公开(公告)号：US11527404B2

公开(公告)日：2022-12-13

申请号：US16818491

申请日：2020-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tetsuya Saitou ,  Takashi Kamio ,  Kazuyoshi Yamazaki ,  Naoshige Fushimi

IPC: H01L21/02 ,  H01L21/67

Abstract: An apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; a gas supply mechanism for supplying a processing gas into the processing container; and at least three ultraviolet light sources provided to irradiate the processing gas inside the processing container with ultraviolet rays. The ultraviolet light sources are provided to be offset from a rotation axis of the stage in a plan view, and are arranged in a light source arrangement direction with distances from the ultraviolet light sources to the rotation axis being different from one another. The ultraviolet light sources include first to third ultraviolet light source. The third ultraviolet light source is arranged such that distances L1, L2, and L3 from the first to third ultraviolet light sources, respectively, to the rotation axis in a plan view satisfies a relationship of L1

公开(公告)号：US11104991B2

公开(公告)日：2021-08-31

申请号：US15787916

申请日：2017-10-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi Kamio ,  Toshiaki Fujisato

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23C16/34

Abstract: There is provided a processing apparatus including a stage disposed inside a chamber, and a cover member provided in an outer edge portion of the stage and configured to partition an interior of the chamber into a processing space above the stage and a bottom space below the stage. The cover member includes a first protrusion portion configured to make surface-to-surface contact with a surface of the stage, a second protrusion portion spaced apart from the first protrusion portion and configured to make surface-to-surface contact with the surface of the stage, and an exhaust path provided between the first protrusion portion and the second protrusion portion and configured to exhaust a gas from a buffer space formed by the cover member and the stage.

公开(公告)号：US11578408B2

公开(公告)日：2023-02-14

申请号：US16035817

申请日：2018-07-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi Kamio ,  Yu Nunoshige

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/44 ,  C23C16/458

Abstract: A gas processing apparatus includes: a mounting part; a gas supply part located above the mounting part and having a plurality of first gas supply holes; a gas supply path forming part configured to form a supply path of a processing gas, the gas supply path forming part including a flat opposing surface which faces the gas supply part from above and defines a first diffusion space for diffusing the processing gas in a lateral direction; a recess surrounding a central portion of the opposing surface; and a plurality of gas dispersion portions located in the recess surrounding the central portion of the opposing surface without protruding from the opposing surface, each of the plurality of gas dispersion portions having a plurality of gas discharge holes extending along a circumferential direction so as to laterally disperse the processing gas supplied from the supply path in the first diffusion space.

公开(公告)号：US20180311700A1

公开(公告)日：2018-11-01

申请号：US15960885

申请日：2018-04-24

Applicant: Tokyo Electron Limited

Inventor： Hiroaki Ashizawa ,  Yasushi Fujii ,  Tsuyoshi Takahashi ,  Seokhyoung Hong ,  Kazuyoshi Yamazaki ,  Hideo Nakamura ,  Yu Nunoshige ,  Takashi Kamio

IPC: B05D1/34 ,  B05D1/38 ,  B05D3/00

Abstract: A step of constantly supplying first and second carrier gases into a processing container having a substrate therein through first and second carrier gas flow paths, respectively, and supplying a source gas into the processing container through a source gas flow path, a step of purging the source gas by supplying a purge gas into the processing container through a purge gas flow path provided separately from the carrier gas, a step of supplying a reactant gas into the processing container through a reactant gas flow path, and a step of purging the reactant gas by supplying a purge gas into the processing container through the purge gas flow path are performed in a predetermined cycle. An additive gas having a predetermined function is supplied as at least a part of the purge gas in at least one of the purging steps.

公开(公告)号：US11499225B2

公开(公告)日：2022-11-15

申请号：US16530160

申请日：2019-08-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirotaka Kuwada ,  Takashi Kamio ,  Yu Nunoshige ,  Yasushi Fujii

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/34

Abstract: There is provided a gas processing apparatus, including: a vacuum vessel; a mounting part installed in the vacuum vessel and configured to mount a substrate; an opposing part configured to face the mounting part and including first gas discharge ports configured to discharge a processing gas to the substrate; a first diffusion space configured to communicate with the first gas discharge ports; second gas discharge ports formed in a ceiling portion and configured to supply the processing gas to a central portion of the first diffusion space; a second diffusion space configured to communicate with the second gas discharge ports; a gas supply path installed at an upstream side of the second diffusion space and configured to supply the processing gas to the second diffusion space; and third gas discharge ports configured to be opened to an outer portion of the ceiling portion in an oblique direction.

公开(公告)号：US11236423B2

公开(公告)日：2022-02-01

申请号：US16726369

申请日：2019-12-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takashi Kamio ,  Tetsuya Saitou ,  Kai Shiono

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/46 ,  C23C16/458 ,  B05C13/00

Abstract: A film-forming apparatus includes a processing container having a vacuum atmosphere therein, a stage having a heater and disposed in the processing container to load a substrate thereon, a gas discharge mechanism provided at a position to face the stage, and an exhaust part configured to exhaust an inside of the processing container. The gas discharge mechanism includes a gas intake port configured to introduce a processing gas into the processing container, a first plate-shaped member having a first opening formed in a more radially outward position than the gas intake port and a shower plate disposed between the first plate-shaped member and the stage to supply the processing gas from the first opening to a process space through a plurality of gas holes.