公开(公告)号：US10157784B2

公开(公告)日：2018-12-18

申请号：US15428749

申请日：2017-02-09

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung Yu ,  Manabu Oie ,  Kaoru Maekawa ,  Cory Wajda ,  Gerrit J. Leusink ,  Yuuki Kikuchi ,  Hiroaki Kawasaki ,  Hiroyuki Nagai

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for integration of conformal barrier layers and Ru metal liners with Cu metallization in semiconductor manufacturing are described in several embodiments. According to one embodiment, the method includes providing a substrate containing a recessed feature, depositing a barrier layer in the recessed feature, depositing a Ru metal liner on the barrier layer, and exposing the substrate to an oxidation source gas to oxidize the barrier layer through the Ru metal liner. The method further includes filling the recessed feature with CuMn metal using an ionized physical vapor deposition (IPVD) process, heat-treating the substrate to diffuse Mn from the CuMn metal to the oxidized barrier layer, and reacting the diffused Mn with the oxidized barrier layer to form a Mn-containing diffusion barrier.

公开(公告)号：US20170236752A1

公开(公告)日：2017-08-17

申请号：US15428749

申请日：2017-02-09

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung L. Yu ,  Manabu Oie ,  Kaoru Maekawa ,  Cory Wajda ,  Gerrit J. Leusink ,  Yuuki Kikuchi ,  Hiroaki Kawasaki ,  Hiroyuki Nagai

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/528

CPC classification number: H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238

Abstract: Methods for integration of conformal barrier layers and Ru metal liners with Cu metallization in semiconductor manufacturing are described in several embodiments. According to one embodiment, the method includes providing a substrate containing a recessed feature, depositing a barrier layer in the recessed feature, depositing a Ru metal liner on the barrier layer, and exposing the substrate to an oxidation source gas to oxidize the barrier layer through the Ru metal liner. The method further includes filling the recessed feature with CuMn metal using an ionized physical vapor deposition (IPVD) process, heat-treating the substrate to diffuse Mn from the CuMn metal to the oxidized barrier layer, and reacting the diffused Mn with the oxidized barrier layer to form a Mn-containing diffusion barrier.