公开(公告)号：US11742228B2

公开(公告)日：2023-08-29

申请号：US17189691

申请日：2021-03-02

Applicant: Tokyo Electron Limited

Inventor： Risako Matsuda ,  Shinobu Kinoshita ,  Manabu Oie ,  Keita Shouji

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/66

CPC classification number: H01L21/67253 ,  H01L21/0262 ,  H01L21/3065 ,  H01L22/10

Abstract: A substrate processing method of processing a substrate using a gas supplied to a chamber includes: (a) setting a threshold value of a pressure of the gas, which is a control target in a flow rate controller configured to measure the pressure of the gas supplied to the chamber and control a flow rate of the gas; (b) supplying the gas into the chamber; (c) measuring the pressure of the gas by the flow rate controller; (d) stopping the supply of the gas into of the chamber; (e) calculating a time when the pressure of the gas measured in (c) becomes equal to or higher than the threshold value; and (f) calculating a total flow rate of the gas supplied into the chamber based on the pressure of the gas measured in (c) and the time calculated in (e).

公开(公告)号：US11899476B2

公开(公告)日：2024-02-13

申请号：US17176288

申请日：2021-02-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Risako Matsuda ,  Shinichiro Hayasaka ,  Manabu Oie ,  Keita Shouji

IPC: G01F1/34 ,  G05D7/06 ,  G01F7/00 ,  G01F1/86 ,  G01F1/50 ,  G01F15/00 ,  G01F15/02

CPC classification number: G05D7/0647 ,  G01F1/34 ,  G01F1/50 ,  G01F1/86 ,  G01F7/005 ,  G01F15/005 ,  G01F15/02 ,  G05D7/0664

Abstract: A gas flow measuring method is provided. A first pressure of a gas in a first and a second flow path is measured. A gas is supplied to the first and the second flow paths by repeating gas supply and stop of the gas supply, and a gas supply time is measured. A second pressure and a temperature of the gas in the first and the second flow path is measured, a third pressure of the gas in the second flow path is measured after the gas is exhausted from the second flow path, and a fourth pressure of the gas in the first and the second flow path is measured. The gas flow supplied to the first and the second flow path is calculated based on the first to fourth pressures and the temperature, and corrected based on a theoretical gas supply time and a calculated average time.

公开(公告)号：US09607888B2

公开(公告)日：2017-03-28

申请号：US14613086

申请日：2015-02-03

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung Yu ,  Toshio Hasegawa ,  Tadahiro Ishizaka ,  Manabu Oie ,  Fumitaka Amano ,  Steven Consiglio ,  Cory Wajda ,  Kaoru Maekawa ,  Gert J. Leusink

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  C23C16/04 ,  C23C16/34

CPC classification number: H01L21/76846 ,  C23C16/045 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for integration of atomic layer deposition (ALD) of barrier layers and chemical vapor deposition (CVD) of Ru liners for Cu filling of narrow recessed features for semiconductor devices are disclosed in several embodiments. According to one embodiment, the method includes providing a substrate containing a recessed feature, depositing a conformal barrier layer by ALD in the recessed feature, where the barrier layer contains TaN or TaAlN, depositing a conformal Ru liner by CVD on the barrier layer, and filling the recessed feature with Cu metal.

公开(公告)号：US20170236752A1

公开(公告)日：2017-08-17

申请号：US15428749

申请日：2017-02-09

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung L. Yu ,  Manabu Oie ,  Kaoru Maekawa ,  Cory Wajda ,  Gerrit J. Leusink ,  Yuuki Kikuchi ,  Hiroaki Kawasaki ,  Hiroyuki Nagai

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/528

CPC classification number: H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883 ,  H01L23/5283 ,  H01L23/53238

Abstract: Methods for integration of conformal barrier layers and Ru metal liners with Cu metallization in semiconductor manufacturing are described in several embodiments. According to one embodiment, the method includes providing a substrate containing a recessed feature, depositing a barrier layer in the recessed feature, depositing a Ru metal liner on the barrier layer, and exposing the substrate to an oxidation source gas to oxidize the barrier layer through the Ru metal liner. The method further includes filling the recessed feature with CuMn metal using an ionized physical vapor deposition (IPVD) process, heat-treating the substrate to diffuse Mn from the CuMn metal to the oxidized barrier layer, and reacting the diffused Mn with the oxidized barrier layer to form a Mn-containing diffusion barrier.

