公开(公告)号：US20130168599A1

公开(公告)日：2013-07-04

申请号：US13814593

申请日：2011-07-19

申请人： Tomohiko Kato ,  Atsushi Sano ,  Masaki Sobu ,  Akinobu Nojima ,  Yasunaga Kagaya

发明人： Tomohiko Kato ,  Atsushi Sano ,  Masaki Sobu ,  Akinobu Nojima ,  Yasunaga Kagaya

IPC分类号： H01M4/1315

CPC分类号： H01M4/1315 ,  C01G45/1228 ,  C01G51/50 ,  C01G53/50 ,  C01P2002/50 ,  C01P2002/72 ,  C01P2002/88 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2006/12 ,  C01P2006/40 ,  H01M4/0471 ,  H01M4/13915 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525

摘要： Active material is obtained by sintering a precursor, has a layered structure and is represented by the following formula (1). The temperature at which the precursor becomes a layered structure compound in its sintering in atmospheric air is 450° C. or less. Alternatively, the endothermic peak temperature of the precursor when its temperature is increased from 300° C. to 800° C. in its differential thermal analysis in the atmospheric air is 550° C. or less. LiyNiaCobMncMdOxFz  (1) In formula (1), the element M is at least one of Al, Si, Zr, Ti, Fe, Mg, Nb, Ba, and V and 1.9≦(a+b+c+d+y)≦2.1, 1.0≦y≦1.3, 0

摘要翻译： 通过烧结前体获得活性物质，具有层状结构并由下式（1）表示。 在大气中烧结时，前体成为层状结构化合物的温度为450℃以下。 或者，当前体在大气中的差热分析中其温度从300℃升高至800℃时，其吸热峰温度为550℃以下。 LiyNiaCobMncMdOxFz（1）在式（1）中，元素M为Al，Si，Zr，Ti，Fe，Mg，Nb，Ba和V中的至少一种，1.9（a + b + c + d + y） @ 2.1，1.0 @ y @ 1.3,0

公开(公告)号：US20130209871A1

公开(公告)日：2013-08-15

申请号：US13814638

申请日：2011-07-21

申请人： Tomohiko Kato ,  Atsushi Sano ,  Masaki Sobu ,  Akinobu Nojima

发明人： Tomohiko Kato ,  Atsushi Sano ,  Masaki Sobu ,  Akinobu Nojima

IPC分类号： H01M4/66

CPC分类号： H01M4/667 ,  C01G45/1228 ,  C01G51/50 ,  C01G53/50 ,  C01P2002/52 ,  C01P2006/12 ,  C01P2006/40 ,  H01M4/505 ,  H01M4/525 ,  H01M10/0525 ,  H01M10/0568 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011

摘要： An active material having high capacity and excellent charging/discharging cycle durability at high potential is provided. The active material has a layered structure and is represented by the following composition formula (1): LiyNiaCobMncMdOxFz1Pz2   (1) wherein the element M is at least one element selected from the group consisting of Al, Si, Zr, Ti, Fe, Mg, Nb, Ba and V, and 1.9≦(a+b+c+d+y)≦2.1, 1.0≦y≦1.3, 0

摘要翻译： 提供了具有高容量和高电位优良充电/放电循环耐久性的活性材料。 活性材料具有层状结构，并由以下组成式（1）表示：LiyNiaCobMncMdOxFz1Pz2（1）其中元素M为选自Al，Si，Zr，Ti，Fe，Mg， Nb，Ba和V和1.9 @（a + b + c + d + y）@ 2.1,1.0 @ y @ 1.3,0

公开(公告)号：US09093712B2

公开(公告)日：2015-07-28

申请号：US13814638

申请日：2011-07-21

申请人： Tomohiko Kato ,  Atsushi Sano ,  Masaki Sobu ,  Akinobu Nojima

发明人： Tomohiko Kato ,  Atsushi Sano ,  Masaki Sobu ,  Akinobu Nojima

IPC分类号： H01M4/1315 ,  H01M4/131 ,  H01M4/139 ,  H01M4/13915 ,  H01M4/1391 ,  H01M4/66 ,  C01G45/12 ,  C01G51/00 ,  C01G53/00 ,  H01M4/505 ,  H01M4/525 ,  H01M10/0525 ,  H01M10/0568

