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4 条记录 (耗时 0.025 秒)

    Process for providing clean lift-off of sputtered thin film layers
    1.
    发明授权
    Process for providing clean lift-off of sputtered thin film layers 失效
    提供溅射薄膜层清洁剥离的工艺

    公开(公告)号：US5705432A

    公开(公告)日：1998-01-06

    申请号：US566197

    申请日：1995-12-01

    申请人： Kusol Lee ,  Tom Quach ,  Danny Li ,  Liping D. Hou ,  Sam Chung ,  Tom Y. Chi

    发明人： Kusol Lee ,  Tom Quach ,  Danny Li ,  Liping D. Hou ,  Sam Chung ,  Tom Y. Chi

    IPC分类号： H01L21/027 ,  H01L21/465

    CPC分类号： H01L21/0272 ,  Y10S438/951

    摘要： A unique photoresist process is provided which achieves clean and complete lift-off of a thin film layer such as a sputtered thin film formed on a photoresist which is formed above a semiconductor substrate. The process of the present invention relies on a reentrant photoresist profile which breaks the continuity of the thin film layer. Accordingly, the process of the present invention ensures a clean lift-off. The desired photoresist profile which breaks the continuity of the thin film layer can be obtained by a typical photoresist process preceded by an oxidation process that takes place on the surface of the semiconductor substrate. The oxidation process provides a thin native oxide layer with thickness ranging from about 30 to 50 .ANG.. No extra processing steps involving dielectric film deposition and etch are required to achieve clean lift-off. Nevertheless, the process of the present invention ensures the clean lift-off of the thin film layer. Accordingly, the process of the present invention provides good visual and electrical yields.

    摘要翻译： 提供了一种独特的光刻胶工艺，其实现了清洁和完全剥离薄膜层，例如形成在半导体衬底上的光致抗蚀剂上形成的溅射薄膜。 本发明的方法依赖于破坏薄膜层的连续性的可重入光致抗蚀剂轮廓。 因此，本发明的方法确保了清洁的剥离。 可以通过在半导体衬底的表面上发生的氧化工艺之前的典型的光致抗蚀剂工艺来获得破坏薄膜层的连续性的期望的光致抗蚀剂轮廓。 氧化过程提供厚度范围为约30至50安培的薄的天然氧化物层。 不需要涉及介电膜沉积和蚀刻的额外处理步骤来实现干净的剥离。 然而，本发明的方法确保了薄膜层的清洁剥离。 因此，本发明的方法提供良好的视觉和电产量。

    Method of fabricating a self-aligned double recess gate profile
    2.
    发明授权
    Method of fabricating a self-aligned double recess gate profile 失效
    制造自对准双凹槽浇口型材的方法

    公开(公告)号：US5556797A

    公开(公告)日：1996-09-17

    申请号：US453676

    申请日：1995-05-30

    申请人： Tom Y. Chi ,  Liping D. Hou ,  Kusol Lee ,  Danny Li ,  Ishver K. Naik ,  Tom Quach

    发明人： Tom Y. Chi ,  Liping D. Hou ,  Kusol Lee ,  Danny Li ,  Ishver K. Naik ,  Tom Quach

    IPC分类号： H01L21/338 ,  H01L29/812 ,  H01L21/8258

    CPC分类号： H01L29/66871 ,  H01L29/8128

    摘要： A method of fabricating a self-aligned double gate recess profile in a semiconductor substrate is disclosed in which a first mask layer is formed over the substrate. A second mask layer having an opening is formed over the first mask layer. An opening at least as wide as the second mask layer's opening is formed through the first mask layer to expose the substrate beneath the second mask layer's opening. A first recess is etched in the semiconductor through the second mask layer's opening. The first mask layer's opening is then uniformly expanded and a wider recess, aligned to the first recess, is then formed in the semiconductor. The method is particularly applicable to the formation of self-aligned gate and channel recesses in a GaAs MESFET.

    摘要翻译： 公开了一种在半导体衬底中制造自对准双栅凹槽轮廓的方法，其中在衬底上形成第一掩模层。 在第一掩模层上形成具有开口的第二掩模层。 通过第一掩模层形成至少与第二掩模层开口一样宽的开口，以将第二掩模层开口下方的基板曝光。 通过第二掩模层的开口在半导体中蚀刻第一凹槽。 然后将第一掩模层的开口均匀地膨胀，然后在半导体中形成与第一凹部对准的更宽的凹部。 该方法特别适用于GaAs MESFET中自对准栅极和沟槽的形成。