公开(公告)号：US20190096716A1

公开(公告)日：2019-03-28

申请号：US16136793

申请日：2018-09-20

Applicant: Tokyo Electron Limited

Inventor： Hideaki Iwasaka ,  Kouichi Mizunaga ,  Takahiro Hayashida

IPC: H01L21/67 ,  H01L21/677 ,  F27D7/06

Abstract: A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.

公开(公告)号：US10964564B2

公开(公告)日：2021-03-30

申请号：US16136793

申请日：2018-09-20

Applicant: Tokyo Electron Limited

Inventor： Hideaki Iwasaka ,  Kouichi Mizunaga ,  Takahiro Hayashida

IPC: H01L21/67 ,  F27D7/06 ,  H01L21/677 ,  H01L21/687 ,  F27D19/00

Abstract: A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.

公开(公告)号：US20240242977A1

公开(公告)日：2024-07-18

申请号：US18412768

申请日：2024-01-15

Applicant: Tokyo Electron Limited

Inventor： Shota Umezaki ,  Takahiro Hayashida ,  Mikio Nakashima ,  Takafumi Yasunaga

IPC: H01L21/67

CPC classification number: H01L21/67023 ,  H01L21/67167 ,  H01L21/67196

Abstract: A substrate processing apparatus includes a unit block including multiple liquid film forming devices each configured to form a liquid film on a top surface of a substrate, and a drying device configured to replace the liquid film with a supercritical fluid to dry the substrate; and a transfer block provided between the multiple liquid film forming devices and the drying device. The transfer block includes a transfer device configured to transfer the substrate between the multiple liquid film forming devices and the drying device, and a length of a transfer path of the substrate is equal between each of the multiple liquid film forming devices and the drying device.

公开(公告)号：US11842906B2

公开(公告)日：2023-12-12

申请号：US17184688

申请日：2021-02-25

Applicant: Tokyo Electron Limited

Inventor： Hideaki Iwasaka ,  Kouichi Mizunaga ,  Takahiro Hayashida

IPC: H01L21/67 ,  F27D7/06 ,  H01L21/677 ,  H01L21/687 ,  F27D19/00

CPC classification number: H01L21/67109 ,  F27D7/06 ,  H01L21/6719 ,  H01L21/67103 ,  H01L21/67739 ,  H01L21/68742 ,  F27D19/00

Abstract: A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.

公开(公告)号：US20210183669A1

公开(公告)日：2021-06-17

申请号：US17184688

申请日：2021-02-25

Applicant: Tokyo Electron Limited

Inventor： Hideaki Iwasaka ,  Kouichi Mizunaga ,  Takahiro Hayashida

IPC: H01L21/67 ,  F27D7/06 ,  H01L21/677 ,  H01L21/687

Abstract: A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.