CPC分类号： H01M4/667 ,  C01G45/1228 ,  C01G51/50 ,  C01G53/50 ,  C01P2002/52 ,  C01P2006/12 ,  C01P2006/40 ,  H01M4/505 ,  H01M4/525 ,  H01M10/0525 ,  H01M10/0568 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011

摘要： An active material having high capacity and excellent charging/discharging cycle durability at high potential is provided. The active material has a layered structure and is represented by the following composition formula (1): LiyNiaCobMncMdOxFz1Pz2  (1) wherein the element M is at least one element selected from the group consisting of Al, Si, Zr, Ti, Fe, Mg, Nb, Ba and V, and 1.9≦(a+b+c+d+y)≦2.1, 1.0≦y≦1.3, 0

摘要翻译： 提供了具有高容量和高电位优良充电/放电循环耐久性的活性材料。 活性材料具有层状结构，并由以下组成式（1）表示：LiyNiaCobMncMdOxFz1Pz2（1）其中元素M为选自Al，Si，Zr，Ti，Fe，Mg， Nb，Ba和V以及1.9和nlE;（a + b + c + d + y）＆nlE; 2.1,1.0＆nlE; y＆nlE; 1.3,0

公开(公告)号：US20050200234A1

公开(公告)日：2005-09-15

申请号：US11071303

申请日：2005-03-04

申请人： Masaki Sobu ,  Katsunori Osanai

发明人： Masaki Sobu ,  Katsunori Osanai

IPC分类号： H01L41/09 ,  H01L41/18 ,  H01L41/22 ,  H01L41/29 ,  H01L41/39 ,  H01L41/41 ,  H03H3/08 ,  H03H9/02 ,  H03H9/10 ,  H03H9/145 ,  H03H9/25 ,  H03H9/72

CPC分类号： H03H9/72 ,  H03H3/08 ,  H03H9/02921 ,  H03H9/02984 ,  H03H9/02992 ,  H03H9/0576 ,  H03H9/1071 ,  H03H9/725

摘要： A surface acoustic wave element, a surface acoustic wave device, a duplexer, and a method of making a surface acoustic wave element which significantly restrain characteristics from deteriorating are provided. The surface acoustic wave element in accordance with the present invention comprises a piezoelectric substrate, and an IDT electrode formed on the piezoelectric substrate, whereas the piezoelectric substrate has a volume resistivity of not less than 3.6×1010 Ω·cm and not more than 1.5×1014 Ω·cm. This surface acoustic wave element comprises the piezoelectric substrate having a low volume resistivity, whereas the volume resistivity is reduced to 1.5×1014 Ω·cm or less. Therefore, discharging is restrained from occurring between IDT electrodes, whereby characteristics are significantly kept from deteriorating. Also, since the volume resistivity of the piezoelectric substrate is not less than 3.6×1010 Ω·cm, the IDT electrodes are significantly prevented from short-circuiting with each other.

摘要翻译： 提供表面声波元件，表面声波器件，双工器，以及制造表现声波元件的方法，该表面声波元件显着地抑制特性劣化。 根据本发明的表面声波元件包括压电基板和形成在压电基板上的IDT电极，而压电基板的体积电阻率不小于3.6×10 10Ω。 cm，不大于1.5×10 14Ω·cm。 该表面声波元件包括具有低体积电阻率的压电基片，而体积电阻率降低到1.5×10 14Ω或更小。 因此，能够抑制IDT电极之间的放电，从而显着地防止特性恶化。 此外，由于压电基板的体积电阻率不小于3.6×10 10Ωcm，所以可以显着地防止IDT电极彼此短路。

