PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

    公开(公告)号:US20210233794A1

    公开(公告)日:2021-07-29

    申请号:US17232226

    申请日:2021-04-16

    摘要: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.

    EDGE RING, STAGE AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20210319987A1

    公开(公告)日:2021-10-14

    申请号:US17220085

    申请日:2021-04-01

    摘要: An edge ring to be disposed to encircle a substrate is provided. The edge ring includes a bottom used to define vertical heights that are from points on the circumference of a virtual circle, to the bottom of the edge ring, the virtual circle having a radius from a first point that is placed on a central axis of the edge ring, the first point being defined as the center of the virtual circle, the radius being half of a diameter ranging from an inner diameter to an outer diameter of the edge ring, and an absolute value indicative of a difference between a maximum value and a minimum value for the vertical heights being set to be less than or equal to a preset upper limit.

    MOUNTING TABLE AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20210082733A1

    公开(公告)日:2021-03-18

    申请号:US17107678

    申请日:2020-11-30

    摘要: A mounting table, to which a voltage is applied, includes an electrostatic chuck having a mounting surface for mounting a target object and a rear surface opposite to the mounting surface, the electrostatic chuck having a first through-hole formed in the mounting surface; a base, which is in contact with the rear surface of the electrostatic chuck, having a second through-hole communicating with the first through-hole; a cylindrical spacer inserted in the second through-hole; and a pin accommodated in the first through-hole and the spacer. Gaps are formed between the pin and inner walls of the first through-hole and the spacer, and the gap between the first through-hole and the pin is greater than the gap between the spacer and the pin.

    SUBSTRATE SUPPORT AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20240339303A1

    公开(公告)日:2024-10-10

    申请号:US18749678

    申请日:2024-06-21

    IPC分类号: H01J37/32

    摘要: A substrate support comprises an electrostatic chuck configured to support a substrate and an edge ring and a base configured to support the electrostatic chuck. The electrostatic chuck includes a first region having a first upper surface and configured to support a substrate placed on the first upper surface, a second region having a second upper surface and configured to support an edge ring placed on the second upper surface, a first electrode disposed in the first region and to which a DC voltage is applied, a second electrode disposed below the first electrode and to which a first bias power is supplied, a third electrode disposed below the second electrode and to which the first bias power is supplied and a first gas supply line disposed between the second electrode and the third electrode.

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

    公开(公告)号:US20190088523A1

    公开(公告)日:2019-03-21

    申请号:US16129941

    申请日:2018-09-13

    摘要: A plasma processing apparatus includes a base, an electrostatic chuck provided on the base, and a dielectric layer. A bias power, whose magnitude is changed during plasma processing on a target substrate, is applied to the base. The electrostatic chuck has a central portion on which the target substrate is mounted and an outer peripheral portion on which a focus ring is mounted to surround the target substrate. The dielectric layer is provided between the outer peripheral portion of the electrostatic and the base or the focus ring and has an electrostatic capacitance that reduces a difference between an electrostatic capacitance of the central portion of the electrostatic chuck and an electrostatic capacitance of the outer peripheral portion of the electrostatic chuck.