公开(公告)号：US20210316416A1

公开(公告)日：2021-10-14

申请号：US17358100

申请日：2021-06-25

Applicant: Tokyo Electron Limited

Inventor： Taketoshi TOMIOKA ,  Yasuharu SASAKI ,  Hiroki KISHI ,  Jisoo SUH

IPC: B24B37/32 ,  B24B37/20

Abstract: A focus ring is disposed on a peripheral portion of a lower electrode that receives a substrate thereon in a process container so as to contact a member of the lower electrode. The focus ring includes a contact surface that contacts the member of the lower electrode and is made of any one of a silicon-containing material, alumina and quartz. At least one of the contact surface of the focus ring and a contact surface of the member of the lower electrode has surface roughness of 0.1 micrometers or more.

公开(公告)号：US20210327741A1

公开(公告)日：2021-10-21

申请号：US17273009

申请日：2019-09-03

Applicant: Tokyo Electron Limited

Inventor： Akira NAGAYAMA ,  Yasuharu SASAKI ,  Taketoshi TOMIOKA ,  Shin YAMAGUCHI

IPC: H01L21/683 ,  H01J37/32

Abstract: A substrate support is provided that includes: a base; an electrostatic chuck on which a substrate is placed; an electrode provided in the electrostatic chuck; a contact portion of the electrode; an adhesive layer that bonds the electrostatic chuck with the base and that does not cover the contact portion; and a power supply terminal contacting the contact portion of the electrode without being fixed to the contact portion.

公开(公告)号：US20160189994A1

公开(公告)日：2016-06-30

申请号：US14975377

申请日：2015-12-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuharu SASAKI ,  Taketoshi TOMIOKA ,  Hiroki KISHI ,  Jisoo SUH

IPC: H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833 ,  H01L21/67109 ,  H02N13/00

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

Abstract translation: 静电吸附方法使用包括静电卡盘，聚焦环，供给单元的基板处理装置，该供给单元构造成将热传导介质供给到形成在聚焦环和静电卡盘之间的空间，以及多个电极， 在对应于聚焦环的静电卡盘中。 静电吸附方法包括：通过供给单元将传热介质供给到等离子体处理时间的空间，等离子体处理期间产生用于处理基板的等离子体，并且向多个电极施加不同的电压以吸引并保持聚焦环 静电卡盘等离子体处理期间以外的期间。

公开(公告)号：US20170066103A1

公开(公告)日：2017-03-09

申请号：US15248118

申请日：2016-08-26

Applicant: Tokyo Electron Limited

Inventor： Taketoshi TOMIOKA ,  Yasuharu SASAKI ,  Hiroki KISHI ,  Jisoo SUH

IPC: B24B37/32 ,  B24B37/20

CPC classification number: B24B37/32 ,  B24B37/20

Abstract: A focus ring is disposed on a peripheral portion of a lower electrode that receives a substrate thereon in a process container so as to contact a member of the lower electrode. The focus ring includes a contact surface that contacts the member of the lower electrode and is made of any one of a silicon-containing material, alumina and quartz. At least one of the contact surface of the focus ring and a contact surface of the member of the lower electrode has surface roughness of 0.1 micrometers or more.

Abstract translation: 聚焦环设置在下电极的周边部分上，该下电极在处理容器中接收基板，以便与下电极的部件接触。 聚焦环包括与下电极的构件接触并由含硅材料，氧化铝和石英中的任一种制成的接触表面。 聚焦环的接触表面和下电极的构件的接触表面中的至少一个具有0.1微米或更大的表面粗糙度。

公开(公告)号：US20140238609A1

公开(公告)日：2014-08-28

申请号：US14191953

申请日：2014-02-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taketoshi TOMIOKA ,  Taku GOHIRA ,  Toshiyuki MAKABE

IPC: H01L21/683 ,  H01L21/67

CPC classification number: H01L21/6831 ,  H01L21/67109 ,  H01L21/6875 ,  Y10T279/23

Abstract: A mounting table includes a base and an electrostatic chuck provided on the base. The base has first and second top surface on which the electrostatic chuck and a focus ring are respectively provided. The second top surface is provided below the first top surface. A coolant path in the base has central and peripheral paths extending below the first and second top surfaces, respectively. The peripheral path has a portion extending along a side surface toward the first top surface. The mounting surface has central and peripheral regions. The mounting surface has protrusions formed in a dot shape. The protrusions are formed such that a contact area between the protrusions of the peripheral region and the backside of an object per unit area becomes greater than a contact area between the protrusions of the central region and the backside of the object per unit area.

Abstract translation: 安装台包括设置在基座上的基座和静电卡盘。 基座具有第一和第二顶表面，静电卡盘和聚焦环分别设置有第一和第二顶表面。 第二顶表面设置在第一顶表面下方。 基座中的冷却剂路径分别具有在第一和第二顶表面下方延伸的中心和周边路径。 周边路径具有沿着侧表面朝向第一顶表面延伸的部分。 安装表面具有中央和周边区域。 安装表面具有形成为点状的突起。 这些突起形成为使得周边区域的突起与每单位面积的物体的背面之间的接触面积变得大于每单位面积的中心区域的突起与物体的背面之间的接触面积。

公开(公告)号：US20210319987A1

公开(公告)日：2021-10-14

申请号：US17220085

申请日：2021-04-01

Applicant: Tokyo Electron Limited

Inventor： Ryo CHIBA ,  Akira NAGAYAMA ,  Yasuharu SASAKI ,  Daiki SATOH ,  Taketoshi TOMIOKA

IPC: H01J37/32 ,  C23C16/455 ,  H01L21/683 ,  H01L21/67

Abstract: An edge ring to be disposed to encircle a substrate is provided. The edge ring includes a bottom used to define vertical heights that are from points on the circumference of a virtual circle, to the bottom of the edge ring, the virtual circle having a radius from a first point that is placed on a central axis of the edge ring, the first point being defined as the center of the virtual circle, the radius being half of a diameter ranging from an inner diameter to an outer diameter of the edge ring, and an absolute value indicative of a difference between a maximum value and a minimum value for the vertical heights being set to be less than or equal to a preset upper limit.

公开(公告)号：US20210005495A1

公开(公告)日：2021-01-07

申请号：US17028135

申请日：2020-09-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuharu SASAKI ,  Taketoshi TOMIOKA ,  Hiroki KISHI ,  Jisoo SUH

IPC: H01L21/683 ,  H02N13/00 ,  H01L21/67

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.

公开(公告)号：US20190221464A1

公开(公告)日：2019-07-18

申请号：US16361616

申请日：2019-03-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yasuharu SASAKI ,  Taketoshi TOMIOKA ,  Hiroki KISHI ,  Jisoo SUH

IPC: H01L21/683 ,  H02N13/00 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01L21/67109 ,  H02N13/00

Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.