公开(公告)号：US20190138033A1

公开(公告)日：2019-05-09

申请号：US16180047

申请日：2018-11-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi SAWACHI ,  Norihiko AMIKURA

IPC: G05D7/06 ,  G05D11/13 ,  C23C16/52

Abstract: A gas supply system includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes, a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes, and a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.

公开(公告)号：US20180180509A1

公开(公告)日：2018-06-28

申请号：US15739027

申请日：2016-07-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi SAWACHI ,  Norihiko AMIKURA

IPC: G01M3/28 ,  H01L21/67

Abstract: Leaks in valves provided in a plurality of pipes connected to a plurality of gas sources are inspected. In a method of an embodiment, a first valve provided in a first pipe connected to a gas source is closed, and a second valve provided in a first pipe on a downstream side of the first valve is opened. A pressure increase is detected by a pressure gauge on a downstream side of the first pipe. In addition, the first valve is opened, and the second valve is closed. A pressure increase is detected by a pressure gauge on a downstream side of the first pipe.

公开(公告)号：US20240261918A1

公开(公告)日：2024-08-08

申请号：US18638830

申请日：2024-04-18

Applicant: Tokyo Electron Limited

Inventor： Atsushi SAWACHI ,  Ichiro SONE ,  Suguru SATO ,  Takuya NISHIJIMA

IPC: B23Q3/155 ,  H01L21/687

CPC classification number: B23Q3/1556 ,  H01L21/68785

Abstract: A part replacement system includes a part storage device configured to store an unused consumable part, and a replacement device that is connected to a processing device and the part storage device, the replacement device being configured to replace a used consumable part installed in the processing device with the unused consumable part stored in the part storage device. The replacement device is moved to a position of the processing device having the used consumable part that requires replacement, and the replacement device is connected to the processing device, and the part storage device is moved to a position of the replacement device connected to the processing device having the used consumable part that requires replacement, and the part storage device is connected to the replacement device.

公开(公告)号：US20220122818A1

公开(公告)日：2022-04-21

申请号：US17504578

申请日：2021-10-19

Applicant: Tokyo Electron Limited

Inventor： Atsushi SAWACHI ,  Jun HIROSE ,  Takuya NISHIJIMA ,  Ichiro SONE ,  Suguru SATO

IPC: H01J37/32

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus comprise: a first chamber including a sidewall providing an opening, the first chamber further including a movable part movable upward and downward within the first chamber; a substrate support disposed within the first chamber; a second chamber disposed within the first chamber and defining, together with the substrate support, a processing space in which a substrate mounted on the substrate support is processed, the second chamber being separable from the first chamber and transportable between an inner space of the first chamber and the outside of the first chamber via the opening; a clamp releasably fixing the second chamber to the movable part extending above the second chamber; a release mechanism configured to release the fixing of the second chamber by the clamp; and a lift mechanism configured to move the movable part upward and downward.

公开(公告)号：US20210216088A1

公开(公告)日：2021-07-15

申请号：US17215477

申请日：2021-03-29

Applicant: Tokyo Electron Limited

Inventor： Atsushi SAWACHI ,  Norihiko AMIKURA

IPC: G05D7/06 ,  G05D11/13 ,  C23C16/52 ,  H01J37/32

Abstract: A gas supply system includes a first flow channel connected to a first gas source of a first gas, formed inside a ceiling or a sidewall of the treatment container, and communicating with the treatment space through a plurality of first gas discharge holes, a second flow channel connected to a second gas source of a second gas, formed inside the ceiling or the sidewall of the treatment container, and communicating with the treatment space through a plurality of second gas discharge holes, and a plurality of first diaphragm valves, wherein each of the first diaphragm valves is provided between the first flow channel and the first gas discharge hole to correspond to the first gas discharge hole.

公开(公告)号：US20230230812A1

公开(公告)日：2023-07-20

申请号：US18098313

申请日：2023-01-18

Applicant: Tokyo Electron Limited

Inventor： Atsushi SAWACHI

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32623 ,  H01J37/32816

Abstract: A system includes: gas supply flow paths for supplying independently a main gas to a processing chamber; a flow rate control valve disposed in each gas supply flow path; an additive-gas flow path connected to the flow rate control valve; a valve for addition disposed in the additive-gas flow path; and a controller for controlling the flow rate control valve and the valve for addition to execute controls of: calculating flow rates of the main gas and an additive gas to be mixed with the main gas; calculating a total of the flow rates; calculating an internal pressure of each gas supply flow path with the total flow rate, and first and second relationships between previously acquired gas flow rates and gas pressures of the main gas and the additive gas, respectively; calculating an internal pressure ratio; and proportionally controlling openings of flow rate control valves based on the ratio.

