Film forming apparatus, gas supply device and film forming method

    公开(公告)号:US09644266B2

    公开(公告)日:2017-05-09

    申请号:US14223582

    申请日:2014-03-24

    CPC classification number: C23C16/4408 H01J37/3244 H01J37/32862 Y10T137/4245

    Abstract: There is provided a film forming apparatus including gas supply paths, retaining units, valves, a purge gas supply unit and a control unit. The control unit is configured to implements a film forming process for sequentially performing operations of actuating the valves such that reaction gases are retained in the retaining units, the internal pressures of the retaining units are increased and then the reaction gases are supplied from the retaining units into the process chamber, and a purging process for subsequently repeating, a plurality number of times, operations of actuating the valves such that the purge gas is retained in the retaining units, the internal pressures of the retaining units are increased to a pressure higher than the internal pressures of the retaining units which is increased in the film forming process, and then the purge gas is supplied from the retaining units into the process chamber.

    Substrate mounting method and substrate mounting device

    公开(公告)号:US10340176B2

    公开(公告)日:2019-07-02

    申请号:US15660622

    申请日:2017-07-26

    Abstract: There is provided a substrate mounting method of bringing a substrate close to a mounting table to mount the substrate on the mounting table by reducing a protrusion amount of a plurality of projections configured to protrude from a substrate-mounting surface of the mounting table and to support the substrate, the protrusion amount being defined to protrude from the substrate-mounting surface. The method includes: after at least a portion of the substrate is brought into contact with the substrate-mounting surface, halting an operation of bringing the substrate close to the mounting table; and after the halting the operation of bringing the substrate close to the mounting table, resuming the operation of bringing the substrate close to the mounting table.

    Gas processing apparatus and gas processing method

    公开(公告)号:US11499225B2

    公开(公告)日:2022-11-15

    申请号:US16530160

    申请日:2019-08-02

    Abstract: There is provided a gas processing apparatus, including: a vacuum vessel; a mounting part installed in the vacuum vessel and configured to mount a substrate; an opposing part configured to face the mounting part and including first gas discharge ports configured to discharge a processing gas to the substrate; a first diffusion space configured to communicate with the first gas discharge ports; second gas discharge ports formed in a ceiling portion and configured to supply the processing gas to a central portion of the first diffusion space; a second diffusion space configured to communicate with the second gas discharge ports; a gas supply path installed at an upstream side of the second diffusion space and configured to supply the processing gas to the second diffusion space; and third gas discharge ports configured to be opened to an outer portion of the ceiling portion in an oblique direction.

    Film-forming apparatus and film-forming method

    公开(公告)号:US11248293B2

    公开(公告)日:2022-02-15

    申请号:US16557285

    申请日:2019-08-30

    Abstract: An apparatus includes: a vacuum container having a vacuum atmosphere for a film forming process on each substrate; a stage for heating the substrate mounted thereon; a shower head including a facing portion that faces the stage and ejection ports opened in the facing portion, which supplies a film-forming gas to the substrate through the ports so as to form a film on the substrate; a cleaning gas supply part for supplying a cleaning gas into the container to clean the interior of the container in a state where no substrate is accommodated in the container while the film forming process is applied on the each of the plurality of substrates; and a non-porous coating film for covering a base material constituting the shower head at least in the facing portion to form a surface of the shower head when the film-forming gas is supplied to each substrate.

    Gas supply apparatus and gas supply method

    公开(公告)号:US10767262B2

    公开(公告)日:2020-09-08

    申请号:US15663866

    申请日:2017-07-31

    Abstract: A gas supply apparatus for forming a film by supplying a source gas, a substitution gas, and a reaction gas to a substrate in a processing chamber includes a source gas flow passage; a reaction gas flow passage; a first and second carrier gas flow passages connected to the source gas flow passage and the reaction gas flow passage; a substitution gas flow passage configured to supply the substitution gas into the processing chamber through a supply control device; a gas storage part installed in the substitution gas flow passage, and configured to store the substitution gas; a valve installed in the substitution gas flow passage, and installed in a downstream side of the gas storage part; and a control unit configured to control opening/closing of the valve such that the substitution gas is stored in the gas storage part to increase an internal pressure of the gas storage part.

    Gas processing apparatus
    8.
    发明授权

    公开(公告)号:US11578408B2

    公开(公告)日:2023-02-14

    申请号:US16035817

    申请日:2018-07-16

    Abstract: A gas processing apparatus includes: a mounting part; a gas supply part located above the mounting part and having a plurality of first gas supply holes; a gas supply path forming part configured to form a supply path of a processing gas, the gas supply path forming part including a flat opposing surface which faces the gas supply part from above and defines a first diffusion space for diffusing the processing gas in a lateral direction; a recess surrounding a central portion of the opposing surface; and a plurality of gas dispersion portions located in the recess surrounding the central portion of the opposing surface without protruding from the opposing surface, each of the plurality of gas dispersion portions having a plurality of gas discharge holes extending along a circumferential direction so as to laterally disperse the processing gas supplied from the supply path in the first diffusion space.

    FILM FORMING METHOD AND FILM FORMING APPARATUS

    公开(公告)号:US20180311700A1

    公开(公告)日:2018-11-01

    申请号:US15960885

    申请日:2018-04-24

    Abstract: A step of constantly supplying first and second carrier gases into a processing container having a substrate therein through first and second carrier gas flow paths, respectively, and supplying a source gas into the processing container through a source gas flow path, a step of purging the source gas by supplying a purge gas into the processing container through a purge gas flow path provided separately from the carrier gas, a step of supplying a reactant gas into the processing container through a reactant gas flow path, and a step of purging the reactant gas by supplying a purge gas into the processing container through the purge gas flow path are performed in a predetermined cycle. An additive gas having a predetermined function is supplied as at least a part of the purge gas in at least one of the purging steps.

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