公开(公告)号：US20190148179A1

公开(公告)日：2019-05-16

申请号：US16186805

申请日：2018-11-12

Applicant: Tokyo Electron Limited

Inventor： Takaya Kikai ,  Yuzo Ohishi

IPC: H01L21/67 ,  B08B7/00 ,  H01L21/687 ,  H01L21/02

Abstract: A substrate processing apparatus 1 includes a rotating/holding unit 30 configured to hold and rotate a wafer W having an organic film on a front surface Wa thereof; a light irradiating unit 40 configured to irradiate light for aching of the organic film to the front surface; a gas flow forming unit 50 configured to form a gas flow of an oxygen-containing gas which passes between the wafer W and the light irradiating unit 40; an irradiation control unit 114 configured to irradiate the light to the front surface in a state that the gas flow is formed between the wafer W and the light irradiating unit 40; and a rotation control unit 115 configured to rotate the wafer W in a state that the gas flow is formed between the wafer W and the light irradiating unit 40 and the light is irradiated to the front surface.

公开(公告)号：US11469115B2

公开(公告)日：2022-10-11

申请号：US17097091

申请日：2020-11-13

Applicant: Tokyo Electron Limited

Inventor： Takaya Kikai ,  Yuzo Ohishi

IPC: H01L21/67 ,  B08B7/00 ,  H01L21/02 ,  H01L21/687 ,  H01L21/311

Abstract: A substrate processing apparatus 1 includes a rotating/holding unit 30 configured to hold and rotate a wafer W having an organic film on a front surface Wa thereof; a light irradiating unit 40 configured to irradiate light for aching of the organic film to the front surface; a gas flow forming unit 50 configured to form a gas flow of an oxygen-containing gas which passes between the wafer W and the light irradiating unit 40; an irradiation control unit 114 configured to irradiate the light to the front surface in a state that the gas flow is formed between the wafer W and the light irradiating unit 40; and a rotation control unit 115 configured to rotate the wafer W in a state that the gas flow is formed between the wafer W and the light irradiating unit 40 and the light is irradiated to the front surface.

公开(公告)号：US20210066098A1

公开(公告)日：2021-03-04

申请号：US17097091

申请日：2020-11-13

Applicant: Tokyo Electron Limited

Inventor： Takaya Kikai ,  Yuzo Ohishi

IPC: H01L21/67 ,  B08B7/00 ,  H01L21/02 ,  H01L21/687 ,  H01L21/311

Abstract: A substrate processing apparatus 1 includes a rotating/holding unit 30 configured to hold and rotate a wafer W having an organic film on a front surface Wa thereof; a light irradiating unit 40 configured to irradiate light for aching of the organic film to the front surface; a gas flow forming unit 50 configured to form a gas flow of an oxygen-containing gas which passes between the wafer W and the light irradiating unit 40; an irradiation control unit 114 configured to irradiate the light to the front surface in a state that the gas flow is formed between the wafer W and the light irradiating unit 40; and a rotation control unit 115 configured to rotate the wafer W in a state that the gas flow is formed between the wafer W and the light irradiating unit 40 and the light is irradiated to the front surface.

公开(公告)号：US20200168487A1

公开(公告)日：2020-05-28

申请号：US16776893

申请日：2020-01-30

Applicant: Tokyo Electron Limited

Inventor： Takaya Kikai ,  Yuichi Yoshida ,  Yuzo Ohishi

IPC: H01L21/67 ,  B05C11/10 ,  H01L21/02 ,  H01L21/677 ,  B05C11/08 ,  H01L21/687 ,  H01L21/027 ,  H01L21/311

Abstract: Disclosed is a substrate processing apparatus including: a processing chamber that accommodates a substrate; a light source that radiates energy rays for a processing to the substrate in the processing chamber; a rotation driving unit that rotates at least one of the substrate and the light source around an axis intersecting with the substrate in the processing chamber; an opening/closing mechanism that switches between an open state and a closed state; and a controller configured to control the opening/closing mechanism to switch between the open state and the closed state, to increase a light emission amount of the light source in synchronization with the switch of the open state to the closed state by the opening/closing mechanism, and to decrease the light emission amount of the light source in synchronization with the switch of the closed state to the open state by the opening/closing mechanism.

