公开(公告)号：US20230111278A1

公开(公告)日：2023-04-13

申请号：US17961589

申请日：2022-10-07

Applicant: Tokyo Electron Limited

Inventor： Soya TODO ,  Ryohei TAKEDA ,  Muneyuki OMI ,  Shin OKAMOTO ,  Joji TAKAYOSHI

IPC: H01J37/32

Abstract: The present disclosure provides a non-transitory computer-readable storage medium storing a control program of a plasma processing apparatus which performs a plasma processing by supplying a source power to a plasma generator and supplying a bias power to a stage that places a processing target substrate thereon. The control program causes a computer to execute a process including: monitoring a peak-to-peak voltage value of the source power or the bias power; and correcting the source power supplied to the plasma generator and the bias power supplied to the stage according to a fluctuation of the peak-to-peak voltage value, to make the monitored peak-to-peak voltage value approach an initial set value while fixing a ratio of the source power and the bias power.

公开(公告)号：US20210066048A1

公开(公告)日：2021-03-04

申请号：US17003577

申请日：2020-08-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kohei MIZOTA ,  Shin OKAMOTO ,  Atsutoshi INOKUCHI

IPC: H01J37/32 ,  H01J37/16 ,  H05H1/46

Abstract: An apparatus for plasma processing that performs an etching on a workpiece, includes: a container; a gas supply system for supplying a processing gas into the container; a plasma source for exciting the processing gas; a support for holding the workpiece inside the container; an exhaust system for exhausting an internal space of the container; electrode plates provided on an inner wall of the container; insulators for electrically insulating the electrode plates from each other; a DC power supply for independently applying a DC voltage to each of the electrode plates; and a controller for controlling the gas supply system, the plasma source, and the DC power supply. The controller controls the gas supply system, the plasma source, and the DC power supply such that the DC voltage is supplied to each electrode plate during execution of the etching or after completion of the etching.

公开(公告)号：US20150170933A1

公开(公告)日：2015-06-18

申请号：US14576574

申请日：2014-12-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiromasa MOCHIKI ,  Shin OKAMOTO ,  Takashi NISHIJIMA ,  Fumio YAMAZAKI

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01L21/0273 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32137

Abstract: An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processing space and a mounting table, and a DC power supply for supplying a DC power to an electrode. The method includes a modification step for modifying a shape of a pattern formed on the mask film; and an etching step for etching the target film by using the mask film. The mask film is etched by the plasma in the modification step. Further, in the etching step, the DC power is applied to the electrode and the lower high frequency power is applied to the mounting table in a pulse wave form in which a higher and a lower power level are repeated.

Abstract translation: 在包括第一和第二电源的基板处理装置中执行用于蚀刻形成有目标膜和掩模膜的基板的蚀刻处理方法，该第一和第二电源分别向处理空间提供较高和较低的高频功率， 台，以及用于向电极提供直流电力的直流电源。 该方法包括用于修改形成在掩模膜上的图案的形状的修改步骤; 以及通过使用掩模膜蚀刻目标膜的蚀刻步骤。 在修改步骤中，通过等离子体蚀刻掩模膜。 此外，在蚀刻步骤中，将直流电力施加到电极，并且将较低的高频功率以重复更高和较低功率电平的脉搏波形式施加到安装台。