IPC: H01L21/768

CPC classification number: H01L21/76826 ,  C23C14/046 ,  C23C14/165 ,  H01J37/321 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/3426 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/31058 ,  H01L21/67109 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/68742 ,  H01L21/68792 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76877

Abstract: A semiconductor device manufacturing method includes: performing nitrogen plasma processing on an interlayer insulating film made of a fluorine containing carbon film having a recess formed in a surface thereof in a predetermined pattern; forming a Ru film directly on the fluorine containing carbon film subjected to the nitrogen plasma processing. The semiconductor device manufacturing method further includes filling a Cu film in the recess to form a Cu wiring.

Abstract translation: 一种半导体器件的制造方法，其特征在于，在由含氟碳膜构成的层间绝缘膜上，以规定的图案形成有表面的凹部，进行氮等离子体处理; 在经受氮等离子体处理的含氟碳膜上直接形成Ru膜。 半导体器件制造方法还包括在凹部中填充Cu膜以形成Cu布线。

公开(公告)号：US20160240374A1

公开(公告)日：2016-08-18

申请号：US15043242

申请日：2016-02-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru KASAI ,  Kotaro MIYATANI ,  Takuya KUROTORI ,  Kenichi KOTE ,  Yutaka FUJINO ,  Akira TANIHARA ,  Kohei KAWAMURA

IPC: H01L21/02

CPC classification number: H01L21/02345 ,  H01L21/0212 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/02315

Abstract: In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.

Abstract translation: 在与金属接触的氟碳系绝缘膜的形成方法中，在含氢气氛中对附着有水分的金属照射微波。 然后，对照射微波的金属进行基于碳氟化合物气体的等离子体CVD，形成绝缘膜。

公开(公告)号：US20220068637A1

公开(公告)日：2022-03-03

申请号：US17310258

申请日：2019-10-28

Applicant: Tokyo Electron Limited

Inventor： Kotaro MIYATANI ,  Naotaka NORO ,  Kouji SHIMOMURA ,  Ryoun SHIMAMOTO ,  Toshiyuki IKEUCHI ,  Younggi HONG

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/52 ,  C23C16/44 ,  C23C16/455

Abstract: A film-forming method of forming an oxide film on a substrate inside a chamber, includes: adsorbing a raw material gas for forming the oxide film onto the substrate by supplying the raw material gas into the chamber; and oxidizing the raw material gas adsorbed onto the substrate with oxygen-containing radicals produced by supplying a hydrogen gas and an oxygen gas into the chamber while preheating the hydrogen gas and the oxygen gas, wherein the adsorbing the raw material gas and the oxidizing the raw material gas are repeated, and when supplying at least one of the hydrogen gas and the oxygen gas, a supply partial pressure of the at least one of the hydrogen gas and the oxygen gas is changed to be relatively high at an initial supply stage and to gradually decrease over time.

公开(公告)号：US20230137865A1

公开(公告)日：2023-05-04

申请号：US18049661

申请日：2022-10-26

Applicant: Tokyo Electron Limited

Inventor： Takayuki KARAKAWA ,  Kotaro MIYATANI ,  Hideo NAKAMURA ,  Katsushige HARADA ,  Yuichiro MOROZUMI

IPC: H01L27/108 ,  C23C16/56 ,  C23C16/455 ,  C23C16/40 ,  C23C16/34

Abstract: A method of forming a crystalline structure film containing strontium, titanium, and oxygen on a substrate, includes: forming an amorphous structure film on a surface of a titanium nitride film formed on a surface of the substrate, the amorphous structure film containing strontium and oxygen and having a titanium content adjusted so that a content ratio of titanium to strontium based on the number of atoms becomes a value in a range of 0 or more and less than 1.0; and obtaining a crystalline structure film containing strontium, titanium and oxygen and containing titanium diffused from the titanium nitride film by heating the substrate, on which the amorphous structure film is formed, at a temperature of 500 degrees C. or higher.