公开(公告)号：US11527404B2

公开(公告)日：2022-12-13

申请号：US16818491

申请日：2020-03-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tetsuya Saitou ,  Takashi Kamio ,  Kazuyoshi Yamazaki ,  Naoshige Fushimi

IPC: H01L21/02 ,  H01L21/67

Abstract: An apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; a gas supply mechanism for supplying a processing gas into the processing container; and at least three ultraviolet light sources provided to irradiate the processing gas inside the processing container with ultraviolet rays. The ultraviolet light sources are provided to be offset from a rotation axis of the stage in a plan view, and are arranged in a light source arrangement direction with distances from the ultraviolet light sources to the rotation axis being different from one another. The ultraviolet light sources include first to third ultraviolet light source. The third ultraviolet light source is arranged such that distances L1, L2, and L3 from the first to third ultraviolet light sources, respectively, to the rotation axis in a plan view satisfies a relationship of L1

公开(公告)号：US10392698B2

公开(公告)日：2019-08-27

申请号：US15667817

申请日：2017-08-03

Applicant: Tokyo Electron Limited

Inventor： Miyako Kaneko ,  Naotaka Noro ,  Tsuyoshi Takahashi ,  Kazuyoshi Yamazaki

IPC: C01C1/00 ,  C01G23/02 ,  C23C16/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/54 ,  C23C28/04 ,  C23C16/455

Abstract: A metal-containing film can be formed with high continuity with respect to a base when forming the metal-containing film on the base by CVD or ALD. A film forming method of forming, by ALD or CVD, a Ti-containing film on a base film of a processing target object having a SiO2 film as the base film includes performing a surface processing of accelerating formation of a silanol group on a surface of the SiO2 film by bringing a fluid containing O and H into contact with the surface of the SiO2 film; and performing a film forming processing of forming the Ti-containing film on the SiO2 film, on which the surface processing is performed, by the ALD or the CVD with a Ti source gas which reacts with the silanol group.

公开(公告)号：US20180311700A1

公开(公告)日：2018-11-01

申请号：US15960885

申请日：2018-04-24

Applicant: Tokyo Electron Limited

Inventor： Hiroaki Ashizawa ,  Yasushi Fujii ,  Tsuyoshi Takahashi ,  Seokhyoung Hong ,  Kazuyoshi Yamazaki ,  Hideo Nakamura ,  Yu Nunoshige ,  Takashi Kamio

IPC: B05D1/34 ,  B05D1/38 ,  B05D3/00

Abstract: A step of constantly supplying first and second carrier gases into a processing container having a substrate therein through first and second carrier gas flow paths, respectively, and supplying a source gas into the processing container through a source gas flow path, a step of purging the source gas by supplying a purge gas into the processing container through a purge gas flow path provided separately from the carrier gas, a step of supplying a reactant gas into the processing container through a reactant gas flow path, and a step of purging the reactant gas by supplying a purge gas into the processing container through the purge gas flow path are performed in a predetermined cycle. An additive gas having a predetermined function is supplied as at least a part of the purge gas in at least one of the purging steps.

公开(公告)号：US20180037989A1

公开(公告)日：2018-02-08

申请号：US15667817

申请日：2017-08-03

Applicant: Tokyo Electron Limited

Inventor： Miyako Kaneko ,  Naotaka Noro ,  Tsuyoshi Takahashi ,  Kazuyoshi Yamazaki

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/34

CPC classification number: C23C16/402 ,  C01C1/00 ,  C01G23/022 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/30 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/54 ,  C23C28/04 ,  C23C28/042

Abstract: A metal-containing film can be formed with high continuity with respect to a base when forming the metal-containing film on the base by CVD or ALD. A film forming method of forming, by ALD or CVD, a Ti-containing film on a base film of a processing target object having a SiO2 film as the base film includes performing a surface processing of accelerating formation of a silanol group on a surface of the SiO2 film by bringing a fluid containing O and H into contact with the surface of the SiO2 film; and performing a film forming processing of forming the Ti-containing film on the SiO2 film, on which the surface processing is performed, by the ALD or the CVD with a Ti source gas which reacts with the silanol group.