公开(公告)号：US11551933B2

公开(公告)日：2023-01-10

申请号：US16781362

申请日：2020-02-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Mitsuhiro Okada ,  Yasushi Fujii

IPC: H01L21/44 ,  H01L21/285 ,  C23C16/46

Abstract: According to one embodiment of the present disclosure, there is provided a substrate processing method including: providing a substrate; forming a seed layer on a surface of the substrate by heating a stage on which the substrate is placed to a first temperature and supplying a first source gas to the substrate; and forming a metal-containing film by heating the stage on which the substrate is placed to a second temperature and supplying a second source gas and a first reducing gas to the substrate on which the seed layer is formed.

公开(公告)号：US11499225B2

公开(公告)日：2022-11-15

申请号：US16530160

申请日：2019-08-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirotaka Kuwada ,  Takashi Kamio ,  Yu Nunoshige ,  Yasushi Fujii

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/34

Abstract: There is provided a gas processing apparatus, including: a vacuum vessel; a mounting part installed in the vacuum vessel and configured to mount a substrate; an opposing part configured to face the mounting part and including first gas discharge ports configured to discharge a processing gas to the substrate; a first diffusion space configured to communicate with the first gas discharge ports; second gas discharge ports formed in a ceiling portion and configured to supply the processing gas to a central portion of the first diffusion space; a second diffusion space configured to communicate with the second gas discharge ports; a gas supply path installed at an upstream side of the second diffusion space and configured to supply the processing gas to the second diffusion space; and third gas discharge ports configured to be opened to an outer portion of the ceiling portion in an oblique direction.

公开(公告)号：US11248293B2

公开(公告)日：2022-02-15

申请号：US16557285

申请日：2019-08-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hirotaka Kuwada ,  Yu Nunoshige ,  Yasushi Fujii

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/458 ,  C23C16/44

Abstract: An apparatus includes: a vacuum container having a vacuum atmosphere for a film forming process on each substrate; a stage for heating the substrate mounted thereon; a shower head including a facing portion that faces the stage and ejection ports opened in the facing portion, which supplies a film-forming gas to the substrate through the ports so as to form a film on the substrate; a cleaning gas supply part for supplying a cleaning gas into the container to clean the interior of the container in a state where no substrate is accommodated in the container while the film forming process is applied on the each of the plurality of substrates; and a non-porous coating film for covering a base material constituting the shower head at least in the facing portion to form a surface of the shower head when the film-forming gas is supplied to each substrate.

公开(公告)号：US20180311700A1

公开(公告)日：2018-11-01

申请号：US15960885

申请日：2018-04-24

Applicant: Tokyo Electron Limited

Inventor： Hiroaki Ashizawa ,  Yasushi Fujii ,  Tsuyoshi Takahashi ,  Seokhyoung Hong ,  Kazuyoshi Yamazaki ,  Hideo Nakamura ,  Yu Nunoshige ,  Takashi Kamio

IPC: B05D1/34 ,  B05D1/38 ,  B05D3/00

Abstract: A step of constantly supplying first and second carrier gases into a processing container having a substrate therein through first and second carrier gas flow paths, respectively, and supplying a source gas into the processing container through a source gas flow path, a step of purging the source gas by supplying a purge gas into the processing container through a purge gas flow path provided separately from the carrier gas, a step of supplying a reactant gas into the processing container through a reactant gas flow path, and a step of purging the reactant gas by supplying a purge gas into the processing container through the purge gas flow path are performed in a predetermined cycle. An additive gas having a predetermined function is supplied as at least a part of the purge gas in at least one of the purging steps.

公开(公告)号：US10333062B2

公开(公告)日：2019-06-25

申请号：US15768217

申请日：2016-10-14

Applicant: Tokyo Electron Limited

Inventor： Yasushi Fujii ,  Takayuki Toshima

IPC: H01L21/00 ,  H01L43/12 ,  H01L21/304 ,  H01L43/08 ,  H01L27/22

Abstract: Provided is a substrate including a first magnetic layer, a second magnetic layer, and a tunnel insulating layer formed of magnesium oxide and disposed between the first magnetic layer and the second magnetic layer. A cleaning liquid is supplied to the substrate to clean the substrate and then, a rinsing liquid is supplied to the substrate to rinse the cleaning liquid. The concentration of moisture contained in the cleaning liquid and the rinse liquid is than 3 wt % or less.

公开(公告)号：US11732357B2

公开(公告)日：2023-08-22

申请号：US16892766

申请日：2020-06-04

Applicant: Tokyo Electron Limited

Inventor： Tsuyoshi Takahashi ,  Mitsuhiro Okada ,  Yasushi Fujii ,  Yu Nunoshige ,  Shinji Kawasaki ,  Hirotaka Kuwada ,  Toshio Takagi

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/44

CPC classification number: C23C16/45544 ,  C23C16/4408 ,  C23C16/4554 ,  C23C16/4582 ,  C23C16/45527 ,  C23C16/45557 ,  C23C16/52

Abstract: A substrate processing method in substrate processing apparatus comprises repeating cycle including: supplying source gas into process container causing the source gas to be adsorbed to substrate; exhausting excess source gas from the process container; supplying reaction gas into the process container causing the reaction gas to react with the source gas; and exhausting excess reaction gas, wherein at least one of a gap width between placement stage and member forming processing space between the member and the stage and degree of opening of pressure adjustment valve in at least one of the supplying the source gas and the supplying the reaction gas is smaller than at least one of a gap width between the stage and the member and the degree of opening of the pressure adjustment valve in at least one of the exhausting the excess source gas and the exhausting the excess reaction gas, respectively.

公开(公告)号：US10340176B2

公开(公告)日：2019-07-02

申请号：US15660622

申请日：2017-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshiaki Fujisato ,  Hiroaki Ashizawa ,  Taichi Monden ,  Yasushi Fujii ,  Yu Nunoshige

IPC: H01L21/68 ,  H01L21/687 ,  H01L21/677

Abstract: There is provided a substrate mounting method of bringing a substrate close to a mounting table to mount the substrate on the mounting table by reducing a protrusion amount of a plurality of projections configured to protrude from a substrate-mounting surface of the mounting table and to support the substrate, the protrusion amount being defined to protrude from the substrate-mounting surface. The method includes: after at least a portion of the substrate is brought into contact with the substrate-mounting surface, halting an operation of bringing the substrate close to the mounting table; and after the halting the operation of bringing the substrate close to the mounting table, resuming the operation of bringing the substrate close to the mounting table.

公开(公告)号：US20180301623A1

公开(公告)日：2018-10-18

申请号：US15768217

申请日：2016-10-14

Applicant: Tokyo Electron Limited

Inventor： Yasushi Fujii ,  Takayuki Toshima

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/08

Abstract: According to the present invention, a substrate (W) which has a first magnetic layer (81), a second magnetic layer (82), and a tunnel insulating layer (83) that is formed of magnesium oxide and is arranged between the first magnetic layer (81) and the second magnetic layer (82) is prepared. The substrate (W) is cleaned by supplying a cleaning liquid to the substrate (W), and subsequently, the cleaning liquid is rinsed by supplying a rinsing liquid to the substrate (W). The concentrations of water contained in the cleaning liquid and in the rinsing liquid are 3 wt % by weight or less.