公开(公告)号：US20080310279A1

公开(公告)日：2008-12-18

申请号：US12155972

申请日：2008-06-12

申请人： Hiroshi Shingai ,  Hideki Hirata ,  Tatsuya Kato ,  Hiroshi Takasaki ,  Yasuhiro Takagi ,  Masaki Sobu ,  Masanori Kosuda

发明人： Hiroshi Shingai ,  Hideki Hirata ,  Tatsuya Kato ,  Hiroshi Takasaki ,  Yasuhiro Takagi ,  Masaki Sobu ,  Masanori Kosuda

IPC分类号： G11B3/74 ,  G11B7/00

CPC分类号： G11B7/24 ,  G11B7/24038 ,  G11B7/259 ,  G11B2007/24308 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B2007/25706 ,  G11B2007/25715

摘要： A rewritable phase-change optical recording medium is provided, which includes a substrate, a first information layer, a spacer layer, a second information layer, and a cover layer. The second information layer includes a recording film containing Sb as a main component and V or V and In as second components. When an amorphous mark formed in the recording film is irradiated with a reproduction beam, crystallization of the amorphous mark occurs only in a central portion in the width direction of the amorphous mark. The width direction is orthogonal to the scanning direction of the laser beam. The recording film is formed of a material that exhibits a change in degree of modulation of 5% or less when recorded information is repeatedly reproduced. The change in degree of modulation is a change from when the number of times of reproduction is 100,000 to when it is 400,000.

摘要翻译： 提供了一种可重写的相变光学记录介质，其包括基板，第一信息层，间隔层，第二信息层和覆盖层。 第二信息层包括含有Sb作为主要成分的记录膜，V或V和In作为第二成分。 当在再现光束照射记录膜中形成的非晶标记时，仅在无定形标记的宽度方向的中心部分发生非晶标记的结晶。 宽度方向与激光束的扫描方向正交。 当记录信息被重复再现时，记录膜由表现出5％以下的调制度变化的材料形成。 调制度的变化是从复制次数为100,000到40万的时间的变化。

公开(公告)号：US07411333B2

公开(公告)日：2008-08-12

申请号：US11457960

申请日：2006-07-17

申请人： Yoshikazu Kihara ,  Katsunori Osanai ,  Yukio Hirokawa ,  Masaki Sobu

发明人： Yoshikazu Kihara ,  Katsunori Osanai ,  Yukio Hirokawa ,  Masaki Sobu

IPC分类号： H03H9/145 ,  H03H9/25 ,  H01L41/047

CPC分类号： H03H9/02559 ,  H03H9/02921

摘要： A SAW device comprises a single crystal piezo-electric strate (made, for example, of LiTaO3 or LiNbO3), and an interdigital transducer (IDT) formed of a material mainly containing Al and disposed on the piezo-electric substrate. The piezo-electric strate contains an additive (for example, Fe, Mn, Cu, Ti), and an orientation rotated by an angle in a range of 42° to 48° (more preferably 46°±0.3°) from a Y-axis toward a Z-axis about an X-axis. The IDT presents a normalized thickness h/λ (h: thickness of electrode, and λ: spacing between digits of the IDT) of 7% to 11%. A more appropriate substrate cut angle can be shown for the SAW device which employs a piezo-electric substrate containing an additive, to improve the electric characteristics thereof.

摘要翻译： SAW器件包括单晶压电栅（例如由LiTaO 3 N 3或LiNbO 3 3制成）和由材料形成的叉指式换能器（IDT） 主要含有Al并设置在压电基板上。 压电石英片含有添加剂（例如Fe，Mn，Cu，Ti），与Y方向旋转角度在42°〜48°（更优选46°±0.3°）的范围内的取向， 轴绕Z轴绕X轴。 IDT呈现7％至11％的标准化厚度h /λ（h：电极厚度和λ：IDT的位数之间的间距）。 对于采用含有添加剂的压电基板的SAW器件，可以示出更合适的衬底切割角度，以改善其电特性。

