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1.发明授权Copolymer and composition for semiconductor lithography and process for producing the copolymer 有权用于半导体光刻的共聚物和组合物以及用于制备共聚物的方法公开(公告)号：US08859180B2
公开(公告)日：2014-10-14
申请号：US12311993
申请日：2007-10-19
申请人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
发明人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
IPC分类号： G03F7/039 , C08F2/06 , C08F224/00 , C08F220/18 , C08F216/38
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F2220/283 , G03F7/2041
摘要： [Task to Be Achieved]To provide a chemically amplified type positive copolymer for semiconductor lithography, which has eliminated the problems of prior art, has a high development contrast, and has excellent resolution in fine-pattern formation; a composition for semiconductor lithography which contains the copolymer; and a process for producing the copolymer.[Means for Achievement]The copolymer for semiconductor lithography according to the present invention is a copolymer which has at least (A) a repeating unit having a structure which has an alkali-soluble group protected by an acid-labile, dissolution-suppressing group, (B) a repeating group having a lactone structure and (C) a repeating group having an alcoholic hydroxyl group and which is characterized by having an acid value of 0.01 mmol/g or less as determined by dissolving the copolymer in a solvent and subjecting the solution to neutralization titration with a solution of an alkali metal hydroxide using Bromothymol Blue as an indicator.
摘要翻译： [要实现的任务]为了提供半导体光刻的化学放大型正共聚物，其消除了现有技术的问题，具有高显影对比度，并且在精细图案形成中具有优异的分辨率; 含有共聚物的半导体光刻用组合物; 和共聚物的制造方法。 [实现方法]本发明的半导体光刻用共聚物是至少具有（A）具有由酸不稳定，溶解抑制基团保护的碱溶性基团的结构的重复单元的共聚物， （B）具有内酯结构的重复基团和（C）具有醇羟基的重复基团，其特征在于通过将共聚物溶解在溶剂中而使酸值为0.01mmol / g以下， 使用溴百里酚蓝作为指示剂的碱金属氢氧化物溶液中和滴定溶液。
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2.发明申请Copolymer and composition for semiconductor lithography and process for producing the copolymer 有权用于半导体光刻的共聚物和组合物以及用于制备共聚物的方法公开(公告)号：US20100062371A1
公开(公告)日：2010-03-11
申请号：US12311993
申请日：2007-10-19
申请人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
发明人： Tomo Oikawa , Takayoshi Okada , Masaaki Kudo , Takanori Yamagishi
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , C08F2220/283 , G03F7/2041
摘要： [Task to be Achieved] To provide a chemically amplified type positive copolymer for semiconductor lithography, which has eliminated the problems of prior art, has a high development contrast, and has excellent resolution in fine-pattern formation; a composition for semiconductor lithography which contains the copolymer; and a process for producing the copolymer.[Means for Achievement] The copolymer for semiconductor lithography according to the present invention is a copolymer which has at least (A) a repeating unit having a structure which has an alkali-soluble group protected by an acid-labile, dissolution-suppressing group, (B) a repeating group having a lactone structure and (C) a repeating group having an alcoholic hydroxyl group and which is characterized by having an acid value of 0.01 mmol/g or less as determined by dissolving the copolymer in a solvent and subjecting the solution to neutralization titration with a solution of an alkali metal hydroxide using Bromothymol Blue as an indicator.
摘要翻译： [要实现的目的]为了提供消除现有技术问题的化学放大型半导体光刻用正共聚物，具有高显影对比度，并且在精细图案形成中具有优异的分辨率; 含有共聚物的半导体光刻用组合物; 和共聚物的制造方法。 [实现方法]本发明的半导体光刻用共聚物是至少具有（A）具有由酸不稳定，溶解抑制基团保护的碱溶性基团的结构的重复单元的共聚物， （B）具有内酯结构的重复基团和（C）具有醇羟基的重复基团，其特征在于通过将共聚物溶解在溶剂中而使酸值为0.01mmol / g以下， 使用溴百里酚蓝作为指示剂的碱金属氢氧化物溶液中和滴定溶液。
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公开(公告)号：US08211615B2
公开(公告)日：2012-07-03
申请号：US12445948
申请日：2007-10-30
申请人： Takanori Yamagishi , Tomo Oikawa , Takayoshi Okada
发明人： Takanori Yamagishi , Tomo Oikawa , Takayoshi Okada
IPC分类号： G03F7/039 , C08F224/00 , C08F222/14 , C08F222/20
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , G03F7/2041 , Y10S430/111 , Y10S430/115
摘要： The present invention provides a copolymer which can prevent problems associated with immersion lithography (including occurrence of a pattern defect such as water mark, and variation in sensitivity or abnormal patterning due to elution of an additive such as a radiation-sensitive acid-generator) and which provides surface characteristics suitable for immersion lithography, and a composition containing the copolymer.The copolymer for immersion lithography has, at least, a repeating unit (A) that generates an alkali-soluble group by removing protecting group through action of an acid, and a repeating unit (B) having a lactone structure, wherein, when a solution of the copolymer in propylene glycol monomethyl ether acetate (hereinafter may be abbreviated as “PGMEA”) is applied to a wafer and then heated to form a thin film, and a 15-μL droplet of pure water is added onto the thin film, the inclination of the wafer at the time when the water droplet starts to move is 35° or less, or the contact angle of the top edge of the water droplet at the time when the water droplet starts to move is 64° or more.
