公开(公告)号：US11721595B2

公开(公告)日：2023-08-08

申请号：US16737168

申请日：2020-01-08

Applicant: Tokyo Electron Limited

Inventor： Sho Oikawa ,  Seiji Yokoyama ,  Taichi Okano ,  Shunichi Kawasaki

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/52 ,  H01L21/66 ,  C23C14/34 ,  C23C16/503 ,  C23C14/54

CPC classification number: H01L22/20 ,  C23C14/34 ,  C23C14/54 ,  C23C16/503 ,  C23C16/52 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32926 ,  H01L21/02274 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/3321

Abstract: A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, and a first power supply configured to apply voltage to the outer peripheral member. The method includes a step of exposing the object to a plasma containing a precursor having a deposition property, while applying voltage from the first power supply to the outer peripheral member. In applying voltage to the outer peripheral member, a status of a deposition film containing carbon that is deposited on the outer peripheral member is monitored, and the voltage applied to the outer peripheral member is controlled based on the monitored status of the deposition film.

公开(公告)号：US11211229B2

公开(公告)日：2021-12-28

申请号：US16735858

申请日：2020-01-07

Applicant: Tokyo Electron Limited

Inventor： Sho Oikawa ,  Seiji Yokoyama ,  Taichi Okano ,  Shunichi Kawasaki

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/66

Abstract: A method of processing an object using a plasma processing apparatus is provided. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, a first power supply configured to apply voltage to the outer peripheral member, and a memory storing information about a relationship between the voltage applied to the outer peripheral member and an adjustment amount of a process parameter. The method includes: applying voltage from the first power supply to the outer peripheral member; adjusting the process parameter based on the voltage applied to the outer peripheral member, by referring to the information stored in the memory; and performing a plasma process under a process condition including the adjusted process parameter.

公开(公告)号：US11610766B2

公开(公告)日：2023-03-21

申请号：US16674401

申请日：2019-11-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Seiji Yokoyama ,  Taichi Okano ,  Sho Oikawa ,  Shunichi Kawasaki ,  Toshifumi Nagaiwa

IPC: H01J37/32 ,  H01J37/34 ,  H01L21/311 ,  H01L21/02

Abstract: A target object processing method is provided for processing a target object using a plasma processing apparatus including a processing chamber, a mounting table which is disposed in the processing chamber and on which the target object is mounted, an outer peripheral member disposed around the mounting table, and a first voltage application device configured to apply a voltage to the outer peripheral member. The method comprises preparing the target object having an etching target film and a patterned mask formed on the etching target film, and processing the mask. The step of processing the mask includes supplying a first processing gas containing a first rare gas to the processing chamber, and a first plasma processing for processing the mask positioned at an outer peripheral portion of the target object using plasma of the first processing gas while applying a DC voltage to the outer peripheral member.