公开(公告)号：US20050012435A1

公开(公告)日：2005-01-20

申请号：US10889043

申请日：2004-07-13

申请人： Masahiro Nakano ,  Masaki Sobu ,  Shigeki Ohtsuka ,  Yasunaga Kagaya

发明人： Masahiro Nakano ,  Masaki Sobu ,  Shigeki Ohtsuka ,  Yasunaga Kagaya

IPC分类号： H03H9/145 ,  H03H3/08 ,  H03H9/02 ,  H03H9/10 ,  H03H9/64 ,  H03H9/72 ,  H01L41/047

CPC分类号： H03H9/02929 ,  H01L2224/16225 ,  H01L2924/16195 ,  H03H3/08 ,  H03H9/02984 ,  H03H9/02992 ,  H03H9/0576 ,  H03H9/059 ,  H03H9/1071 ,  H03H9/72 ,  H03H9/725

摘要： A surface acoustic wave element includes a thin film electrode composed of monocrystal aluminum disposed on a piezoelectric substrate. At least one metal of Cu, Ta, W, and Ti is segregated in the thin film electrode composed of monocrystal aluminum. In this surface acoustic wave element, segregation of Cu or the like occurs in the thin film electrode. Such segregation is effective to reduce the occurrence of cracks on the piezoelectric substrate during ultrasonic wave connection for flip chip mounting. That is, because the occurrence of cracks on the piezoelectric substrate is reduced, tolerance against the ultrasonic vibration is advantageously improved in the surface acoustic wave element.

摘要翻译： 表面声波元件包括由设置在压电基板上的单晶铝构成的薄膜电极。 Cu，Ta，W和Ti中的至少一种金属在由单晶铝构成的薄膜电极中分离。 在该表面声波元件中，在薄膜电极中发生Cu等的偏析。 这种偏析对于减少用于倒装芯片安装的超声波连接期间压电基板上的裂纹的发生是有效的。 也就是说，由于压电基板上出现裂缝，所以在弹性表面波元件中有利地提高了对超声波振动的耐受性。

公开(公告)号：US07504759B2

公开(公告)日：2009-03-17

申请号：US11071303

申请日：2005-03-04

申请人： Masaki Sobu ,  Katsunori Osanai

发明人： Masaki Sobu ,  Katsunori Osanai

IPC分类号： H01L41/08

CPC分类号： H03H9/72 ,  H03H3/08 ,  H03H9/02921 ,  H03H9/02984 ,  H03H9/02992 ,  H03H9/0576 ,  H03H9/1071 ,  H03H9/725

摘要： A surface acoustic wave element, a surface acoustic wave device, a duplexer, and a method of making a surface acoustic wave element which significantly restrain characteristics from deteriorating are provided. The surface acoustic wave element in accordance with the present invention comprises a piezoelectric substrate, and an IDT electrode formed on the piezoelectric substrate, whereas the piezoelectric substrate has a volume resistivity of not less than 3.6×1010 Ω·cm and not more than 1.5×1014 Ω·cm. This surface acoustic wave element comprises the piezoelectric substrate having a low volume resistivity, whereas the volume resistivity is reduced to 1.5×1014 Ω·cm or less. Therefore, discharging is restrained from occurring between IDT electrodes, whereby characteristics are significantly kept from deteriorating. Also, since the volume resistivity of the piezoelectric substrate is not less than 3.6×1010 Ω·cm, the IDT electrodes are significantly prevented from short-circuiting with each other.

摘要翻译： 提供表面声波元件，表面声波器件，双工器，以及制造表现声波元件的方法，该表面声波元件显着地抑制特性劣化。 根据本发明的表面声波元件包括压电基板和形成在压电基板上的IDT电极，而压电基板的体积电阻率不小于3.6×10 10Ω·cm且不大于1.5×10 14Ω 。厘米。 该表面声波元件包括具有低体积电阻率的压电基片，而体积电阻率降低到1.5×10 14Ω·cm或更小。 因此，能够抑制IDT电极之间的放电，从而显着地防止特性恶化。 此外，由于压电基板的体积电阻率不小于3.6×10 10Ω·cm，所以可以显着地防止IDT电极彼此短路。