公开(公告)号：US20150221550A1

公开(公告)日：2015-08-06

申请号：US14613086

申请日：2015-02-03

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung Yu ,  Toshio Hasegawa ,  Tadahiro Ishizaka ,  Manabu Oie ,  Fumitaka Amano ,  Steven Consiglio ,  Cory Wajda ,  Kaoru Maekawa ,  Gert J. Leusink

IPC: H01L21/768

CPC classification number: H01L21/76846 ,  C23C16/045 ,  C23C16/34 ,  H01L21/28562 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for integration of atomic layer deposition (ALD) of barrier layers and chemical vapor deposition (CVD) of Ru liners for Cu filling of narrow recessed features for semiconductor devices are disclosed in several embodiments. According to one embodiment, the method includes providing a substrate containing a recessed feature, depositing a conformal barrier layer by ALD in the recessed feature, where the barrier layer contains TaN or TaAlN, depositing a conformal Ru liner by CVD on the barrier layer, and filling the recessed feature with Cu metal.

Abstract translation: 在几个实施例中公开了用于整合用于半导体器件的窄凹陷特征的Cu填充的Ru衬垫的阻挡层的原子层沉积（ALD）和化学气相沉积（CVD）的方法。 根据一个实施方案，该方法包括提供含有凹陷特征的基底，在凹陷特征中通过ALD沉积共形阻挡层，其中阻挡层包含TaN或TaAlN，通过CVD在阻挡层上沉积共形Ru衬垫;以及 用Cu金属填充凹陷特征。

公开(公告)号：US20210263540A1

公开(公告)日：2021-08-26

申请号：US17176288

申请日：2021-02-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Risako Matsuda ,  Shinichiro Hayasaka ,  Manabu Oie ,  Keita Shouji

IPC: G05D7/06

Abstract: A gas flow measuring method is provided. A first pressure of a gas in a first and a second flow path is measured. A gas is supplied to the first and the second flow paths by repeating gas supply and stop of the gas supply, and a gas supply time is measured. A second pressure and a temperature of the gas in the first and the second flow path is measured, a third pressure of the gas in the second flow path is measured after the gas is exhausted from the second flow path, and a fourth pressure of the gas in the first and the second flow path is measured. The gas flow supplied to the first and the second flow path is calculated based on the first to fourth pressures and the temperature, and corrected based on a theoretical gas supply time and a calculated average time.

公开(公告)号：US10157784B2

公开(公告)日：2018-12-18

申请号：US15428749

申请日：2017-02-09

Applicant: Tokyo Electron Limited

Inventor： Kai-Hung Yu ,  Manabu Oie ,  Kaoru Maekawa ,  Cory Wajda ,  Gerrit J. Leusink ,  Yuuki Kikuchi ,  Hiroaki Kawasaki ,  Hiroyuki Nagai

IPC: H01L21/285 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for integration of conformal barrier layers and Ru metal liners with Cu metallization in semiconductor manufacturing are described in several embodiments. According to one embodiment, the method includes providing a substrate containing a recessed feature, depositing a barrier layer in the recessed feature, depositing a Ru metal liner on the barrier layer, and exposing the substrate to an oxidation source gas to oxidize the barrier layer through the Ru metal liner. The method further includes filling the recessed feature with CuMn metal using an ionized physical vapor deposition (IPVD) process, heat-treating the substrate to diffuse Mn from the CuMn metal to the oxidized barrier layer, and reacting the diffused Mn with the oxidized barrier layer to form a Mn-containing diffusion barrier.