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公开(公告)号：US20150329964A1
公开(公告)日：2015-11-19
申请号：US14707663
申请日：2015-05-08
Applicant: TOKYO ELECTRON LIMITED
Inventor： Hideomi HANE , Takahito UMEHARA , Takehiro KASAMA , Tsubasa WATANABE
IPC: C23C16/455
CPC classification number: C23C16/45591 , C23C16/4405 , C23C16/4412 , C23C16/45519 , C23C16/45544 , C23C16/45551 , C23C16/45578
Abstract: There is provided a film forming apparatus including a raw material gas nozzle provided with gas discharge holes for discharging a mixed gas of a raw material gas and a carrier gas; a flow regulating plate portion extended along the longitudinal direction of the raw material gas nozzle; a central region configured to supply a separating gas from a center side within a vacuum container toward a substrate loading surface of a rotary table; a protuberance portion protruded from the flow regulating plate portion toward the rotary table at a position shifted toward a center side of the rotary table from the gas discharge holes; and a protuberance portion configured to restrain the separating gas from flowing between the flow regulating plate portion and the rotary table; and an exhaust port configured to vacuum exhaust the interior of the vacuum container.
Abstract translation: 提供一种成膜装置，包括：原料气体喷嘴，其设置有用于排出原料气体和载气的混合气体的气体排出孔; 沿着原料气体喷嘴的长度方向延伸的流量调节板部; 中央区域，被构造成将分离气体从真空容器内的中心侧朝向旋转台的基板装载面供给; 从气体排出孔朝向旋转台的中心侧移动的位置从流量调节板部向旋转台突出的突起部; 以及突起部，其构造成限制分离气体在流量调节板部分和旋转台之间流动; 以及排气口，其构造成真空排出真空容器的内部。
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公开(公告)号：US20210104421A1
公开(公告)日：2021-04-08
申请号：US17031785
申请日：2020-09-24
Applicant: Tokyo Electron Limited
Inventor： Masami OIKAWA , Tsubasa WATANABE , Tomoya HASEGAWA
Abstract: A control device controls an operation of a processing apparatus for performing a processing in a processing container that accommodates a substrate. The control device includes: a temperature acquisition unit configured to acquire a temperature inside the processing container; a storage unit configured to store relationship information indicating a relationship between the temperature inside the processing container and an etching rate, and film thickness information including a cumulative film thickness of a deposited film inside the processing container; a rate calculator configured to calculate an etching rate of the deposited film based on the temperature acquired by the temperature acquisition unit and the relationship information stored in the storage unit; and a time calculator configured to calculate an etching time for removing the deposited film based on the etching rate calculated by the rate calculator and the film thickness information stored in the storage unit.
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Patent Agency Ranking
公开(公告)号：US20210180182A1
公开(公告)日：2021-06-17
申请号：US17189706
申请日：2021-03-02
Applicant: Tokyo Electron Limited
Inventor： Takahito UMEHARA , Masato KOAKUTSU , Tsubasa WATANABE
Abstract: There is provision of a method of cleaning an exhaust pipe of a film forming apparatus for removing a component adhering to the exhaust pipe which is generated from a source gas for forming film supplied from a gas supply part to a processing chamber of the film forming apparatus. The method includes a step of supplying a cleaning gas from the gas supply part to the exhaust pipe via the processing chamber while the film forming apparatus is operating but a film forming process is not performed in the processing chamber, in order to remove the component by causing the component to vaporize upon reacting with the cleaning gas. The cleaning gas to be supplied is capable of causing the component adhering to the exhaust pipe to change into an evaporable substance by chemical reaction in an atmosphere inside the exhaust pipe.
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公开(公告)号：US20190096664A1
公开(公告)日：2019-03-28
申请号：US16197807
申请日：2018-11-21
Applicant: TOKYO ELECTRON LIMITED
Inventor： Tsubasa WATANABE , Yamato TONEGAWA
IPC: H01L21/02 , C07F7/00 , C23C16/458 , C23C16/44 , C23C16/455 , C23C16/34 , H01L27/11582
CPC classification number: H01L21/02211 , C07F7/00 , C23C16/345 , C23C16/4408 , C23C16/45553 , C23C16/4584 , H01L21/0217 , H01L21/0228 , H01L27/11582
Abstract: A method of forming a silicon-containing film includes: an adsorption step of supplying a silicon-containing gas represented by a general formula XSiCl3 (wherein X is an element whose bonding energy with Si is smaller than bonding energy of a Si—Cl bond) into a processing chamber accommodating substrates to cause the silicon-containing gas to be adsorbed to a surface of each of the substrates; and a reaction step of supplying a reaction gas reacting with the silicon-containing gas into the processing chamber to cause the silicon-containing gas adsorbed to the surface of each of the substrates to react with the reaction gas.
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公开(公告)号：US20190078198A1
公开(公告)日：2019-03-14
申请号：US16120596
申请日：2018-09-04
Applicant: Tokyo Electron Limited
Inventor： Takahito UMEHARA , Masato KOAKUTSU , Tsubasa WATANABE
Abstract: There is provision of a method of cleaning an exhaust pipe of a film forming apparatus for removing a component adhering to the exhaust pipe which is generated from a source gas for forming film supplied from a gas supply part to a processing chamber of the film forming apparatus. The method includes a step of supplying a cleaning gas directly, from a cleaning gas supply part disposed near a joint between the processing chamber and the exhaust pipe, to the exhaust pipe without passing through the processing chamber, in order to remove the component by causing the component to vaporize upon reacting with the cleaning gas. The cleaning gas to be supplied is capable of causing the component adhering to the exhaust pipe to change into an evaporable substance by chemical reaction in an atmosphere inside the exhaust pipe.
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公开(公告)号：US20210310739A1
公开(公告)日：2021-10-07
申请号：US17216694
申请日：2021-03-30
Applicant: Tokyo Electron Limited
Inventor： Tomoya HASEGAWA , Tsubasa WATANABE
Abstract: A cleaning method introduces a cleaning gas containing hydrogen fluoride into a reaction tube included in a heat treatment apparatus and having a furnace portion at one end in a state where an inside of the reaction tube with the furnace port being closed by a lid is maintained at a temperature at which water exists as a liquid film and the furnace port is locally heated, thereby removing a deposit from the reaction tube.
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公开(公告)号：US20180144931A1
公开(公告)日：2018-05-24
申请号：US15820489
申请日：2017-11-22
Applicant: TOKYO ELECTRON LIMITED
Inventor： Tsubasa WATANABE , Yamato TONEGAWA
IPC: H01L21/02 , H01L27/11582 , C23C16/455 , C23C16/34 , C23C16/44 , C23C16/458
CPC classification number: H01L21/02211 , C07F7/00 , C23C16/345 , C23C16/4408 , C23C16/45553 , C23C16/4584 , H01L21/0217 , H01L21/0228 , H01L27/11582
Abstract: A method of forming a silicon-containing film includes: an adsorption step of supplying a silicon-containing gas represented by a general formula XSiCl3 (wherein X is an element whose bonding energy with Si is smaller than bonding energy of a Si—Cl bond) into a processing chamber accommodating substrates to cause the silicon-containing gas to be adsorbed to a surface of each of the substrates; and a reaction step of supplying a reaction gas reacting with the silicon-containing gas into the processing chamber to cause the silicon-containing gas adsorbed to the surface of each of the substrates to react with the reaction gas.
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