公开(公告)号：US20240212987A1

公开(公告)日：2024-06-27

申请号：US18433862

申请日：2024-02-06

Applicant: Tokyo Electron Limited

Inventor： Atsushi SAWACHI ,  Kota ISHIHARADA ,  Hideaki YAKUSHIJI ,  Yoshiyasu SATO ,  Shinya MORIKITA ,  Shota YOSHIMURA ,  Toshihiro TSURUTA ,  Kazuaki TAKAAI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32834 ,  H01L21/67017 ,  H01J2237/334

Abstract: A gas supply system includes: gas supply flow paths for independently supplying gas to a processing chamber; a flow rate controller arranged in each gas supply flow path; a primary-side valve arranged on an upstream side of the flow rate controller; a primary-side gas exhaust flow path branched between the primary-side valve and the flow rate controller; a primary-side exhaust valve arranged in the primary-side gas exhaust flow path; a secondary-side valve arranged on a downstream side of the flow rate controller; a secondary-side gas exhaust flow path branched between the secondary-side valve and the flow rate controller; and a secondary-side exhaust valve arranged in the secondary-side gas exhaust flow path. The flow rate controller includes: a control valve connected to the primary-side valve and the secondary-side valve; and a control-side orifice arranged between the control valve and the secondary-side valve.