公开(公告)号：US07760615B2

公开(公告)日：2010-07-20

申请号：US12155972

申请日：2008-06-12

申请人： Hiroshi Shinngai ,  Hideki Hirata ,  Tatsuya Kato ,  Hiroshi Takasaki ,  Yasuhiro Takagi ,  Masaki Sobu ,  Masanori Kosuda

发明人： Hiroshi Shinngai ,  Hideki Hirata ,  Tatsuya Kato ,  Hiroshi Takasaki ,  Yasuhiro Takagi ,  Masaki Sobu ,  Masanori Kosuda

IPC分类号： G11B7/24

CPC分类号： G11B7/24 ,  G11B7/24038 ,  G11B7/259 ,  G11B2007/24308 ,  G11B2007/24312 ,  G11B2007/24314 ,  G11B2007/24316 ,  G11B2007/25706 ,  G11B2007/25715

摘要： A rewritable phase-change optical recording medium is provided, which includes a substrate, a first information layer, a spacer layer, a second information layer, and a cover layer. The second information layer includes a recording film containing Sb as a main component and V or V and In as second components. When an amorphous mark formed in the recording film is irradiated with a reproduction beam, crystallization of the amorphous mark occurs only in a central portion in the width direction of the amorphous mark. The width direction is orthogonal to the scanning direction of the laser beam. The recording film is formed of a material that exhibits a change in degree of modulation of 5% or less when recorded information is repeatedly reproduced. The change in degree of modulation is a change from when the number of times of reproduction is 100,000 to when it is 400,000.

摘要翻译： 提供了一种可重写的相变光学记录介质，其包括基板，第一信息层，间隔层，第二信息层和覆盖层。 第二信息层包括含有Sb作为主要成分的记录膜，V或V和In作为第二成分。 当在再现光束照射记录膜中形成的非晶标记时，仅在无定形标记的宽度方向的中心部分发生非晶标记的结晶。 宽度方向与激光束的扫描方向正交。 当记录信息被重复再现时，记录膜由表现出5％以下的调制度变化的材料形成。 调制度的变化是从复制次数为100,000到40万的时间的变化。

公开(公告)号：US07352114B2

公开(公告)日：2008-04-01

申请号：US10889043

申请日：2004-07-13

申请人： Masahiro Nakano ,  Masaki Sobu ,  Shigeki Ohtsuka ,  Yasunaga Kagaya

发明人： Masahiro Nakano ,  Masaki Sobu ,  Shigeki Ohtsuka ,  Yasunaga Kagaya

IPC分类号： H01L41/047 ,  H01L41/04 ,  H03H9/125

CPC分类号： H03H9/02929 ,  H01L2224/16225 ,  H01L2924/16195 ,  H03H3/08 ,  H03H9/02984 ,  H03H9/02992 ,  H03H9/0576 ,  H03H9/059 ,  H03H9/1071 ,  H03H9/72 ,  H03H9/725

摘要： A surface acoustic wave element includes a thin film electrode composed of monocrystal aluminum disposed on a piezoelectric substrate. At least one metal of Cu, Ta, W, and Ti is segregated in the thin film electrode composed of monocrystal aluminum. In this surface acoustic wave element, segregation of Cu or the like occurs in the thin film electrode. Such segregation is effective to reduce the occurrence of cracks on the piezoelectric substrate during ultrasonic wave connection for flip chip mounting. That is, because the occurrence of cracks on the piezoelectric substrate is reduced, tolerance against the ultrasonic vibration is advantageously improved in the surface acoustic wave element.

摘要翻译： 表面声波元件包括由设置在压电基板上的单晶铝构成的薄膜电极。 Cu，Ta，W和Ti中的至少一种金属在由单晶铝构成的薄膜电极中分离。 在该表面声波元件中，在薄膜电极中发生Cu等的偏析。 这种偏析对于减少用于倒装芯片安装的超声波连接期间压电基板上的裂纹的发生是有效的。 也就是说，由于压电基板上出现裂缝，所以在弹性表面波元件中有利地提高了对超声波振动的耐受性。