摘要翻译： 本发明提供一种共聚物，其能够防止与浸渍光刻相关的问题（包括图案缺陷如水痕的发生，以及由于诸如辐射敏感的酸发生剂等添加剂的洗脱引起的灵敏度或异常图案的变化） 其提供适于浸渍光刻的表面特性，以及含有该共聚物的组合物。 用于浸渍光刻的共聚物至少具有通过酸的作用除去保护基而产生碱溶性基团的重复单元（A）和具有内酯结构的重复单元（B），其中当溶液 的丙二醇单甲醚乙酸酯共聚物（以下简称为“PGMEA”）施加到晶片上，然后加热形成薄膜，在薄膜上加入15μL的纯水滴， 当水滴开始移动时，晶片的倾斜度为35°以下，或水滴开始移动时的水滴顶端的接触角为64°以上。
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公开(公告)号：US20100047710A1
公开(公告)日：2010-02-25
申请号：US12445948
申请日：2007-10-30
申请人： Takanori Yamagishi , Tomo Oikawa , Takayoshi Okada
发明人： Takanori Yamagishi , Tomo Oikawa , Takayoshi Okada
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/28 , G03F7/2041 , Y10S430/111 , Y10S430/115
摘要： The present invention provides a copolymer which can prevent problems associated with immersion lithography (including occurrence of a pattern defect such as water mark, and variation in sensitivity or abnormal patterning due to elution of an additive such as a radiation-sensitive acid-generator) and which provides surface characteristics suitable for immersion lithography, and a composition containing the copolymer.The copolymer for immersion lithography has, at least, a repeating unit (A) that generates an alkali-soluble group by removing protecting group through action of an acid, and a repeating unit (B) having a lactone structure, wherein, when a solution of the copolymer in propylene glycol monomethyl ether acetate (hereinafter may be abbreviated as “PGMEA”) is applied to a wafer and then heated to form a thin film, and a 15-μL droplet of pure water is added onto the thin film, the inclination of the wafer at the time when the water droplet starts to move is 35° or less, or the contact angle of the top edge of the water droplet at the time when the water droplet starts to move is 64° or more.
摘要翻译： 本发明提供一种共聚物，其能够防止与浸渍光刻相关的问题（包括图案缺陷如水痕的发生，以及由于诸如辐射敏感的酸发生剂等添加剂的洗脱引起的灵敏度或异常图案的变化） 其提供适于浸渍光刻的表面特性，以及含有该共聚物的组合物。 用于浸渍光刻的共聚物至少具有通过酸的作用除去保护基而产生碱溶性基团的重复单元（A）和具有内酯结构的重复单元（B），其中当溶液 的丙二醇单甲醚乙酸酯共聚物（以下简称为“PGMEA”）施加到晶片上，然后加热形成薄膜，在薄膜上加入15μL的纯水滴， 当水滴开始移动时，晶片的倾斜度为35°以下，或水滴开始移动时的水滴顶端的接触角为64°以上。
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5.发明申请COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PRODUCING METHOD THEREOF, AND COMPOSITION 审中-公开用于半导体光刻的共聚物及其制备方法及组合物公开(公告)号：US20100324245A1
公开(公告)日：2010-12-23
申请号：US12872461
申请日：2010-08-31
CPC分类号： G03F7/0046 , G03F7/0392 , Y10S430/106 , Y10S430/111
摘要： In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided.According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.
摘要翻译： 为了提高半导体光刻工艺中的抗蚀剂图案形状，其是影响加工精度，整合度和收率的因素，用于半导体光刻的共聚物，其中含羟基的重复单元的组成低 控制分子量区域，并提供其制造方法。 根据本发明，在通过使具有羟基的单体和不具有羟基的单体共聚得到的半导体平版印刷用共聚物中，当使用含有羟基的重复单元的组成的共聚物时， 该对象可以实现。
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6.发明申请Copolymer For Semiconductor Lithography And Producing Method Thereof, And Composition 有权半导体光刻用共聚物及其制备方法及组成公开(公告)号：US20080114139A1
公开(公告)日：2008-05-15
申请号：US11587592
申请日：2005-04-28
IPC分类号： C08F28/02
CPC分类号： G03F7/0046 , G03F7/0392 , Y10S430/106 , Y10S430/111
摘要： In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided.According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.
摘要翻译： 为了提高半导体光刻工艺中的抗蚀剂图案形状，其是影响加工精度，整合度和收率的因素，用于半导体光刻的共聚物，其中含羟基的重复单元的组成低 控制分子量区域，并提供其制造方法。 根据本发明，在通过使具有羟基的单体和不具有羟基的单体共聚得到的半导体平版印刷用共聚物中，当使用含有羟基的重复单元的组成的共聚物时， 该对象可以实现。
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7.发明授权Copolymer for semiconductor lithography and producing method thereof, and composition 有权半导体光刻用共聚物及其制造方法及组成公开(公告)号：US07910282B2
公开(公告)日：2011-03-22
申请号：US11587592
申请日：2005-04-28
CPC分类号： G03F7/0046 , G03F7/0392 , Y10S430/106 , Y10S430/111
摘要： In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided.According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.
摘要翻译： 为了提高半导体光刻工艺中的抗蚀剂图案形状，其是影响加工精度，整合度和收率的因素，用于半导体光刻的共聚物，其中含羟基的重复单元的组成低 控制分子量区域，并提供其制造方法。 根据本发明，在通过使具有羟基的单体和不具有羟基的单体共聚得到的半导体平版印刷用共聚物中，当使用含有羟基的重复单元的组成的共聚物时， 该对象可以实现。
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