公开(公告)号：US20180218929A1

公开(公告)日：2018-08-02

申请号：US15879561

申请日：2018-01-25

Applicant: Tokyo Electron Limited

Inventor： Takaya Kikai ,  Yuichi Yoshida ,  Yuzo Ohishi

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/677 ,  H01L21/02 ,  B05C11/10 ,  B05C11/08

CPC classification number: H01L21/67115 ,  B05C11/08 ,  B05C11/1002 ,  H01L21/0231 ,  H01L21/0271 ,  H01L21/31138 ,  H01L21/67063 ,  H01L21/6715 ,  H01L21/67253 ,  H01L21/67739 ,  H01L21/68742 ,  H01L21/68757

Abstract: Disclosed is a substrate processing apparatus including: a processing chamber that accommodates a substrate; a light source that radiates energy rays for a processing to the substrate in the processing chamber; a rotation driving unit that rotates at least one of the substrate and the light source around an axis intersecting with the substrate in the processing chamber; an opening/closing mechanism that switches between an open state and a closed state; and a controller configured to control the opening/closing mechanism to switch between the open state and the closed state, to increase a light emission amount of the light source in synchronization with the switch of the open state to the closed state by the opening/closing mechanism, and to decrease the light emission amount of the light source in synchronization with the switch of the closed state to the open state by the opening/closing mechanism.

公开(公告)号：US11256172B2

公开(公告)日：2022-02-22

申请号：US16910209

申请日：2020-06-24

Applicant: Tokyo Electron Limited

Inventor： Takaya Kikai ,  Norihisa Koga ,  Masaru Tomono

IPC: G03B27/54 ,  G03F7/20 ,  H01L21/027

Abstract: A light irradiating device includes a processing chamber in which a substrate is accommodated; a beam source chamber in which a beam source of an energy beam is accommodated; a partition wall configured to partition the processing chamber and the beam source chamber; multiple window members provided at the partition wall to transmit the energy beam outputted from the beam source toward the substrate within the processing chamber; and multiple gas discharge units respectively disposed around the multiple window members within the processing chamber, and configured to discharge an inert gas along surfaces of the multiple window members.

公开(公告)号：US11049739B2

公开(公告)日：2021-06-29

申请号：US16260342

申请日：2019-01-29

Applicant: Tokyo Electron Limited

Inventor： Takaya Kikai ,  Yuzo Ohishi

IPC: H01L21/67 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/687

Abstract: An ashing apparatus includes a light irradiating unit configured to irradiate, to a substrate having an organic film formed on a surface thereof, processing light for ashing the organic film; a posture changing unit configured to change a posture of the substrate with respect to the light irradiating unit; and a control unit. The control unit performs: a first processing of controlling the posture changing unit and the light irradiating unit to irradiate the processing light to the surface of the substrate while changing the posture of the substrate from a first posture to a second posture; and a second processing of controlling, after the first processing, the posture changing unit and the light irradiating unit to irradiate the processing light to the surface of the substrate while changing the posture of the substrate from a third posture different from the first posture to a fourth posture.

公开(公告)号：US20190237346A1

公开(公告)日：2019-08-01

申请号：US16260342

申请日：2019-01-29

Applicant: Tokyo Electron Limited

Inventor： Takaya Kikai ,  Yuzo Ohishi

IPC: H01L21/67 ,  H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/67115 ,  H01L21/31058 ,  H01L21/31138 ,  H01L21/67248

Abstract: An ashing apparatus includes a light irradiating unit configured to irradiate, to a substrate having an organic film formed on a surface thereof, processing light for ashing the organic film; a posture changing unit configured to change a posture of the substrate with respect to the light irradiating unit; and a control unit. The control unit performs: a first processing of controlling the posture changing unit and the light irradiating unit to irradiate the processing light to the surface of the substrate while changing the posture of the substrate from a first posture to a second posture; and a second processing of controlling, after the first processing, the posture changing unit and the light irradiating unit to irradiate the processing light to the surface of the substrate while changing the posture of the substrate from a third posture different from the first posture to a fourth posture.