公开(公告)号：US20210175055A1

公开(公告)日：2021-06-10

申请号：US17113031

申请日：2020-12-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi SAWACHI ,  Ichiro SONE ,  Takuya NISHIJIMA ,  Suguru SATO

IPC: H01J37/32 ,  G01J3/443

Abstract: A measuring device for a vacuum processing apparatus including a processing chamber having a first gate for loading and unloading a substrate and a second gate different from the first gate is provided. The measuring device includes a case having art opening that is sized to correspond to the second gate of the processing chamber and is airtightly attachable to the second gate, a decompressing mechanism configured to reduce a pressure in the case, and a measuring mechanism accommodated in the case and configured to measure a state in the processing chamber through the opening in a state where the pressure in the case is reduced by the decompressing mechanism.

公开(公告)号：US20210111004A1

公开(公告)日：2021-04-15

申请号：US16979812

申请日：2019-06-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi SAWACHI

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: A flow rate controller includes a valve and a valve control unit. The valve is configured to control a flow rate of a gas supplied to a processing device. The valve control unit is configured to open the valve to start a control of the flow rate of the gas when the processing device has issued a command that instructs a start of supplying gas; calculate a cumulative flow amount by integrating the flow rate of the gas at every predetermined cycle from a time point at which the command is issued; and close the valve to stop the control of the flow rate of the gas at a time point at which the calculated cumulative flow amount has reached a predetermined target cumulative flow amount.

公开(公告)号：US20180122620A1

公开(公告)日：2018-05-03

申请号：US15854066

申请日：2017-12-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Norihiko AMIKURA ,  Norikazu SASAKI ,  Atsushi SAWACHI

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/3244 ,  H01J37/32449 ,  H01L21/31116

Abstract: Processing gases respectively supplied from multiple gas supply lines into a processing vessel can be switched at a high speed in a uniform manner. A plasma processing apparatus includes the processing vessel configured to perform therein a plasma process to a target substrate; and a gas inlet member including first gas discharge holes and second gas discharge holes which are alternately arranged to be adjacent to each other and respectively communicate with a first gas supply line and a second gas supply line, which are switchable. Further, the first gas discharge holes and the second gas discharge holes independently and respectively introduce a first processing gas and a second processing gas, which are respectively supplied from the first gas supply line and the second gas supply line and used in the plasma process, into the processing vessel. Both of the first gas discharge holes and the second gas discharge holes are arranged on a same line extended from a center of the gas inlet member toward a periphery of the gas inlet member along a diameter direction of the gas inlet member.

公开(公告)号：US20160299514A1

公开(公告)日：2016-10-13

申请号：US15080692

申请日：2016-03-25

Applicant: Tokyo Electron Limited

Inventor： Kumiko ONO ,  Hiroshi TSUJIMOTO ,  Atsushi SAWACHI ,  Norihiko AMIKURA ,  Norikazu SASAKI ,  Yoshitaka KAWAGUCHI

IPC: G05D16/20

CPC classification number: G05D7/0647

Abstract: A gas supply control method uses a pressure control flowmeter and first and second valves provided upstream and downstream, respectively, of the pressure control flowmeter in a gas supply line. The pressure control flowmeter includes a control valve and an orifice. The gas supply control method includes maintaining a pressure P1 of a first gas supply pipe between the orifice and the control valve and a pressure P2 of a second gas supply pipe between the orifice and the second valve so as to satisfy P1>2×P2. The supply of gas is controlled by controlling the opening and closing of the second valve with the first valve being open and the control valve being controlled. A volume V1 of the first gas supply pipe and a volume V2 of the second gas supply pipe have a relationship of V1/V2≧9.

Abstract translation: 气体供给控制方法使用压力控制用流量计和分别设置在气体供给管路中的压力控制用流量计的上游和下游的第一阀和第二阀。 压力控制流量计包括控制阀和孔。 气体供给控制方法包括：保持孔和控制阀之间的第一气体供给管的压力P1和孔与第二阀之间的第二气体供给管的压力P2，以满足P1> 2×P2。 通过控制第一阀打开并控制控制阀来控制第二阀的打开和关闭来控制气体供应。 第一气体供给管的体积V1和第二气体供给管的体积V2具有V1 /V2≥9的关系。