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公开(公告)号：US20230215707A1
公开(公告)日：2023-07-06
申请号：US18122553
申请日：2023-03-16
IPC分类号： H01J37/32
CPC分类号： H01J37/32449 , H01J37/32724 , H01J37/32568 , H01J37/32174 , H01J2237/334
摘要： An etching apparatus includes: a chamber; a substrate support disposed in the chamber; one or more heaters disposed in the substrate support; a gas supply; a plasma generator; a controller configured to perform an etching process comprising a plurality of cycles; and a heater controller. Each cycle includes: controlling the gas supply to supply a precursor into the chamber, thereby forming a precursor layer on a substrate supported by the substrate support, the substrate including a film and a mask; and controlling the gas supply and the plasma generator to supply a process gas into the chamber and generate a plasma from the process gas in the chamber, thereby etching the film through the mask.
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公开(公告)号：US20230386800A1
公开(公告)日：2023-11-30
申请号：US18200910
申请日：2023-05-23
发明人： Tomohiko NIIZEKI , Maju TOMURA , Yoshihide KIHARA
IPC分类号： H01J37/32
CPC分类号： H01J37/32669 , H01J37/32568 , H01J2237/334
摘要： A substrate processing method includes: providing a substrate processing apparatus including a chamber, a substrate support that supports a substrate in the chamber, an upper electrode facing a center of the substrate, and a plurality of electromagnets arranged radially around the center of the upper electrode; selecting a polarity modification pattern to be used for the plurality of electromagnets during an etching; and generating plasma from a processing gas supplied into the chamber, and etching the substrate based on the polarity modification pattern.
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公开(公告)号：US20210233778A1
公开(公告)日：2021-07-29
申请号：US17160780
申请日：2021-01-28
发明人： Maju TOMURA , Tomohiko NIIZEKI , Takayuki KATSUNUMA , Hironari SASAGAWA , Yuta NAKANE , Shinya ISHIKAWA , Kenta ONO , Sho KUMAKURA , Yusuke TAKINO , Masanobu HONDA
IPC分类号： H01L21/311 , H01L21/3205 , H01L21/3213
摘要： An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.
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公开(公告)号：US20210202233A1
公开(公告)日：2021-07-01
申请号：US17128215
申请日：2020-12-21
发明人： Tomohiko NIIZEKI , Maju TOMURA , Yoshihide KIHARA
IPC分类号： H01L21/02 , H01L21/3065 , C23C16/455 , C23C16/50 , C23C16/52 , H01L21/67
摘要： A substrate processing method suppresses a shape abnormality of a pattern formed on a substrate. The substrate processing method executed by a substrate processing apparatus includes step a), step b), and step c). The step a) is a step of providing a substrate including an etching target film and a mask layer formed on the etching target film in which the mask layer has an opening. The step b) is a step of forming a protective film on an upper portion of an opening of the mask. The step c) is a step of etching the mask while suppressing a variation of an opening dimension of the upper portion of the opening by the protective film, and varying a dimension of a lower portion of the opening not covered by the protective film.
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公开(公告)号：US20230245898A1
公开(公告)日：2023-08-03
申请号：US18103207
申请日：2023-01-30
发明人： Tomohiko NIIZEKI , Maju TOMURA , Yoshihide KIHARA
IPC分类号： H01L21/311 , H01J37/32
CPC分类号： H01L21/31144 , H01J37/32449 , H01L21/31138 , H01J2237/332 , H01J2237/334
摘要： Provided is a plasma processing method performed with a plasma processing apparatus including a chamber. The method includes: (a) providing a substrate in the chamber, the substrate having an organic film and a mask on the organic film, the mask including a silicon-containing film and a carbon-containing film on the silicon-containing film; and (b) forming a plasma from a processing gas in the chamber, the processing gas including an oxygen-containing gas and a gas containing Si or W and a halogen. (b) includes: (b1) forming a protective film on at least the carbon-containing film of the mask; and (b2) etching the organic film through the mask having the protective film formed thereon.
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公开(公告)号：US20210151301A1
公开(公告)日：2021-05-20
申请号：US17094861
申请日：2020-11-11
IPC分类号： H01J37/32
摘要： A method for etching a film includes: supplying a precursor gas to the substrate, thereby forming a precursor layer on a substrate; and etching the film with a chemical species from plasma formed from a processing gas so as to increase a depth of the opening, and form a protective region from the precursor layer with the chemical species or another chemical species from the plasma. A plurality of cycles each including the supplying the precursor gas and the etching the film is executed. A temperature of the substrate during execution of the etching the film included in at least one cycle of the plurality of cycles and a temperature of the substrate during execution of the etching the film included in at least one other cycle of the plurality of cycles are set to be different from each other.
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公开(公告)号：US20200279753A1
公开(公告)日：2020-09-03
申请号：US16804939
申请日：2020-02-28
发明人： Tomohiko NIIZEKI , Yoshihide KIHARA
IPC分类号： H01L21/3213 , H01J37/18 , H01L21/311 , H01J37/32 , H01L21/3065
摘要： A substrate processing method includes etching a target film formed on a substrate through an opening of a mask formed on the target film with plasma generated from a mixed gas obtained by adding a gas having a carbonyl bond to a halogen-containing gas. The target film contains silicon and the mask is formed of a transition metal.
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