公开(公告)号：US20150170963A1

公开(公告)日：2015-06-18

申请号：US14564569

申请日：2014-12-09

Applicant: Tokyo Electron Limited

Inventor： Tadahiro ISHIZAKA ,  Kotaro MIYATANI ,  Takuya KUROTORI

IPC: H01L21/768

CPC classification number: H01L21/76826 ,  C23C14/046 ,  C23C14/165 ,  H01J37/321 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/3426 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/31058 ,  H01L21/67109 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/68742 ,  H01L21/68792 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76877

Abstract: A semiconductor device manufacturing method includes: performing nitrogen plasma processing on an interlayer insulating film made of a fluorine containing carbon film having a recess formed in a surface thereof in a predetermined pattern; forming a Ru film directly on the fluorine containing carbon film subjected to the nitrogen plasma processing. The semiconductor device manufacturing method further includes filling a Cu film in the recess to form a Cu wiring.

Abstract translation: 一种半导体器件的制造方法，其特征在于，在由含氟碳膜构成的层间绝缘膜上，以规定的图案形成有表面的凹部，进行氮等离子体处理; 在经受氮等离子体处理的含氟碳膜上直接形成Ru膜。 半导体器件制造方法还包括在凹部中填充Cu膜以形成Cu布线。

公开(公告)号：US20160240374A1

公开(公告)日：2016-08-18

申请号：US15043242

申请日：2016-02-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru KASAI ,  Kotaro MIYATANI ,  Takuya KUROTORI ,  Kenichi KOTE ,  Yutaka FUJINO ,  Akira TANIHARA ,  Kohei KAWAMURA

IPC: H01L21/02

CPC classification number: H01L21/02345 ,  H01L21/0212 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/02315

Abstract: In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.

Abstract translation: 在与金属接触的氟碳系绝缘膜的形成方法中，在含氢气氛中对附着有水分的金属照射微波。 然后，对照射微波的金属进行基于碳氟化合物气体的等离子体CVD，形成绝缘膜。