公开(公告)号：US20190283093A1

公开(公告)日：2019-09-19

申请号：US16354619

申请日：2019-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sung Duk SON ,  Shingo HISHIYA ,  Akinobu KAKIMOTO

IPC: B08B9/08 ,  B08B5/00 ,  C23C16/44

Abstract: There is provided a method of cleaning a film forming apparatus conducted after a film forming process by supplying a source gas and a reaction gas to produce a reaction product into a processing container to form a film of the reaction product on a substrate. The method includes: controlling, in the film forming process, a first film deposited in the processing container and a second film deposited in a source gas supply part to become different kinds of films; performing, after the film forming process, a cleaning process by supplying a cleaning gas having an etching selection ratio of the second film to the first film being greater than 1 so as to etch and remove the second film; and performing, after the cleaning process, a surface control process of making a surface state of the first film close to a state before the cleaning process was performed.

公开(公告)号：US20220122867A1

公开(公告)日：2022-04-21

申请号：US17449848

申请日：2021-10-04

Applicant: Tokyo Electron Limited

Inventor： Shingo HISHIYA ,  Hiroaki IKEGAWA ,  Volker HEMEL ,  Bernhard ZOBEL ,  Sung Duk SON

IPC: H01L21/677 ,  H01L21/67 ,  C23C16/44

Abstract: With respect to a boat transfer method for transferring a boat holding a substrate into a processing chamber, the boat transfer method includes supplying a reducing gas into the processing chamber, and transferring the boat into the processing chamber in a state in which the reducing gas is present within the processing chamber.

公开(公告)号：US20210292905A1

公开(公告)日：2021-09-23

申请号：US17186149

申请日：2021-02-26

Applicant: Tokyo Electron Limited

Inventor： Shingo HISHIYA ,  Sung Duk SON

IPC: C23C16/54 ,  C23C16/455 ,  C23C16/44 ,  C23C16/458

Abstract: A substrate processing apparatus includes a processing chamber configured to accommodate a substrate, an injector, including a first connection port and a second connection port, wherein an inside of the injector communicates with an inside of the processing chamber, an exhaust pipe configured to exhaust the inside of the processing chamber, a source gas introducing pipe, connected to the first connection port, and configured to introduce a source gas into the injector, a cleaning gas introducing pipe configured to introduce a cleaning gas into the injector through one of the first connection port and the second connection port, and a vent pipe, connecting the exhaust pipe and the other of the first connection port and the second connection port, and configured to exhaust the inside of the injector.

公开(公告)号：US20240175125A1

公开(公告)日：2024-05-30

申请号：US18523060

申请日：2023-11-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sung Duk SON

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

CPC classification number: C23C16/4405 ,  C23C16/45563 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32834 ,  H01J37/32862 ,  H01J2237/1825 ,  H01J2237/334

Abstract: A substrate processing apparatus includes: a processing container configured to be depressurized; a plasma box including an interior, which communicates with an interior of the processing container, and configured such that plasma is generated in the interior of the plasma box; a first gas nozzle installed in the processing container and into which a cleaning gas is introduced; and a second gas nozzle installed in the plasma box and configured such that an interior of the second gas nozzle is adjusted to have a negative pressure with respect to the interior of the processing container.

公开(公告)号：US20130164946A1

公开(公告)日：2013-06-27

申请号：US13726778

申请日：2012-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Keisuke SUZUKI ,  Kentaro KADONAGA ,  Byoung Hoon LEE ,  Eun Jo LEE ,  Sung Duk SON ,  Jae Hyuk JANG ,  Do Hyun PARK

IPC: H01L21/31

CPC classification number: H01L21/31 ,  C23C8/34 ,  C23C16/24 ,  C23C16/56 ,  C23C28/04 ,  C23C28/42 ,  H01L21/02126 ,  H01L21/022

Abstract: The method of forming a silicon oxycarbonitride film on a base includes stacking a silicon carbonitride film and a silicon oxynitride film on the base to form the silicon oxycarbonitride film.

Abstract translation: 在基底上形成硅碳氮氧化物膜的方法包括在基底上堆叠碳氮化硅膜和氧氮化硅膜以形成硅碳氮氧化物膜。